A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped Body von Liu, Feng, He, Jin, Zhang, Lining, Zhang, Jian, Hu, Jinghua, Ma, Chenyue, Chan, Mansun

Volltext

Predictive Value of Machine Learning for Recurrence of Atrial Fibrillation after Catheter Ablation: A Systematic Review and Meta-Analysis von Fan, Xingman, Li, Yanyan, He, Qiongyi, Wang, Meng, Lan, Xiaohua, Zhang, Kaijie, Ma, Chenyue, Zhang, Haitao

Volltext

Effects of labeling on wildlife conservation education von Zheng, Li, Tong, Zepeng, Ma, Chenyue, Wang, Fan, Li, Meifan, Yang, Bo, Sun, Yan

Volltext

Universal framework for temperature dependence prediction of the negative bias temperature instability based on microscope pictures von Ma, Chenyue, Zhang, Lining, Lin, Xinnan, Chan, Mansun

Volltext

ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors von Ma, Chenyue, Chen, Hongwei, Zhou, Chunhua, Huang, Sen, Yuan, Li, Roberts, John, Chen, Kevin J.

Volltext

Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET von Zhang, Lining, Ma, Chenyue, He, Jin, Lin, Xinnan, Chan, Mansun

Volltext

Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes von Shi, Min, He, Jin, Zhang, Lining, Ma, Chenyue, Zhou, Xingye, Lou, Haijun, Zhuang, Hao, Wang, Ruonan, Li, Yongliang, Ma, Yong, Wu, Wen, Wang, Wenping, Chan, Mansun

Volltext

The implementation of a least square support vector regression model utilizing meta-heuristic algorithms for predicting undrained shear strength von Qiang, Shao, Chenyue, Ma, Dezhi, Kong

Volltext

Correction to: The implementation of a least square support vector regression model utilizing meta-heuristic algorithms for predicting undrained shear strength von Qiang, Shao, Chenyue, Ma, Dezhi, Kong

Volltext

Incremental 3-D Global Routing Considering Cell Movement and Complex Routing Constraints von Zou, Peng, Cai, Zhijie, Lin, Zhifeng, Ma, Chenyue, Yu, Jun, Chen, Jianli

Volltext

Reciprocal effects between negative affect and emotion regulation in daily life von Wang, Xiaoqin, Shao, Shiyu, Cai, Zhouqu, Ma, Chenyue, Jia, Lei, Blain, Scott D., Tan, Yafei

Volltext

A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection von Ma, Chenyue, Zhang, Lining, Zhang, Chenfei, Zhang, Xiufang, He, Jin, Zhang, Xing

Volltext

Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions von MA, Chenyue, MATTAUSCH, Hans Jürgen, MIYAKE, Masataka, IIZUKA, Takahiro, MATSUZAWA, Kazuya, YAMAGUCHI, Seiichiro, HOSHIDA, Teruhiko, KINOSHITA, Akinori, ARAKAWA, Takahiko, HE, Jin, MIURA-MATTAUSCH, Mitiko

Volltext

Temperature dependence of the interface state distribution due to hot carrier effect in FinFET device von Ma, Chenyue, Wang, Hao, Zhang, Chenfei, Zhang, Xiufang, He, Jin, Zhang, Xing

Volltext

Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect von Ma, Chenyue, Mattausch, Hans Jürgen, Miyake, Masataka, Matsuzawa, Kazuya, Iizuka, Takahiro, Yamaguchi, Seiichiro, Hoshida, Teruhiko, Kinoshita, Akinari, Arakawa, Takahiko, He, Jin, Miura-Mattausch, Mitiko

Volltext

Comparison and improvement of two core compact models for double-gate MOSFETs von Zhou, Xingye, Zhou, Zhize, Zhang, Jian, Zhang, Lining, Ma, Chenyue, He, Jin, Zhang, Xing

Volltext

A Dynamic Time Evolution Method for Concurrent Device-Circuit Aging Simulations von Zhang, Lining, Ma, Chenyue, Xiao, Ying, Zhang, Hanyu, Lin, Xinnan, Chan, Mansun

Volltext

Diode parameter extraction by a linear cofactor difference operation method von Ma, Chenyue, Zhang, Chenfei, Wang, Hao, He, Jin, Lin, Xinnan, Mansun, Chan

Volltext

FinFET reliability study by forward gated-diode generation–recombination current von Ma, Chenyue, Li, Bo, Wei, Yiqun, Zhang, Lining, He, Jin, Zhang, Xing, Lin, Xinnan, Chan, Mansun

Volltext

Unified Reaction–Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect von Ma, Chenyue, Mattausch, Hans Jürgen, Miyake, Masataka, Matsuzawa, Kazuya, Iizuka, Takahiro, Yamaguchi, Seiichiro, Hoshida, Teruhiko, Kinoshita, Akinari, Arakawa, Takahiko, He, Jin, Miura-Mattausch, Mitiko

Volltext