Formation of Stacking Faults in Diffused SiC p+/n-/n+ and p+/p-/n+ Diodes von Sudarshan, Tangali S., Soloviev, Stanislav I., Cherednichenko, Dimitri I.

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Modification of 6H-SiC Surface Defect Structure during Hydrogen Etching von Tipirneni, Naveen, Sudarshan, Tangali S., Bondokov, Robert T., Cherednichenko, Dimitri I.

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Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth von Drachev, Roman, Khlebnikov, Yuri I., Sudarshan, Tangali S., Khlebnikov, I.I., Cherednichenko, Dimitri I.

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Influence of the Crystal Thickness on the SiC PVT Growth Rate von Drachev, Roman, Khlebnikov, Yuri I., Sudarshan, Tangali S., Khlebnikov, I.I., Cherednichenko, Dimitri I.

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Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes von Khlebnikov, Yuri I., Sudarshan, Tangali S., Khlebnikov, I.I., Cherednichenko, Dimitri I.

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An Analytical Study of the SiC Growth Process from Vapor Phase von Khlebnikov, Yuri I., Sudarshan, Tangali S., Khlebnikov, I.I., Soloviev, Stanislav I., Cherednichenko, Dimitri I.

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