Removal of etching/ashing residues and ashing/wet-clean damage in porous silica low- k films von Yamanishi, T., Ono, T., Kohmura, K., Fujii, N., Nakayama, T., Tanaka, H., Chikaki, S., Kikkawa, T.

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Combined use of fluorescence with a magnetic tracer and dilution effect upon sentinel node localization in a murine model von Kuwahata, Akihiro, Ahmed, Muneer, Saeki, Kohei, Chikaki, Shinichi, Kaneko, Miki, Qiu, Wenqi, Xin, Zonghao, Yamaguchi, Shinji, Kaneko, Akiko, Douek, Michael, Kusakabe, Moriaki, Sekino, Masaki

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A new cobalt salicide technology for 0.15-μm CMOS devices von Inoue, K, Mikagi, K, Abiko, H, Chikaki, S, Kikkawa, T

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Growth of TiSi2 from codeposited TiSix layers and interfacial layers von Tung, R. T., Fujii, K., Kikuta, K., Chikaki, S., Kikkawa, T.

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Total Performance of 32-nm-Node Ultralow- k /Cu Dual-Damascene Interconnects Featuring Short-TAT Silylated Porous Silica (k = \hbox) von Oda, N, Chikaki, S, Kubota, T, Nakao, S, Tomioka, K, Soda, E, Nakamura, N, Gawase, A, Nogawa, J, Kawashima, Y, Hayashi, R, Suzuki, T, Saito, S

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Control of process-induced damages in self-assembled porous silica/Cu damascene interconnects for 45nm node and beyond von Yagi, R., Chikaki, S., Shimoyama, M., Yoshino, T., Ono, T., Ishikawa, A., Fujii, N., Hata, N., Nakayama, T., Kohmura, K., Tanaka, H., Goto, T., Kawahara, J., Sonoda, Y., Matsuo, H., Seino, Y., Kinoshita, K., Kikkawa, T.

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High controllability and low cost APM process by one-bath type wet-bench for multi gate oxide pre-cleaning von Suzuki, T., Kunishima, H., Wake, T., Chikaki, S.

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Extraction of process-induced damage in low-k/Cu damascene structure von Chikaki, S., Shimoyama, M., Yagi, R., Yoshino, T., Shishida, Y., Ono, T., Ishikawa, A., Fujii, N., Nakayama, T., Kohmura, K., Tanaka, H., Kawahara, J., Matsuo, H., Takada, S., Yamanishi, T., Hishiya, S., Hata, N., Kinoshita, K., Kikkawa, T.

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Electrical reliabilities of porous silica low-k films von Kikkawa, T, Kayaba, Y, Kohmura, K, Chikaki, S

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Feasibility study of 70nm pitch Cu/porous low-k D/D integration featuring EUV lithography toward 22nm generation von Nakamura, N., Oda, N., Soda, E., Hosoi, N., Gawase, A., Aoyama, H., Tanaka, Y., Kawamura, D., Chikaki, S., Shiohara, M., Tarumi, N., Kondo, S., Mori, I., Saito, S.

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A new cobalt salicide technology for 0.15-/spl mu/m CMOS devices von Inoue, K., Mikagi, K., Abiko, H., Chikaki, S., Kikkawa, T.

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Ammonium-salt-added silica slurry for the chemical mechanical polishing of the interlayer dielectric film planarization in ULSI's von HAYASHI, Y, SAKURAI, M, NAKAJIMA, T, HAYASHI, K, SASAKI, S, SHIN-ICHI CHIKAKI, KUNIO, T

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Relationship between reorientational motions of a photochromic dopant and local relaxation processes of a glassy polymer matrix von Tran-Cong, Qui, Chikaki, Shinya, Kanato, Hirotaka

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Hybrid low-k/Cu dual damascene process for 45-32 nm technology node using self-assembled porous-silica ultra low-k films von Chikaki, S., Shimoyama, A., Yagi, R., Yoshino, T., Ono, T., Ishikawa, A., Fujii, N., Hata, N., Nakayama, T., Kohmura, K., Tanaka, H., Goto, T., Kawahara, J., Sonoda, Y., Matsuo, H., Seino, Y., Takada, S., Kunimi, N., Uchida, Y., Hishiya, S., Shishida, Y., Kinoshita, K., Kikkawa, T.

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A novel TiN/Ti contact plug technology for gigabit scale DRAM using Ti-PECVD and TiN-LPCVD von Ohto, K., Urabe, K., Taguwa, T., Chikaki, S., Kikkawa, T.

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A thermally stable Ti-W salicide for deep-submicron logic with embedded DRAM von Fujii, K., Kikuta, K., Inoue, K., Mikagi, K., Chikaki, S., Kikkawa, T.

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Barrier metal free copper damascene interconnection technology using atmospheric copper reflow and nitrogen doping in SiOF film von Mikagi, K., Ishikawa, H., Usami, T., Suzuki, M., Inoue, K., Oda, N., Chikaki, S., Sakai, I., Kikkawa, T.

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Extremely slow reorientation dynamics of molecular tracers in glassy polymers von Tran-Cong, Qui, Kanato, Hirotaka, Chikaki, Shinya

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Packaging characteristics of 6-layer ultra low-k/Cu dual damascene interconnect featuring advanced scalable porous silica (k=2.1) von Chikaki, S., Soda, E., Gawase, A., Suzuki, T., Kawashima, Y., Oda, N., Saito, S.

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Analytical Study of leakage characteristics change during multilevel interconnect process using porogen-type porous SiOC (k=2.4)/Cu system von Ohashi, N., Nakahira, J., Soda, E., Tomioka, K., Chikaki, S., Oda, N., Kondo, S., Saito, S.

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