Comparative bioavailability of rifampicin and isoniazid in fixed-dose combinations and single-drug formulations von Hao, L-H., Guo, S-C., Liu, C-C., Zhu, H., Wang, B., Fu, L., Chen, M-T., Zhou, L., Chi, J-Y., Yang, W., Nie, W-J., Lu, Y.

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The ERK–ZEB1 pathway mediates epithelial–mesenchymal transition in pemetrexed resistant lung cancer cells with suppression by vinca alkaloids von Chiu, L-Y, Hsin, I-L, Yang, T-Y, Sung, W-W, Chi, J-Y, Chang, J T, Ko, J-L, Sheu, G-T

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Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots von Jyh-Shyang Wang, Ru-Shang Hsiao, Jenn-Fang Chen, Chu-Shou Yang, Lin, G., Chiu-Yueh Liang, Chih-Ming Lai, Hui-Yu Liu, Tung-Wei Chi, Chi, J.-Y.

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In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface von Katkov, A.V., Wang, C.C., Chi, J.Y.

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GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts von Chen, C.H., Chang, S.J., Su, Y.K., Chi, G.C., Chi, J.Y., Chang, C.A., Sheu, J.K., Chen, J.F.

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Development and evaluation of an MRE-based absorber with two individually controllable natural frequencies von Yang, J, Sun, S S, Chi, J Y, Ning, D H, Du, H, Zhang, S W, Li, W H, Mao, S X

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Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs von Yang, H P D, Hsu, I C, Lai, F I, Lin, G, Hsiao, R S, Maleev, N A, Blokhin, S A, Kuo, H C, Wang, S C, Chi, J Y

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1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE von Yu, H.C., Wang, J.S., Su, Y.K., Chang, S.J., Lai, F.I., Chang, Y.H., Kuo, H.C., Sung, C.P., Yang, H.P.D., Lin, K.F., Wang, J.M., Chi, J.Y., Hsiao, R.S., Mikhrin, S.

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MULTIBAND FOLDED LOOP ANTENNA FOR SMART PHONES von Chiu, Chien-Wen, Chang, Chih-Hao, Chi, Yu-Jen

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Strain relaxation in InAs∕InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling von Chen, J. F., Hsiao, R. S., Chen, Y. P., Wang, J. S., Chi, J. Y.

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Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers von WANG, J. S, LIN, G, CHEN, J. F, HSIAO, R. S, YANG, C. S, LAI, C. M, LIANG, C. Y, LIU, H. Y, CHEN, T. T, CHEN, Y. F, CHI, J. Y

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Quantum-dot infrared photodetectors with p-type-doped GaAs barrier Layers von Shu-Ting Chou, Cheng-Hsuan Tsai, Meng-Chyi Wu, Lin, S.-Y., Chi, J.-Y.

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Singlemode InAs quantum dot photonic crystal VCSELs von YANG, H. P. D, CHANG, Y. H, LAI, F. I, YU, H. C, HSU, Y. J, LIN, G, HSIAO, R. S, KUO, H. C, WANG, S. C, CHI, J. Y

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Wire-like characteristics in stacked InAs/GaAs quantum dot superlattices for optoelectronic devices von Chen, T T, Chen, Y F, Wang, J S, Huang, Y S, Hsiao, R S, Chen, J F, Lai, C M, Chi, J Y

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Biocontrol of Cytospora canker of poplar in north-east China with Trichoderma longibrachiatum von Yi, H.W, Chi, Y.J

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Effect of growth rate on the composition fluctuation of InGaAsN∕GaAs single quantum wells von Chen, J. F., Hsiao, R. S., Hsieh, P. C., Wang, J. S., Chi, J. Y.

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Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiency von Kovsh, A. R., Wang, J. S., Wei, L., Shiao, R. S., Chi, J. Y., Volovik, B. V., Tsatsul’nikov, A. F., Ustinov, V. M.

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Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs von Yang, H-P D, Lu, C, Hsiao, R, Chiou, C, Lee, C, Huang, C, Yu, H, Wang, C, Lin, K, Maleev, N A, Kovsh, A R, Sung, C, Lai, C, Wang, J, Chen, J, Lee, T, Chi, J Y

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The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots von Blokhin, S A, Sakharov, A V, Maleev, N A, Kulagina, M M, Shernyakov, Yu M, Novikov, I I, Gordeev, N Yu, Maximov, M V, Kuzmenkov, A G, Ustinov, V M, Ledentsov, N N, Kovsh, A R, Mikhrin, S S, Lin, G, Chi, J Y

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MBE growth of high-quality GaAsN bulk layers von Wang, J S, Kovsh, A R, Wei, L, Chi, J Y, Wu, Y T, Wang, P Y, Ustinov, V M

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