Excessive gestational weight gain and emotional eating are positively associated with postpartum depressive symptoms among taiwanese women von Wu, Chia-Hsun, Gau, Meei-Ling, Cheng, Su-Fen, Chen, Tzu-Ling, Wu, Chih-Jung

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High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications von Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu, Ting-En Hsieh, Lumbantoruan, Franky Juanda, Yu-Hsuan Ho, Jian-You Chen, Kun-Sheng Yang, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Quang Ho Luc, Yueh-Chin Lin, Chang, Edward Yi

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Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT von Lumbantoruan, Franky, Wu, Chia‐Hsun, Zheng, Xia‐Xi, Singh, Sankalp K., Dee, Chang‐Fu, Majlis, Burhanuddin Y., Chang, Edward‐Yi

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Vaginal birth after cesarean section—The world trend and local experience in Taiwan von Tsai, Hsiu-Ting, Wu, Chia-Hsun

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High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications von Yen-Ku Lin, Noda, Shuichi, Chia-Ching Huang, Hsiao-Chieh Lo, Chia-Hsun Wu, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Samukawa, Seiji, Chang, Edward Yi

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Associations of the Pre-Pregnancy Body Mass Index and Gestational Weight Gain With Pregnancy Outcomes in Taiwanese Women von Tsai, I-Hsien, Chen, Chih-Ping, Sun, Fang-Ju, Wu, Chia-Hsun, Yeh, Sung-Ling

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AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications von Yen-Ku Lin, Noda, Shuichi, Hsiao-Chieh Lo, Shih-Chien Liu, Chia-Hsun Wu, Yuen-Yee Wong, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Samukawa, Seiji, Chang, Edward Yi

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InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment von Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Yen-Ku Lin, Chia-Hsun Wu, Sze, Simon M., Chang, Edward Yi

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Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation von Wu, Chia-Hsun, Han, Ping-Cheng, Luc, Quang Ho, Hsu, Ching-Yi, Hsieh, Ting-En, Wang, Huan-Chung, Lin, Yen-Ku, Chang, Po-Chun, Lin, Yueh-Chin, Chang, Edward Yi

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Corrections to "AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications" [Nov 16 1395-1398] von Yen-Ku Lin, Noda, Shuichi, Hsiao-Chieh Lo, Shih-Chien Liu, Chia-Hsun Wu, Yuen-Yee Wong, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Samukawa, Seiji, Chang, Edward Yi

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AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants von Wang, Huan-Chung, Hsieh, Ting-En, Lin, Yueh-Chin, Luc, Quang Ho, Liu, Shih-Chien, Wu, Chia-Hsun, Dee, Chang Fu, Majlis, Burhanuddin Yeop, Chang, Edward Yi

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Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric von Hsu, Ching-Hsiang, Shih, Wang-Cheng, Lin, Yueh-Chin, Hsu, Heng-Tung, Hsu, Hisang-Hua, Huang, Yu-Xiang, Lin, Tai-Wei, Wu, Chia-Hsun, Wu, Wen-Hao, Maa, Jer-Shen, Iwai, Hiroshi, Kakushima, Kuniyuki, Chang, Edward Yi

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E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High Vth Stability by Field Plate Engineering von Wu, Jui-Sheng, Lee, Chih-Chieh, Wu, Chia-Hsun, Kao, Min-Lu, Weng, You-Chen, Yang, Chih-Yi, Luc, Quang Ho, Lee, Ching-Ting, Ueda, Daisuke, Chang, Edward Yi

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InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D von Chang, Po-Chun, Hsiao, Chih-Jen, Lumbantoruan, Franky Juanda, Wu, Chia-Hsun, Lin, Yen-Ku, Lin, Yueh-Chin, Sze, Simon M., Chang, Edward Yi

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Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switchin... von Wu, Jui-Sheng, Weng, You-Chen, Yang, Tsung-Ying, Wu, Chia-Hsun, Lee, Chih-Chieh, Iwai, Hiroshi, Chang, Edward Yi

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Prenatal diagnosis and molecular cytogenetic characterization of mosaicism for a small supernumerary marker chromosome derived from chromosome 21q11.2-q21.1 and a literature review von Chen, Chih-Ping, Chen, Ming, Wu, Chia-Hsun, Lin, Chen-Ju, Chern, Schu-Rern, Wu, Peih-Shan, Chen, Yen-Ni, Chen, Shin-Wen, Chang, Shun-Ping, Chen, Li-Feng, Wang, Wayseen

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Non-genomic immunosuppressive actions of progesterone inhibits PHA-induced alkalinization and activation in T cells von Chien, Eileen Jea, Chang, Ching-Pang, Lee, Wen-Feng, Su, Tsung-Hsien, Wu, Chia-Hsun

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Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application von Yueh Chin Lin, Yu Xiang Huang, Gung Ning Huang, Chia Hsun Wu, Jing Neng Yao, Chung Ming Chu, Shane Chang, Chia Chieh Hsu, Jin Hwa Lee, Kakushima, Kuniyuki, Tsutsui, Kazuo, Iwai, Hiroshi, Chang, Edward Yi

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Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack von Wu, Jui-Sheng, Lee, Chih-Chieh, Wu, Chia-Hsun, Huang, Cheng-Jun, Liang, Yan-Kui, Weng, You-Chen, Chang, Edward Yi

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Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications von Huang, Kuan Ning, Lin, Yueh-Chin, Lin, Jia-Ching, Hsu, Chia Chieh, Lee, Jin Hwa, Wu, Chia-Hsun, Yao, Jing Neng, Hsu, Heng-Tung, Nagarajan, Venkatesan, Kakushima, Kuniyuki, Tsutsui, Kazuo, Iwai, Hiroshi, Chien, Chao Hsin, Chang, Edward Yi

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