Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams von Uedono, Akira, Shojiki, Kanako, Uesugi, Kenjiro, Chichibu, Shigefusa F., Ishibashi, Shoji, Dickmann, Marcel, Egger, Werner, Hugenschmidt, Christoph, Miyake, Hideto

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Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam von Uedono, Akira, Sakurai, Hideki, Narita, Tetsuo, Sierakowski, Kacper, Bockowski, Michal, Suda, Jun, Ishibashi, Shoji, Chichibu, Shigefusa F., Kachi, Tetsu

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Defect‐Resistant Radiative Performance of m‐Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep‐Ultraviolet and Visible Polarized Light Emitters von Chichibu, Shigefusa F., Kojima, Kazunobu, Uedono, Akira, Sato, Yoshitaka

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Experimental determination of band offsets of NiO-based thin film heterojunctions von Kawade, Daisuke, Chichibu, Shigefusa F., Sugiyama, Mutsumi

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Nearly temperature-independent ultraviolet light emission intensity of indirect excitons in hexagonal BN microcrystals von Chichibu, Shigefusa F., Ishikawa, Youichi, Kominami, Hiroko, Hara, Kazuhiko

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Hole capture-coefficient of intrinsic nonradiative recombination centers that commonly exist in bulk, epitaxial, and proton-irradiated ZnO von Chichibu, Shigefusa F., Uedono, Akira, Kojima, Kazunobu, Koike, Kazuto, Yano, Mitsuaki, Gonda, Shun-ichi, Ishibashi, Shoji

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Self-formed compositional superlattices triggered by cation orderings in m-plane Al1−xInxN on GaN von Chichibu, Shigefusa F., Shima, Kohei, Kojima, Kazunobu, Kangawa, Yoshihiro

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Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams von Uedono, Akira, Takashima, Shinya, Edo, Masaharu, Ueno, Katsunori, Matsuyama, Hideaki, Egger, Werner, Koschine, Tönjes, Hugenschmidt, Christoph, Dickmann, Marcel, Kojima, Kazunobu, Chichibu, Shigefusa F., Ishibashi, Shoji

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Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride von Shima, Kohei, Cheng, Tin S., Mellor, Christopher J., Beton, Peter H., Elias, Christine, Valvin, Pierre, Gil, Bernard, Cassabois, Guillaume, Novikov, Sergei V., Chichibu, Shigefusa F.

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Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation von Uedono, Akira, Sakurai, Hideki, Uzuhashi, Jun, Narita, Tetsuo, Sierakowski, Kacper, Ishibashi, Shoji, Chichibu, Shigefusa F., Bockowski, Michal, Suda, Jun, Ohkubo, Tadakatsu, Ikarashi, Nobuyuki, Hono, Kazuhiro, Kachi, Tetsu

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Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN-Transition from Dissolution Stage to Growth Stage Conditions von Schimmel, Saskia, Tomida, Daisuke, Ishiguro, Tohru, Honda, Yoshio, Chichibu, Shigefusa F, Amano, Hiroshi

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Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam von Uedono, Akira, Tanaka, Ryo, Takashima, Shinya, Ueno, Katsunori, Edo, Masaharu, Shima, Kohei, Kojima, Kazunobu, Chichibu, Shigefusa F., Ishibashi, Shoji

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Reactive RF magnetron sputtering epitaxy of NiO thin films on (0001) sapphire and (100) MgO substrates von Nishimoto, Keisuke, Shima, Kohei, Chichibu, Shigefusa F., Sugiyama, Mutsumi

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Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams von Uedono, Akira, Iguchi, Hiroko, Narita, Tetsuo, Kataoka, Keita, Egger, Werner, Koschine, Tönjes, Hugenschmidt, Christoph, Dickmann, Marcel, Shima, Kohei, Kojima, Kazunobu, Chichibu, Shigefusa F., Ishibashi, Shoji

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Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors von Chichibu, Shigefusa F, Uedono, Akira, Onuma, Takeyoshi, Haskell, Benjamin A, Chakraborty, Arpan, Koyama, Takahiro, Fini, Paul T, Keller, Stacia, DenBaars, Steven P, Speck, James S, Mishra, Umesh K, Nakamura, Shuji, Yamaguchi, Shigeo, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Han, Jung, Sota, Takayuki

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Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO von Kawasaki, Masashi, Tsukazaki, Atsushi, Ohtomo, Akira, Onuma, Takeyoshi, Ohtani, Makoto, Makino, Takayuki, Sumiya, Masatomo, Ohtani, Keita, Chichibu, Shigefusa F, Fuke, Syunrou, Segawa, Yusaburou, Ohno, Hideo, Koinuma, Hideomi

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High temperature degradation mechanism of a red phosphor, CaAlSiN3:Eu for solid-state lighting von Oishi, Masatsugu, Shiomi, Shohei, Yamamoto, Takashi, Ueki, Tomoyuki, Kai, Yoichiro, Chichibu, Shigefusa F., Takatori, Aiko, Kojima, Kazunobu

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Electrical degradation and recovery of NiO/ZnO visible-light-transparent flexible solar cells von Kim, Joonam, Kato, Naruhide, Chichibu, Shigefusa F., Sugiyama, Mutsumi

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Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature von Takahashi, Masahiro, Tanaka, Atsushi, Ando, Yuto, Watanabe, Hirotaka, Deki, Manato, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Shima, Kohei, Kojima, Kazunobu, Chichibu, Shigefusa F., Chen, Kevin J., Amano, Hiroshi

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Determination of absolute value of quantum efficiency of radiation in high quality GaN single crystals using an integrating sphere von Kojima, Kazunobu, Ohtomo, Tomomi, Ikemura, Ken-ichiro, Yamazaki, Yoshiki, Saito, Makoto, Ikeda, Hirotaka, Fujito, Kenji, Chichibu, Shigefusa F.

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