Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n -type GaN epilayers von Cheong, M. G., Kim, K. S., Oh, C. S., Namgung, N. W., Yang, G. M., Hong, C.-H., Lim, K. Y., Suh, E.-K., Nahm, K. S., Lee, H. J., Lim, D. H., Yoshikawa, A.

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Wavelength-dispersive x-ray microanalysis as a novel method for studying magnesium doping in gallium nitride epitaxial films von Deatcher, C J, Bejtka, K, Martin, R W, Romani, S, Kheyrandish, H, Smith, L M, Rushworth, S A, Liu, C, Cheong, M G, Watson, I M

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Exposure of defects in GaN by plasma etching von CHOI, H. W, LIU, C, CHEONG, M. G, ZHANG, J, CHUA, S. J

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Strong acceptor density and temperature dependences of thermal activation energy of acceptors in a Mg-doped GaN epilayer grown by metalorganic chemical-vapor deposition von Cheong, M. G., Kim, K. S., Kim, C. S., Choi, R. J., Yoon, H. S., Namgung, N. W., Suh, E.-K., Lee, H. J.

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Spatial variation of photoluminescence and related defects in InGaN/GaN quantum wells von Jeong, M. S., Kim, Y.-W., White, J. O., Suh, E.-K., Cheong, M. G., Kim, C. S., Hong, C.-H., Lee, H. J.

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Properties of InGaN/GaN quantum wells and blue light emitting diodes von Cheong, M.G, Suh, E.-K, Lee, H.J

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Impurity band in magnesium-doped GaN layers grown by metalorganic chemical vapor deposition von Kang, D. S., Cheong, M. G., Lee, S.-K., Suh, E.-K., Hong, C.-H., Lee, H. J.

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Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition von Kim, K. S., Cheong, M. G., Hong, C.-H., Yang, G. M., Lim, K. Y., Suh, E.-K., Lee, H. J.

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Silicon Doping of Gallium Nitride Using Ditertiarybutylsilane von Deatcher, C.J., Liu, C., Cheong, M.-G., Smith, L.M., Rushworth, S., Widdowson, A., Watson, I.M.

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Rutherford backscattering analysis of GaN decomposition von Choi, H. W., Cheong, M. G., Rana, M. A., Chua, S. J., Osipowicz, T., Pan, J. S.

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Electrical transport properties of highly Mg-doped GaN epilayers grown by MOCVD von Cheong, M.G, Kim, K.S, Namgung, N.W, Han, M.S, Yang, G.M, Hong, C.-H, Suh, E.-K, Lim, K.Y, Lee, H.J, Yoshikawa, A

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Study of the origin of luminescence in high indium composition InGaN/GaN quantum wells von Cheong, M. G., Liu, C., Choi, H. W., Lee, B. K., Suh, E.-K., Lee, H. J.

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Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition von Cheong, M. G., Yoon, H. S., Choi, R. J., Kim, C. S., Yu, S. W., Hong, C.-H., Suh, E.-K., Lee, H. J.

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Two different behavior patterns of photoluminescence depending on Mg doping rate in p -type GaN epilayers von Jeong, S. M., Shim, H. W., Yoon, H. S., Cheong, M. G., Choi, R. J., Suh, E.-K., Lee, H. J.

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Bias effect on the luminescent properties of rectangular and trapezoidal quantum-well structures von Cheong, M. G., Choi, R. J., Suh, E.-K., Lee, H. J.

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Direct measurement of electron transport in GaN/sapphire interface layer grown by metalorganic chemical vapor deposition von Kim, K. S., Cheong, M. G., Cho, H. K., Suh, E. K., Lee, H. J.

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High-quality In0.3Ga0.7N/GaN quantum well growth and their optical and structural properties von Cheong, Myung Goo, Suh, E-K, Lee, H J

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A Two-Band Analysis of Electrical Transport in n-Type GaN Epilayers von Oh, Kyung Sik, Suh, Eun Kyung, Lee, H.J., Cheong, M.G.

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Growth and properties of InGaN/GaN quantum wells and blue light emitting diodes by metal–organic chemical vapour deposition von Cheong, Myung Goo, Suh, Eun-Kyung, Lee, Hyung Jae, Dawson, Martin

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Giant magneto-elastic coupling in multiferroic hexagonal manganites von Lee, Seongsu, Pirogov, A., Kang, Misun, Jang, Kwang-Hyun, Yonemura, M., Kamiyama, T., Cheong, S.-W., Gozzo, F., Shin, Namsoo, Kimura, H., Noda, Y., Park, J.-G.

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