On the Design Principles of 3-D RESURF-Enhanced RF SOI LDMOSFETs: Gate Geometry Optimization and Rescaling von Chee, Augustus K. W.

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Principles of High-Resolution Dopant Profiling in the Scanning Helium Ion Microscope, Image Widths, and Surface Band Bending von Chee, Augustus K. W.

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Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning von Chee, Augustus K. W.

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The Mechanistic Determination of Doping Contrast from Fermi Level Pinned Surfaces in the Scanning Electron Microscope Using Energy-Filtered Imaging and Calculated Potential Distrib... von Chee, Augustus K.W.

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Unravelling new principles of site-selective doping contrast in the dual-beam focused ion beam/scanning electron microscope von Chee, Augustus K.W.

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Fermi level pinning characterisation on ammonium fluoride-treated surfaces of silicon by energy-filtered doping contrast in the scanning electron microscope von Chee, Augustus K. W.

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A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations von Chee, Augustus K. W., Broom, Ronald F., Humphreys, Colin J., Bosch, Eric G. T.

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Dopant profiling based on scanning electron and helium ion microscopy von Chee, Augustus K.W., Boden, Stuart A.

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Quantitative Dopant Profiling by Energy Filtering in the Scanning Electron Microscope von Chee, Augustus K. W.

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