UV ozone treatment for improving contact resistance on graphene von Wei Chen, Chung, Ren, Fan, Chi, Gou-Chung, Hung, Sheng-Chun, Huang, Y. P., Kim, Jihyun, Kravchenko, Ivan I., Pearton, Stephen J.

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Nanometer scale fabrication and optical response of InGaN/GaN quantum disks von Lai, Yi-Chun, Higo, Akio, Kiba, Takayuki, Thomas, Cedric, Chen, Shula, Lee, Chang Yong, Tanikawa, Tomoyuki, Kuboya, Shigeyuki, Katayama, Ryuji, Shojiki, Kanako, Takayama, Junichi, Yamashita, Ichiro, Murayama, Akihiro, Chi, Gou-Chung, Yu, Peichen, Samukawa, Seiji

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Efficiency Enhancement of Organic/GaAs Hybrid Photovoltaic Cells Using Transparent Graphene as Front Electrode von Huang, Chi-Hsien, Yu, Shu-Chen, Lai, Yi-Chun, Chi, Gou-Chung, Yu, Peichen

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Electroluminescence from ZnO nanowire/polymer composite p - n junction von Chang, Chih-Yang, Tsao, Fu-Chun, Pan, Ching-Jen, Chi, Gou-Chung, Wang, Hung-Ta, Chen, Jau-Juin, Ren, F., Norton, D. P., Pearton, S. J., Chen, Kuei-Hsien, Chen, Li-Chyong

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Local anodic oxidation kinetics of chemical vapor deposition graphene supported on a thin oxide buffered silicon template von Chuang, Min-Chiang, Chien, Hsiao-Mei, Chain, Yuan-Hong, Chi, Gou-Chung, Lee, Sheng-Wei, Woon, Wei Yen

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Electrical transport properties of single GaN and InN nanowires von Chang, Chih-Yang, Chi, Gou-Chung, Wang, Wei-Ming, Chen, Li-Chyong, Chen, Kuei-Hsien, Ren, F., Pearton, S. J.

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Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer von Tun, Chun-Ju, Sheu, Jinn-Kong, Pong, Bao-Jen, Lee, Min-Lum, Lee, Ming-Yu, Hsieh, Cheng-Kang, Hu, Ching-Chung, Chi, Gou-Chung

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Investigation and Comparison of the GaN-Based Light-Emitting Diodes Grown on High Aspect Ratio Nano-Cone and General Micro-Cone Patterned Sapphire Substrate von Jhih-Kai Huang, Da-Wei Lin, Min-Hsiung Shih, Kang-Yuan Lee, Jyun-Rong Chen, Hung-Weng Huang, Shou-Yi Kuo, Chung-Hsiang Lin, Po-Tsung Lee, Gou-Chung Chi, Hao-Chung Kuo

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Natural substrate lift-off technique for vertical light-emitting diodes von Lee, Chia-Yu, Lan, Yu-Pin, Tu, Po-Min, Hsu, Shih-Chieh, Lin, Chien-Chung, Kuo, Hao-Chung, Chi, Gou-Chung, Chang, Chun-Yen

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Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates von Ching-Hsueh Chiu, Lung-Hsing Hsu, Chia-Yu Lee, Chien-Chung Lin, Bo-Wen Lin, Shang-Ju Tu, Yan-Hao Chen, Che-Yu Liu, Wen-Ching Hsu, Yu-Pin Lan, Jinn-Kong Sheu, Tien-Chang Lu, Gou-Chung Chi, Hao-Chung Kuo, Shing-Chung Wang, Chun-Yen Chang

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Chemical vapor deposition growth of bilayer graphene via altering gas flux geometry von Petrov, Stefan, Rafailov, Peter M., Marinova, Vera, Lin, Shiuan-Huei, Lai, Yi-Chun, Yu, Peichen, Chi, Gou-Chung, Dimitrov, Dimitre Z., Karashanova, Daniela, Gospodinov, Marin

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Fabrication of Flexible White Light-Emitting Diodes from Photoluminescent Polymer Materials with Excellent Color Quality von Lin, Huang-Yu, Sher, Chin-Wei, Lin, Chih-Hao, Tu, Hsien-Hao, Chen, Xin Yin, Lai, Yi-Chun, Lin, Chien-Chung, Chen, Huang-Ming, Yu, Peichen, Meng, Hsin-Fei, Chi, Gou-Chung, Honjo, Keiji, Chen, Teng-Ming, Kuo, Hao-Chung

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Efficient hybrid white light-emitting diodes by organic-inorganic materials at different CCT from 3000K to 9000K von Chen, Kuo-Ju, Lai, Yi-Chun, Lin, Bin-Cheng, Lin, Chien-Chung, Chiu, Sheng-Huan, Tu, Zong-Yi, Shih, Min-Hsiung, Yu, Peichen, Lee, Po-Tsung, Li, Xiuling, Meng, Hsin-Fei, Chi, Gou-Chung, Chen, Teng-Ming, Kuo, Hao-Chung

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Improvement of emission uniformity by using micro-cone patterned PDMS film von Liu, Che-Yu, Chen, Kuo-Ju, Lin, Da-Wei, Lee, Chia-Yu, Lin, Chien-Chung, Chien, Shih-Hsuan, Shih, Min-Hsiung, Chi, Gou-Chung, Chang, Chun-Yen, Kuo, Hao-Chung

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Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers von Uen, Wu-Yih, Li, Zhen-Yu, Huang, Yen-Chin, Chen, Meng-Chu, Yang, Tsun-Neng, Lan, Shan-Ming, Wu, Chih-Hung, Hong, Hwe-Fen, Chi, Gou-Chung

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Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature von Ru-Chin Tu, Chun-Ju Tun, Shyi-Ming Pan, Chang-Cheng Chuo, Sheu, J.K., Ching-En Tsai, Te-Chung Wang, Gou-Chung Chi

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Approaching conversion limit with all-dielectric solar cell reflectors von Fu, Sze Ming, Lai, Yi-Chun, Tseng, Chi Wei, Yan, Sheng Lun, Zhong, Yan Kai, Shen, Chang-Hong, Shieh, Jia-Min, Li, Yu-Ren, Cheng, Huang-Chung, Chi, Gou-chung, Yu, Peichen, Lin, Albert

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Characteristics of the epitaxy of InGaN-based light-emitting diodes grown by nanoscale epitaxial lateral overgrowth using a nitrided titanium buffer layer von Shieh, Chen-Yu, Li, Zhen-Yu, Chang, Jenq-Yang, Chi, Gou-Chung

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Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate von Lee, Chia-Yu, Tzou, An-Jye, Lin, Bing-Cheng, Lan, Yu-Pin, Chiu, Ching-Hsueh, Chi, Gou-Chung, Chen, Chi-Hsiang, Kuo, Hao-Chung, Lin, Ray-Ming, Chang, Chun-Yen

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Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks von Lin, Da-Wei, Lee, Chia-Yu, Liu, Che-Yu, Han, Hau-Vei, Lan, Yu-Pin, Lin, Chien-Chung, Chi, Gou-Chung, Kuo, Hao-Chung

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