Investigation Into the Scalability of Selectively Implanted Buried Subcollector (SIBS) for Submicrometer InP DHBTs von Li, James Chingwei, Chow, David H., Asbeck, Peter M., Sokolich, Marko, Royter, Yakov, Hussain, Tahir, Chen, Mary Y., Fields, Charles H., Rajavel, Rajesh D., Bui, Steven S., Shi, Binqiang, Hitko, Donald A.

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InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers von Sokolich, M., Chen, M.Y., Rajavel, R.D., Chow, D.H., Royter, Y., Thomas, S., Fields, C.H., Binqiang Shi, Bui, S.S., James Chingwei Li, Hitko, D.A., Elliott, K.R.

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Patterned n+ implant into InP substrate for HBT subcollector von Chen, M.Y., Sokolich, M., Chow, D.H., Bui, S., Royter, Y., Hitko, D., Thomas, S., Fields, C.H., Rajavel, R.D., Biqiang Shi

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200 GHz InP DHBT technology using selectively implanted buried sub-collector (SIBS) for broadband amplifiers von Li, James C., Lao, Zhihao, Chen, Mary Y., Rajavel, Rajesh D., Thomas, Stephen, Bui, Steven S., Shi, Binqiang, Guinn, Keith V., Duvall, Janna R., Hitko, Donald A., Chow, David H., Sokolich, Marko

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The Gene Encoding the Mitogen-responsive Phosphoprotein Dab2 Is Differentially Regulated by GATA-6 and GATA-4 in the Visceral Endoderm von Morrisey, Edward E., Musco, Simone, Chen, Mary Y.Z., Lu, Min Min, Leiden, Jeffrey M., Parmacek, Michael S.

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TA BASED OHMIC CONTACT von CHEN, Mary Y, CHU, Rongming

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200GHz InP DHBT technology using selectively implanted buried sub-collector (SIBS) for broadband amplifiers von Li, James C., Lao, Zhihao, Chen, Mary Y., Rajavel, Rajesh D., Thomas, Stephen, Bui, Steven S., Shi, Binqiang, Guinn, Keith V., Duvall, Janna R., Hitko, Donald A., Chow, David H., Sokolich, Marko

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Ta based ohmic contact von Chu Rongming, Chen Mary Y

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TA BASED OHMIC CONTACT von CHEN, Mary Y, CHU, Rongming

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TA BASED OHMIC CONTACT von Chu Rongming, CHEN Mary Y

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TA BASED AU-FREE OHMIC CONTACTS IN ADVANCED AIGAN/GAN BASED HFETS AND/OR MOSHFETS FOR POWER SWITCH APPLICATIONS von CHEN MARY Y, CHU RONMING

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TA BASED OHMIC CONTACT von CHEN, MARY Y, CHU, RONGMING

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FIELD EFFECT TRANSISTOR AND METHOD von CHU, Rongming, CHEN, Mary Y, BROWN, David F, LI, Zijian "Ray", CHEN, Xu, WILLIAMS, Adam J, BOUTROS, Karim S

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III-nitride P-channel transistor von Chu Rongming, Cao Yu, Chen Mary Y, Li Zijian "Ray"

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A high-performance AlInAs/InGaAs/InP DHBT K-band power cell von Virk, R.S., Chen, M.Y., Chanh Nguyen, Takyiu Liu, Matloubian, M., Rensch, D.B.

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Quantum dots (QD) for semiconductor integrated circuit von CHEN MARY Y, SOKOLICH MARKO, DEELMAN PETER W

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Ta based ohmic contact von CHEN MARY Y, CHU RONGMING

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FIELD EFFECT TRANSISTOR AND METHOD von CHU, Rongming, CHEN, Mary Y, BROWN, David F, LI, Zijian "Ray", CHEN, Xu, WILLIAMS, Adam J, BOUTROS, Karim S

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III-Nitride insulating-gate transistors with passivation von CHEN MARY Y, CHU RONGMING, CHEN XU, LI ZIJIAN "RAY", BOUTROS KARIM S

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Semiconductor device coding using quantum dot technology von CHEN MARY Y, SOKOLICH MARKO, DEELMAN PETER W

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