Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature von Yu Fu, Rui-Min Xu, Xin-Xin Yu, Jian-Jun Zhou, Yue-Chan Kong, Tang-Sheng Chen, Bo Yan, Yan-Rong Li, Zheng-Qiang Ma, Yue-Hang Xu

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Fabrication and small signal modeling of 0.5 μm InGaAs/InP DHBT demonstrating FT/Fmax of 350/532 GHz von Niu, Bin, Wang, Yuan, Cheng, Wei, Xie, Zi-Li, Lu, Hai-Yan, Sun, Yan, Xie, Jun-Ling, Chen, Tang-Sheng

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Channel Temperature Measurement of AlGaN/GaN HEMTs by Forward Schottky Characteristics von Zhang, Guang-Chen (光沉 张), Feng, Shi-Wei (士维 冯), Hu, Pei-Feng (培峰 胡), Zhao, Yan (艳赵), Guo, Chun-Sheng (春生 郭), Xu, Yang (洋徐), Chen, Tang-Sheng (堂胜 陈), Jiang, Yi-Jian (毅坚 蒋)

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AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm -Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V von Yu, Xin-Xin, Ni, Jin-Yu, Li, Zhong-Hui, Kong, Cen, Zhou, Jian-Jun, Dong, Xun, Pan, Lei, Kong, Yue-Chan, Chen, Tang-Sheng

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Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs von Liu, Ting-Ting, Zhang, Kai, Zhu, Guang-Run, Zhou, Jian-Jun, Kong, Yue-Chan, Yu, Xin-Xin, Chen, Tang-Sheng

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Prediction of toolpath redundancy for NC machining of free-form surfaces based on automatic recognition of steep-wall features von Wang, Qing-Hui, Zhang, Xiao-Ming, Li, Jing-Rong, Tang, Chen-Sheng

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Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip von 吴立枢 赵岩 沈宏昌 张有涛 陈堂胜

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Ultraviolet Phototransistors on AlGaN/GaN Heterostructures von Chen, Chen, Wen-Hai, Jiang, Chun-Jiang, Ren, Zhong-Hui, Li, Gang, Jiao, Xun, Dong, Tang-Sheng, Chen

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Experimental Quantum Byzantine Agreement on a Three-User Quantum Network with Integrated Photonics von Xu, Jing, Cheng, Qian, Chen-Xun, Weng, Bing-Hong, Li, Chen, Zhe, Chen-Quan, Wang, Tang, Jie, Xiao-Wen, Gu, Yue-Chan, Kong, Tang-Sheng, Chen, Hua-Lei, Yin, Jiang, Dong, Niu, Bin, Liang-Liang, Lu

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High performance wafer scale flexible InP double heterogeneous bipolar transistors von Wu, LiShu, Dai, JiaYun, Wang, Yuan, Kong, YueChan, Chen, TangSheng, Zhang, Tong

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Experimental quantum Byzantine agreement on a three-user quantum network with integrated photonics von Jing, Xu, Qian, Cheng, Weng, Chen-Xun, Li, Bing-Hong, Chen, Zhe, Wang, Chen-Quan, Tang, Jie, Gu, Xiao-Wen, Kong, Yue-Chan, Chen, Tang-Sheng, Yin, Hua-Lei, Jiang, Dong, Niu, Bin, Lu, Liang-Liang

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Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature Project supported by the National Natural Science Foundation of... von Fu, Yu, Xu, Rui-Min, Yu, Xin-Xin, Zhou, Jian-Jun, Kong, Yue-Chan, Chen, Tang-Sheng, Yan, Bo, Li, Yan-Rong, Ma, Zheng-Qiang, Xu, Yue-Hang

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Enhanced interface properties of diamond MOSFETs with Al 2 O 3 gate dielectric deposited via ALD at a high temperature von Fu, Yu, Xu, Rui-Min, Yu, Xin-Xin, Zhou, Jian-Jun, Kong, Yue-Chan, Chen, Tang-Sheng, Yan, Bo, Li, Yan-Rong, Ma, Zheng-Qiang, Xu, Yue-Hang

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Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs Project supported by the National Natural Science Foundation of China (Grant Nos. 61504125, 61474101... von Liu, Ting-Ting, Zhang, Kai, Zhu, Guang-Run, Zhou, Jian-Jun, Kong, Yue-Chan, Yu, Xin-Xin, Chen, Tang-Sheng

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T-cell vaccination leads to suppression of intrapancreatic Th17 cells through Stat3-mediated RORyt inhibition in autoimmune diabetes von Min Wang Liu Yang Xiaoyan Sheng Weilei Chen Haiqing Tang Hongguang Sheng Beili Xi Ying Qin Zang

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Fabrication and small signal modeling of 0.5 µm InGaAs/InP DHBT demonstrating FT/Fmax of 350/532 GHz von Niu, Bin, Wang, Yuan, Cheng, Wei, Xie, Zi-Li, Lu, Hai-Yan, Sun, Yan, Xie, Jun-Ling, Chen, Tang-Sheng

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Fabrication and small signal modeling of 0.5 μm InGaAs/InP DHBT demonstrating F T / F max of 350/532 GHz von Niu, Bin, Wang, Yuan, Cheng, Wei, Xie, Zi‐Li, Lu, Hai‐Yan, Sun, Yan, Xie, Jun‐Ling, Chen, Tang‐Sheng

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Fabrication and small signal modeling of 0.5 mu m InGaAs/InP DHBT demonstrating F sub(T)/F sub(max) of 350/532 GHz von Niu, Bin, Wang, Yuan, Cheng, Wei, Xie, Zi-Li, Lu, Hai-Yan, Sun, Yan, Xie, Jun-Ling, Chen, Tang-Sheng

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Structure and Strain Properties of GaN Films Grown on Si (111) Substrates with Al x Ga 1− x N/Al y Ga 1− y N Superlattices von Pan, Lei, Ni, Jin-Yu, Yu, Xin-Xin, Dong, Xun, Peng, Da-Qing, Li, Chuan-Hao, Li, Zhong-Hui, Chen, Tang-Sheng

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Structure and Strain Properties of GaN Films Grown on Si (111) Substrates with Al sub(x)Ga sub(1-x) N/Al sub(y)Ga sub(1-y)N Superlattices von Pan, Lei, Ni, Jin-Yu, Yu, Xin-Xin, Dong, Xun, Peng, Da-Qing, Li, Chuan-Hao, Li, Zhong-Hui, Chen, Tang-Sheng

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