Development of dislocation-free ion-doped silicon layers von Plebanovich, V. I., Belous, A. I., Chelyadinskiĭ, A. R., Odzhaev, V. B.

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Interaction between antimony atoms and micropores in silicon von Odzhaev, V. B., Petlitskii, A. N., Plebanovich, V. I., Sadovskii, P. K., Tarasik, M. I., Chelyadinskii, A. R.

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Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions von Chelyadinskii, A. R., Varichenko, V. S., Zaitsev, A. M.

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Model of the pair phosphorus atom-interstitial silicon atom von Chelyadinskii, A. R., Burenkov, V. A.

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Defect-impurity engineering in implanted silicon von Chelyadinskii, Aleksei R, Komarov, Fadei F

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Efficiency of formation of radiation defects in silicon upon implantation of silicon and phosphorus ions von Jadan, M., Chelyadinskii, A.R., Yavid, V.Yu

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Diffusion of ion-implanted phosphorus in silicon von Chelyadinskii, A. R., Taher, H. I. Haki

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Localization of carbon atoms and extended defects in silicon implanted separately with C+ and B+ ions and jointly with C+ and B+ ions von Jadan, M., Chelyadinskii, A. R., Odzhaev, V. B.

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Getter formation in silicon by implantation of antimony ions von Sadovskii, P. K., Chelyadinskii, A. R., Odzhaev, V. B., Tarasik, M. I., Turtsevich, A. S., Vasiliev, Yu. B.

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Influence of radiation defects on diffusion of arsenic and antimony in implanted silicon von Jadan, M., Chelyadinskii, A. R., Yavid, V. Yu

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Defect production in silicon irradiated with 5.68 GeV Xe ions von Varichenko, V.S., Zaitsev, A.M., Kazutchits, N.M., Chelyadinskii, A.R., Penina, N.M., Martinovich, V.A., Latushko, Ya.I., Fahrner, W.R.

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Charge states of interstitial defects in implanted silicon and their annealing temperatures von JADAN, M, BEREZHNOV, N. I, CHELYADINSKII, A. R

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Model of High-Temperature Diffusion of Interstitial Silicon Atoms in Silicon von Jadan, M., Chelyadins, A.R., Yavid, V.Yu

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Damage Profiles in Ion Implanted Silicon von Tkachev, V. D., Hölzer, G., Chelyadinskii, A. R.

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EPR, XRD and optical reflectivity studies of radiation damage in silicon after high energy implantation of Ni ions von Varichenko, V.S., Zaitsev, A.M., Lindner, J.K.N., Domres, R., Penina, N.M., Erchak, D.P., Chelyadinskii, A.R., Martinovitsh, V.A.

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On the problem of Watkins substitution and migration of silicon atoms in silicon von Berezhnov, N.I., Chelyadinskii, A.R., Jadan, M., Suprun-Belevich, Yu.R.

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Diffusion of Boron Implanted into Silicon von Stelmakh, V. F., Suprun-Belevich, Yu. R., Tkachev, V. D., Chelyadinskii, A. R.

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Improved multistep method of ion implantation into silicon for IC manufacture von Plebanovich, V. I., Chelyadinskii, A. R., Vasil’ev, Yu. B., Gladchuk, A. I., Osipov, V. E.

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Radiation defects and electrical properties of silicon layers containing Sb and As implanted with Si + ions von Araika, O.J., Chelyadinskii, A.R., Dravin, V.A., Suprun-Belevich, Yu.R., Tolstikh, V.P.

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Diffusion of implanted nickel in diamond von Filipp, A.R., Tkachev, V.V., Varichenko, V.S., Zaitsev, A.M., Chelyadinskii, A.R., Kluev, Yu.A.

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