Random walks on complex networks with multiple resetting nodes: A renewal approach von Wang, Shuang, Chen, Hanshuang, Huang, Feng

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Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer von He, Gang, Gao, Juan, Chen, Hanshuang, Cui, Jingbiao, Sun, Zhaoqi, Chen, Xiaoshuang

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Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation von He, Gang, Liu, Jiangwei, Chen, Hanshuang, Liu, Yanmei, Sun, Zhaoqi, Chen, Xiaoshuang, Liu, Mao, Zhang, Lide

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Quenched mean-field theory for the majority-vote model on complex networks von Huang, Feng, Chen, Hanshuang, Shen, Chuansheng

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Spontaneous symmetry breaking and discontinuous phase transition for spreading dynamics in multiplex networks von An, Ningbo, Chen, Hanshuang, Ma, Chuang, Zhang, Haifeng

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Large deviation induced phase switch in an inertial majority-vote model von Chen, Hanshuang, Shen, Chuansheng, Zhang, Haifeng, Kurths, Jürgen

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Phase transitions in a multistate majority-vote model on complex networks von Chen, Hanshuang, Li, Guofeng

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Hybrid multiscale coarse-graining for dynamics on complex networks von Shen, Chuansheng, Chen, Hanshuang, Hou, Zhonghuai, Kurths, Jürgen

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Mobility and density induced amplitude death in metapopulation networks of coupled oscillators von Shen, Chuansheng, Chen, Hanshuang, Hou, Zhonghuai

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Extremal statistics for a one-dimensional Brownian motion with a reflective boundary von Huang, Feng, Chen, Hanshuang

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Explosive synchronization transitions in complex neural networks von Chen, Hanshuang, He, Gang, Huang, Feng, Shen, Chuansheng, Hou, Zhonghuai

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Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation von Gao, Juan, He, Gang, Sun, Zhaoqi, Chen, Hanshuang, Zheng, Changyong, Jin, Peng, Xiao, Dongqi, Liu, Mao

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Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks von He, Gang, Deng, Bin, Chen, Hanshuang, Chen, Xiaoshuang, Lv, Jianguo, Ma, Yongqing, Sun, Zhaoqi

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Breakdown of arcsine law for resetting brownian motion von Yan, Hao, Chen, Hanshuang

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Extreme value statistics of first-passage trajectories of resetting Brownian motion in an interval von Huang, Feng, Chen, Hanshuang

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Random walks on complex networks under node-dependent stochastic resetting von Ye, Yanfei, Chen, Hanshuang

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Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing von He, Gang, Zhang, Jiwen, Sun, Zhaoqi, Lv, Jianguo, Chen, Hanshuang, Liu, Mao

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Random walks on complex networks with first-passage resetting von Huang, Feng, Chen, Hanshuang

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First passage of a diffusing particle under stochastic resetting in bounded domains with spherical symmetry von Chen, Hanshuang, Huang, Feng

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Non-equilibrium random walks on multiplex networks von Huang, Feng, Chen, Hanshuang

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