Oral exposure to ovalbumin alters glucose metabolism in sensitized mice: upregulation of HIF-1α-mediated glycolysis von Min, Fangfang, Wang, Zhongliang, Shao, Huming, Zheng, Shuangyan, Cheng, Youdou, Liu, Wenfeng, Wang, Jian, Wang, Meini, Wu, Yong, Chen, Hongbing

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Applicability of the allergen Ana o 3 in the construction of a cashew nut allergy paradigm in BALB/c mice von Cheng, Youdou, Min, Fangfang, Yu, Tian, Yang, Xintong, Wu, Yang, Yin, Zichen, Chen, Hongbing, Gao, Jinyan, Wu, Yong

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Light-activated ultrasensitive NO2 gas sensor based on heterojunctions of CuO nanospheres/MoS2 nanosheets at room temperature von Bai, Haineng, Guo, Hui, Feng, Cheng, Wang, Jin, Liu, Bin, Xie, Zili, Guo, Fuqiang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou

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UV-activated CuO nanospheres modified with rGO nanosheets for ppb-level detection of NO2 gas at room temperature von Bai, Haineng, Feng, Cheng, Guo, Hui, Li, Xiaoli, Liu, Weifeng, Feng, Yamin, Liu, Kuili, Chen, Dunjun, Zheng, Youdou, Guo, Fuqiang

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Localized surface plasmon enhanced Ga2O3 solar blind photodetectors von Tang, Ruifan, Li, Guanqi, Li, Cheng, Li, Jinchai, Zhang, Yanfang, Huang, Kai, Ye, Jiandong, Kang, Junyong, Zhang, Rong, Zheng, Youdou

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A room-temperature chemiresistive NO2 sensor based on one-step synthesized SnO2 nanospheres functionalized with Pd nanoparticles and rGO nanosheets von Bai, Haineng, Guo, Hui, Feng, Cheng, Wang, Jin, Liu, Bin, Xie, Zili, Guo, Fuqiang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou

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Study on unusual response behavior of NO2 sensor based on UV enhanced Pd-functionalized Ga2O3 microrods von Feng, Cheng, Qiao, Guang, Peng, Yanghu, Hao, Lin, Guo, Hui, Bai, Haineng, Ye, Jiandong, Zheng, Youdou, Zhang, Rong, Chen, Dunjun

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Highly responsive and selective ppb-level NO2 gas sensor based on porous Pd-functionalized CuO/rGO at room temperature von Bai, Haineng, Guo, Hui, Cheng, Feng, Wang, Jin, Liu, Bin, Xie, Zili, Guo, Fuqiang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou

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3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure von Xu, Ru, Chen, Peng, Liu, Menghan, Zhou, Jing, Li, Yimeng, Cheng, Kai, Liu, Bin, Chen, Dunjun, Xie, Zili, Zhang, Rong, Zheng, Youdou

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Chemiresistive room temperature H2S gas sensor based on MoO3 nanobelts decorated with MnO2 nanoparticles von Bai, Haineng, Feng, Cheng, Chen, Yiru, Yan, Yali, Feng, Yamin, Liu, Kuili, Zhang, Baohua, Wang, Jin, Chen, Dunjun, Zheng, Youdou, Guo, Fuqiang

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Realization of regular resonance mode in GaN-based polygonal microdisks on Si von Liu, Menghan, Chen, Peng, Zhou, Jing, Xu, Ru, Mao, Xiaokang, Xie, Zili, Xiu, Xiangqian, Chen, Dunjun, Liu, Bin, Han, Ping, Shi, Yi, Zhang, Rong, Zheng, Youdou, Cheng, Kai, Zhang, Liyang

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1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse p-n Junction Termination von Xu, Ru, Chen, Peng, Liu, Menghan, Zhou, Jing, Yang, Yunfei, Li, Yimeng, Ge, Cheng, Peng, Haocheng, Liu, Bin, Chen, Dunjun, Xie, Zili, Zhang, Rong, Zheng, Youdou

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Gate-first AlGaN/GaN HEMT technology for enhanced threshold voltage stability based on MOCVD-grown in situ SiNx von Cheng, Liang, Xu, Weizong, Pan, Danfeng, Liang, Huinan, Wang, Ronghua, Zhu, Youhua, Ren, Fangfang, Zhou, Dong, Ye, Jiandong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai

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Gate-first process compatible, high-quality in situ SiNx for surface passivation and gate dielectrics in AlGaN/GaN MISHEMTs von Cheng, Liang, Xu, Weizong, Pan, Danfeng, Zhu, Youhua, Ren, Fangfang, Zhou, Dong, Ye, Jiandong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai

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High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing von Xu, Ru, Chen, Peng, Zhou, Jing, Li, Yimeng, Li, Yuyin, Zhu, Tinggang, Cheng, Kai, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Liu, Bin, Xiu, Xiangqian, Han, Ping, Shi, Yi, Zhang, Rong, Zheng, Youdou

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Stable single-mode operation of distributed feedback quantum cascade laser under high current via a grating reflector von Ye, Fan, Cheng, Fengmin, Jia, Zhiwei, Zhang, Jinchuan, Zhuo, Ning, Liu, Fengqi, Zheng, Youdou, Shi, Yi

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Localized surface plasmon enhanced Ga 2 O 3 solar blind photodetectors von Tang, Ruifan, Li, Guanqi, Li, Cheng, Li, Jinchai, Zhang, Yanfang, Huang, Kai, Ye, Jiandong, Kang, Junyong, Zhang, Rong, Zheng, Youdou

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High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing (Small 37/2022) von Xu, Ru, Chen, Peng, Zhou, Jing, Li, Yimeng, Li, Yuyin, Zhu, Tinggang, Cheng, Kai, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Liu, Bin, Xiu, Xiangqian, Han, Ping, Shi, Yi, Zhang, Rong, Zheng, Youdou

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Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection von Xu, Weizong, Shi, Yating, Ren, Fangfang, Zhou, Dong, Su, Linlin, Liu, Qing, Cheng, Liang, Ye, Jiandong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai

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Gate-first AlGaN/GaN HEMT technology for enhanced threshold voltage stability based on MOCVD-grown in situ SiN x von Cheng, Liang, Xu, Weizong, Pan, Danfeng, Liang, Huinan, Wang, Ronghua, Zhu, Youhua, Ren, Fangfang, Zhou, Dong, Ye, Jiandong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai

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