InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications von Chang, Edward-Yi, Kuo, Chien-I, Hsu, Heng-Tung, Chiang, Che-Yang, Miyamoto, Yasuyuki

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Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions von Zeng, Yuping, Kuo, Chien-I, Kapadia, Rehan, Hsu, Ching-Yi, Javey, Ali, Hu, Chenming

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Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support von Yuping Zeng, Chien-I Kuo, Chingyi Hsu, Najmzadeh, Mohammad, Sachid, Angada, Kapadia, Rehan, Chunwing Yeung, Chang, Edward, Chenming Hu, Javey, Ali

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Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications von Sahoo, Kartika Chandra, Chien-I Kuo, Yiming Li, Chang, Edward Yi

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30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs von Chia-Ta Chang, Heng-Tung Hsu, Chang, E.Y., Chien-I Kuo, Jui-Chien Huang, Chung-Yu Lu, Miyamoto, Y.

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Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications von Chia-Yuan Chang, Heng-Tung Hsu, Chang, E.Y., Chien-I Kuo, Datta, S., Radosavljevic, M., Miyamoto, Y., Guo-Wei Huang

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Investigation of Characteristics of Al2O3/n-In x Ga1−x As (x = 0.53, 0.7, and 1) Metal–Oxide–Semiconductor Structures von Trinh, Hai-Dang, Lin, Yueh-Chin, Kuo, Chien-I, Chang, Edward Yi, Nguyen, Hong-Quan, Wong, Yuen-Yee, Yu, Chih-Chieh, Chen, Chi-Ming, Chang, Chia-Yuan, Wu, Jyun-Yi, Chiu, Han-Chin, Yu, Terrence, Chang, Hui-Cheng, Tsai, Joseph, Hwang, David

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Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching von Yu, Chia-Hui, Hsu, Heng-Tung, Chiang, Che-Yang, Kuo, Chien-I, Miyamoto, Yasuyuki, Chang, Edward Yi

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Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate von Wang, Chin-Te, Kuo, Chien-I, Hsu, Heng-Tung, Chang, Edward Yi, Hsu, Li-Han, Lim, Wee-Chin, Miyamoto, Yasuyuki

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InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application von Kuo, Chien-I, Hsu, Heng-Tung, Chang, Edward Yi, Miyamoto, Yasuyuki, Tsern, Wen-Chung

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Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations von Tang, Shih-Hsuan, Kuo, Chien-I, Trinh, Hai-Dang, Yi Chang, Edward, Nguyen, Hong-Quan, Nguyen, Chi-Lang, Luo, Guang-Li

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Improvement on the noise performance of InAs-based HEMTs with gate sinking technology von Hsu, Heng-Tung, Kuo, Chien-I, Chang, Edward Y., Kuo, Fang-Yao

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C–V characteristics of epitaxial germanium metal–oxide–semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric von Tang, Shih Hsuan, Kuo, Chien I., Trinh, Hai Dang, Hudait, Mantu, Chang, Edward Yi, Hsu, Ching Yi, Su, Yung Hsuan, Luo, Guang-Li, Nguyen, Hong Quan

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Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz von Fatah, Faiz, Kuo, Chien-I, Hsu, Heng-Tung, Chiang, Che-Yang, Hsu, Ching-Yi, Miyamoto, Yasuyuki, Chang, Edward Yi

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RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (\hbox\hbox\hbox)/(\hbox) Superlattice-Channel Structure for Millimeter-Wave Applications von Chien-I Kuo, Heng-Tung Hsu, Yu-Lin Chen, Chien-Ying Wu, Chang, Edward Yi, Miyamoto, Yasuyuki, Wen-Chung Tsern, Sahoo, Kartik Chandra

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Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology von Kuo, Chien-I, Hsu, Heng-Tung, Wu, Chien-Ying, Chang, Edward Y., Chen, Yu-Lin, Lim, Wee-Chin

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Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates von Hsiao, Yu-Lin, Lu, Lung-Chi, Wu, Chia-Hsun, Chang, Edward Yi, Kuo, Chien-I, Maa, Jer-Shen, Lin, Kung-Liang, Luong, Tien-Tung, Huang, Wei-Ching, Chang, Chia-Hua, Dee, Chang Fu, Majlis, Burhanuddin Yeop

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Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching von Kuo, Chien-I, Hsu, Heng-Tung, Hsu, Ching-Yi, Yu, Chia-Hui, Ho, Han-Chieh, Chang, Edward Yi, Chyi, Jen-Inn

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Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl 3 Dry Etching von Kuo, Chien-I, Hsu, Heng-Tung, Hsu, Ching-Yi, Yu, Chia-Hui, Ho, Han-Chieh, Chang, Edward Yi, Chyi, Jen-Inn

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RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using ( hbox In x hbox Ga 1 - x hbox As ) m / ( hbox InAs ) n Superlattice-Channel Structure for Millime... von Kuo, Chien-I, Hsu, Heng-Tung, Chen, Yu-Lin, Wu, Chien-Ying, Chang, Edward Yi, Miyamoto, Yasuyuki, Tsern, Wen-Chung, Sahoo, Kartik Chandra

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