Editorial for the Special Issue on Recent Advances in Thin Film Electronic Devices von Dong, Chengyuan

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Tumor extravasation and infiltration as barriers of nanomedicine for high efficacy: The current status and transcytosis strategy von Zhou, Quan, Dong, Chengyuan, Fan, Wufa, Jiang, Haiping, Xiang, Jiajia, Qiu, Nasha, Piao, Ying, Xie, Tao, Luo, Yingwu, Li, Zichen, Liu, Fusheng, Shen, Youqing

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Insight into glass transition temperature and mechanical properties of PVA/TRIS functionalized graphene oxide composites by molecular dynamics simulation von Dong, Chengyuan, Zheng, Weizhong, Wang, Lu, Zhen, Weijun, Zhao, Ling

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PBK as a Potential Biomarker Associated with Prognosis of Glioblastoma von Dong, Chengyuan, Fan, Wenhua, Fang, Sheng

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Comprehensive analysis of PSME3: from pan-cancer analysis to experimental validation von Dong, Chengyuan, Guo, Yadong, Yang, Yanrong, Ge, Xin

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IGFBP5 increases cell invasion and inhibits cell proliferation by EMT and Akt signaling pathway in Glioblastoma multiforme cells von Dong, Chengyuan, Zhang, Junwen, Fang, Sheng, Liu, Fusheng

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Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors von Zhou, Yan, Dong, Chengyuan

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Comprehensive analysis of disulfidptosis-related lncRNA features for prognosis and immune landscape prediction in colorectal cancer von Dong, Chengyuan, Guo, Yadong, Wang, Ping, Yin, Shiqi, Ge, Xin

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IL4I1 in M2-like macrophage promotes glioma progression and is a promising target for immunotherapy von Ye, Feng, Wang, Lichong, Li, Yuanyou, Dong, Chengyuan, Zhou, Liangxue, Xu, Jianguo

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Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection von Fan, Zenghui, Shen, Ao, Xia, Yong, Dong, Chengyuan

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Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers von Zhang, Wen, Fan, Zenghui, Shen, Ao, Dong, Chengyuan

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Recent Advances in Thin Film Electronic Devices

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Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors von Xie, Haiting, Zhou, Yan, Zhang, Ying, Dong, Chengyuan

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An Analysis of Risk Factors for Asthenospermia: A Hospital-Based Study in China von Dong, Chengyuan

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Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers von Xie, Haiting, Liu, Guochao, Zhang, Lei, Zhou, Yan, Dong, Chengyuan

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Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions von GongTan Li, RunZe Zhan, Bo-Ru Yang, Chuan Liu, ChengYuan Dong, Chia-Yu Lee, Yuan-Chun Wu, Po-Yen Lu, ShaoZhi Deng, Shieh, Han-Ping D., NingSheng Xu

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The methylation status of the platelet-derived growth factor-B gene promoter and its regulation of cellular proliferation following folate treatment in human glioma cells von Zhou, Yiqiang, Jin, Guishan, Mi, Ruifang, Dong, Chengyuan, Zhang, Jin, Liu, Fusheng

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Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors von Zhan, Runze, Dong, Chengyuan, Liu, Po-Tsun, Shieh, Han-Ping D.

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Solution-Processed Indium-Zinc-Oxide Thin Film Transistors With High- k Magnesium Titanium Oxide Dielectric von Zhao Yang, Haifeng Pu, Can Cui, Li Zhang, Chengyuan Dong, Qun Zhang

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Improvements in passivation effect of amorphous InGaZnO thin film transistors von Dong, Chengyuan, Shi, Junfei, Wu, Jie, Chen, Yuting, Zhou, Daxiang, Hu, Zhe, Xie, Haiting, Zhan, Runze, Zou, Zhongfei

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