Microscopic origins of anisotropy for the epitaxial growth of 3C-SiC (0001) vicinal surface: A kinetic Monte Carlo study von Ai, Wensen, Chen, Xuejiang, Feng, Jianmei

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Stepped morphology on vicinal 3C- and 4H-SiC (0001) faces: A kinetic Monte Carlo study von Chen, Xuejiang, Li, Yuan

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Real-time modular dynamic modeling for compression system of altitude ground test facilities von SU, Yang, CHEN, Xuejiang, WANG, Xin, LI, Xiaodong, LIU, Xiaoming

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A niching genetic algorithm applied to optimize a SiC-bulk crystal growth system von Su, Juan, Chen, Xuejiang, Li, Yuan, Pons, Michel, Blanquet, Elisabeth

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Three-dimensional global analysis of thermal stress and dislocations in a silicon ingot during a unidirectional solidification process with a square crucible von Chen, Xuejiang, Nakano, Satoshi, Kakimoto, Koichi

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Numerical design of induction heating in the PVT growth of SiC crystal von Su, Juan, Chen, Xuejiang, Li, Yuan

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Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage von Ai, Wensen, Chen, Xuejiang

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Study of Parallel Compressor System and Real-Time Simulation Based on Modular Dynamic System Greitzer Modeling von Su, Yang, Chen, Xuejiang, Liu, Xiaoming, Wang, Xin, Li, Xiaodong

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Kinetic Monte Carlo study on the effect of growth conditions on the epitaxial growth of 3C–SiC (0001) vicinal surface von Chen, Xuejiang, Zhang, Xinyao, Ai, Wensen

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Study on three-dimensional critical nucleation on a planar substrate of 3C-SiC crystal von Xia, Qian, Chen, Xuejiang, Ai, Wensen

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Kinetic Monte Carlo simulation study of the early stages of epitaxial SiC (0001) growth von Li, Yuan, Chen, Xuejiang, Ai, Wensen

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Investigation on the mechanism of instability for step morphology during 3C-SiC (111) vicinal surface epitaxial growth von Chen, Xuejiang, Zhang, Xinyao, Ai, Wensen, Lin, Yishan

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Study on the competitive growth mechanism of SiC polytypes using Kinetic Monte Carlo method von Chen, Xuejiang, Zhao, Hao, Ai, Wensen

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Early stage nucleation mechanism for SiC(0001) surface epitaxial growth von Ai, Wensen, Chen, Xuejiang, Feng, Jianmei

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Numerical simulation of a new SiC growth system by the dual-directional sublimation method von Chen, Xuejiang, Nishizawa, Shin-ichi, Kakimoto, Koichi

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Kinetic Monte Carlo method for epitaxial 3C-SiC (0001) growth on vicinal surfaces von Li, Yuan, Chen, Xuejiang, Ai, Wensen

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Lattice kinetic Monte Carlo method on fractal growth of transition metal dichalcogenides von Chen, Xuejiang, Lin, Yishan, Ai, Wensen, Zhang, Xinyao

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Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth von Su, Peng, Ai, Wensen, Chen, Xuejiang, Liu, Lijun

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Tyndall-effect-enhanced supersensitive naked-eye determination of mercury (II) ions with silver nanoparticles von Huang, Jinkun, Mo, Xiaomei, Fu, Haiyan, Sun, Yao, Gao, Qian, Chen, Xuejiang, Zou, Jianmei, Yuan, Yali, Nie, Jinfang, Zhang, Yun

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Study on formation of step bunching on 6H-SiC (0001) surface by kinetic Monte Carlo method von Li, Yuan, Chen, Xuejiang, Su, Juan

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