Surface band bending of a -plane GaN studied by scanning Kelvin probe microscopy von Chevtchenko, S., Ni, X., Fan, Q., Baski, A. A., Morkoç, H.

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Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer von Chevtchenko, S. A., Cho, E., Brunner, F., Bahat-Treidel, E., Würfl, J.

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Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors von Chevtchenko, S.A., Schulz, M., Bahat-Treidel, E., John, W., Freyer, S., Kurpas, P., Würfl, J.

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Thermal conductivity of bulk ZnO after different thermal treatments von Özgür, Ü., Gu, X., Chevtchenko, S., Spradlin, J., Cho, S. -J., Morkoç, H., Pollak, F. H., Everitt, H. O., Nemeth, B., Nause, J. E.

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Study of SiNx and SiO2 passivation of GaN surfaces von Chevtchenko, S. A., Reshchikov, M. A., Fan, Q., Ni, X., Moon, Y. T., Baski, A. A., Morkoç, H.

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Reactive ion etch damage on GaN and its recovery von Fan, Qian, Chevtchenko, S., Ni, Xianfeng, Cho, Sang-Jun, Yun, Feng, Morkoç, Hadis

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n-Al0.15Ga0.85N/p-6H–SiC heterostructure and based bipolar transistor von Alivov, Ya.I., Fan, Q., Ni, X., Chevtchenko, S., Bhat, I.B., Morkoç, H.

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n-Al0.15Ga0.85 N/p-6H–SiC heterostructure and based bipolar transistor von Alivov, Ya.I., Fan, Q., Ni, X., Chevtchenko, S., Bhat, I.B., Morkoç, H.

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Optical and Magnetic Properties of ZnO:V Prepared by Ion Implantation von Avrutin, V., Özgür, Ü., Chevtchenko, S., Litton, C., Morkoç, H.

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Structural Characteristics of Sputter-Deposited Pb(Zr,Ti)O3/ZnO Heterostructure Films von Alivov, Ya. I., Agra, F., Xiao, B., Chevtchenko, S., Morkoç, H., Yoon, Jong-Gul

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Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition von Özgür, Ü., Ni, X., Nie, J., Morkoç, Hadis, Devaty, Robert P., Choyke, Wolfgang J., Chevtchenko, S.

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Effects of Rapid Thermal Annealing Treatment on the Surface Band Bending of n-type GaN Studied by Surface Potential Electric Force Microscopy von Baski, A.A., Fan, Q., Litton, Cole W., Morkoç, Hadis, Chevtchenko, S.

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GaN Resistive Gas Sensors for Hydrogen Detection von Yun, F., Fawcett, T.J., Morkoç, Hadis, Wolan, J.T., Moon, Y.T., Chevtchenko, S.

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Comparative study of the (0001) and ( 000 1 ¯ ) surfaces of ZnO von Chevtchenko, S. A., Moore, J. C., Özgür, Ü., Gu, X., Baski, A. A., Morkoç, H., Nemeth, B., Nause, J. E.

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GaN resistive hydrogen gas sensors von Yun, Feng, Chevtchenko, Serguei, Moon, Yong-Tae, Morkoç, Hadis, Fawcett, Timothy J., Wolan, John T.

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Structural and electrical properties of Pb(Zr,Ti)O3 films grown by molecular beam epitaxy von Izyumskaya, N., Avrutin, V., Gu, X., Xiao, B., Chevtchenko, S., Yoon, J.-G., Morkoç, H., Zhou, Lin, Smith, David J.

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Optical and magnetic properties of ZnO:V prepared by ion implantation: Group III Nitrides, SiC and ZnO von AVRUTIN, V, OZGUR, U, CHEVTCHENKO, S, LITTON, C, MORKOC, H

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Structural and electrical properties of Pb ( Zr , Ti ) O 3 films grownby molecular beam epitaxy von Izyumskaya, N., Avrutin, V., Gu, X., Xiao, B., Chevtchenko, S., Yoon, J.-G., Morkoç, H., Zhou, Lin, Smith, David J.

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Study of SiN x and SiO 2 passivation of GaN surfaces von Chevtchenko, S. A., Reshchikov, M. A., Fan, Q., Ni, X., Moon, Y. T., Baski, A. A., Morkoç, H.

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Structural and electrical properties of Pb(Zr,Ti)O{sub 3} films grown by molecular beam epitaxy von Izyumskaya, N., Avrutin, V., Gu, X., Xiao, B., Chevtchenko, S., Yoon, J.-G., Morkoc, H., Zhou Lin, Smith, David J., Deptartment of Physics, Arizona State University, Tempe, Arizona 85287

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