Piezoelectric Sensors Operating at Very High Temperatures and in Extreme Environments Made of Flexible Ultrawide‐Bandgap Single‐Crystalline AlN Thin Films von Kim, Nam‐In, Yarali, Miad, Moradnia, Mina, Aqib, Muhammad, Liao, Che‐Hao, AlQatari, Feras, Nong, Mingtao, Li, Xiaohang, Ryou, Jae‐Hyun

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Flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates von Tang, Xiao, Lu, Yi, Lin, Rongyu, Liao, Che-Hao, Zhao, Yue, Li, Kuang-Hui, Xiao, Na, Cao, Haicheng, Babatain, Wedyan, Li, Xiaohang

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Demonstration of single-phase wurtzite BAlN with over 20% boron content by metalorganic chemical vapor deposition von Tran, Tinh Binh, Liao, Che-Hao, AlQatari, Feras, Li, Xiaohang

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Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation von Dai, Yijun, Guo, Wei, Chen, Li, Xu, Houqiang, AlQatari, Feras, Guo, Chenyu, Peng, Xianchun, Tang, Ke, Liao, Che-Hao, Li, Xiaohang, Ye, Jichun

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Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD von Nong, Mingtao, Liao, Che-Hao, Tang, Xiao, Cao, Haicheng, Liu, Tingang, Cortez, Patsy A. Miranda, Chettri, Dhanu, García, Glen Isaac Maciel, Li, Xiaohang

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Demonstration of MOCVD-grown BGaN with over 10% boron composition von AlQatari, Feras, Liao, Che-Hao, Li, Xiaohang

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Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-porphyrin based organic molecules von Garg, Manjari, Naik, Tejas Rajendra, Pathak, Ravi, Rao, Valipe Ramgopal, Liao, Che-Hao, Li, Kuang-Hui, Sun, Haiding, Li, Xiaohang, Singh, Rajendra

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Nanoscale compositional analysis of wurtzite BAlN thin film using atom probe tomography von Sarker, Jith, Tran, Tinh Binh, AlQatari, Feras, Liao, Che-Hao, Li, Xiaohang, Mazumder, Baishakhi

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Epitaxial growth of β-Ga2O3 (−201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations von Tang, Xiao, Kuang-Hui, Li, Che-Hao Liao, Zheng, Dongxing, Liu, Chen, Lin, Rongyu, Xiao, Na, Krishna, Shibin, Tauboada, Jose, Li, Xiaohang

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III-Nitride Deep UV LED Without Electron Blocking Layer von Ren, Zhongjie, Lu, Yi, Yao, Hsin-Hung, Sun, Haiding, Liao, Che-Hao, Dai, Jiangnan, Chen, Changqing, Ryou, Jae-Hyun, Yan, Jianchang, Wang, Junxi, Li, Jinmin, Li, Xiaohang

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Reflective metalens with an enhanced off-axis focusing performance von Alnakhli, Zahrah, Lin, Ronghui, Liao, Che-Hao, Labban, Abdulrahman El, Li, Xiaohang

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Reduction in the efficiency droop effect of a light-emitting diode through surface plasmon coupling von Lu, Chih-Feng, Liao, Che-Hao, Chen, Chih-Yen, Hsieh, Chieh, Kiang, Yean-Woei, Yang, C. C.

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Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array von Tu, Charng-Gan, Liao, Che-Hao, Yao, Yu-Feng, Chen, Horng-Shyang, Lin, Chun-Han, Su, Chia-Ying, Shih, Pei-Ying, Chen, Wei-Han, Zhu, Erwin, Kiang, Yean-Woei, Yang, C C

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Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures von Sun, Haiding, Wu, Feng, Park, Young Jae, Al tahtamouni, T. M., Liao, Che-Hao, Guo, Wenzhe, Alfaraj, Nasir, Li, Kuang-Hui, Anjum, Dalaver H., Detchprohm, Theeradetch, Dupuis, Russell D., Li, Xiaohang

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Wide range tunable bandgap and composition β-phase (AlGa)2O3 thin film by thermal annealing von Liao, Che-Hao, Li, Kuang-Hui, Torres-Castanedo, Carlos G., Zhang, Guozheng, Li, Xiaohang

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Chemical solution deposition of epitaxial indium- and aluminum-doped Ga2O3 thin films on sapphire with tunable bandgaps von Tang, Xiao, Li, Kuang-Hui, Liao, Che-Hao, Taboada Vasquez, Jose Manuel, Wang, Chuanju, Xiao, Na, Li, Xiaohang

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Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays von Liao, Che-Hao, Chang, Wen-Ming, Yao, Yu-Feng, Chen, Hao-Tsung, Su, Chia-Ying, Chen, Chih-Yen, Hsieh, Chieh, Chen, Horng-Shyang, Tu, Charng-Gan, Kiang, Yean-Woei, Yang, C. C., Hsu, Ta-Cheng

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Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization von Garg, Manjari, Kumar, Ashutosh, Sun, Haiding, Liao, Che-Hao, Li, Xiaohang, Singh, Rajendra

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Localized surface plasmon resonance-enhanced solar-blind Al0.4Ga0.6N MSM photodetectors exhibiting high-temperature robustness von Kaushik, Shuchi, Karmakar, Subhajit, Bisht, Prashant, Liao, Che-Hao, Li, Xiaohang, Varshney, Ravendra Kumar, Mehta, Bodh Raj, Singh, Rajendra

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Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors von Tang, Xiao, Li, Kuang-Hui, Zhao, Yue, Sui, Yanxin, Liang, Huili, Liu, Zeng, Liao, Che-Hao, Babatain, Wedyan, Lin, Rongyu, Wang, Chuanju, Lu, Yi, Alqatari, Feras S, Mei, Zengxia, Tang, Weihua, Li, Xiaohang

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