Physical model of the contact resistivity of metal-graphene junctions von Chaves, Ferney A., Jiménez, David, Cummings, Aron W., Roche, Stephan

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2D pn junctions driven out-of-equilibrium von Chaves, Ferney A, Feijoo, Pedro C, Jiménez, David

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Electrostatics of two-dimensional lateral junctions von Chaves, Ferney A, Jiménez, David

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Tunable Graphene-GaSe Dual Heterojunction Device von Kim, Wonjae, Li, Changfeng, Chaves, Ferney A., Jiménez, David, Rodriguez, Raul D., Susoma, Jannatul, Fenner, Matthias A., Lipsanen, Harri, Riikonen, Juha

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The gate tunable 2D pn junction driven out-of-equilibrium von Chaves, Ferney A., Jiménez, David

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Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors von Pasadas, Francisco, Feijoo, Pedro C., Mavredakis, Nikolaos, Pacheco‐Sanchez, Aníbal, Chaves, Ferney A., Jiménez, David

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Gate Tunable Lateral 2D pn Junctions: An Analytical Study of Its Electrostatics von Chaves, Ferney A., Pacheco-Sanchez, Anibal, Jimenez, David

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The Role of the Fermi Level Pinning in Gate Tunable Graphene-Semiconductor Junctions von Chaves, Ferney A., Jimenez, David

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Electrostatics of metal-graphene interfaces: sharp p-n junctions for electron-optical applications von Chaves, Ferney A, Jiménez, David, Santos, Jaime E, Bøggild, Peter, Caridad, José M

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A physics-based model of gate-tunable metal-graphene contact resistance benchmarked against experimental data von Chaves, Ferney A, Jiménez, David, Sagade, Abhay A, Kim, Wonjae, Riikonen, Juha, Lipsanen, Harri, Neumaier, Daniel

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Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices von Kim, Wonjae, Arpiainen, Sanna, Xue, Hui, Soikkeli, Miika, Qi, Mei, Sun, Zhipei, Lipsanen, Harri, Chaves, Ferney A, Jiménez, David, Prunnila, Mika

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Tunable Graphene–GaSe Dual Heterojunction Device von Kim, Wonjae, Li, Changfeng, Chaves, Ferney A., Jiménez, David, Rodriguez, Raul D., Susoma, Jannatul, Fenner, Matthias A., Lipsanen, Harri, Riikonen, Juha

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Compact charge and capacitance modeling of undoped ultra-thin body (UTB) SOI MOSFETs von Moldovan, Oana, Chaves, Ferney A., Jiménez, David, Iñiguez, Benjamin

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Accurate Calculation of Gate Tunneling Current in Double-Gate and Single-Gate SOI MOSFETs Through Gate Dielectric Stacks von Chaves, F. A., Jimenez, D., Garcia Ruiz, Francisco J., Godoy, A., Sune, J.

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Accurate prediction of the volume inversion impact on undoped Double Gate MOSFET capacitances von Moldovan, Oana, Chaves, Ferney A., Jiménez, David, Raskin, Jean-Pierre, Iñiguez, Benjamin

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Explicit Analytical Charge and Capacitance Models of Undoped Double-Gate MOSFETs von Moldovan, O., Jimenez, D., Guitart, J.R., Chaves, F.A., Iniguez, B.

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The gate tunable 2D pn junction driven out-of-equilibrium von Chaves, Ferney A, Jiménez, David

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Gate Tunable Lateral 2D pn Junctions: An Analytical Study of Its Electrostatics von Chaves, Ferney A, Pacheco-Sanchez, Anibal, Jimenez, David

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Electrostatics of Two-Dimensional Lateral Junctions von Chaves, Ferney A, Jiménez, David

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Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors von Pasadas, Francisco, Feijoo, Pedro C, Mavredakis, Nikolaos, Pacheco-Sanchez, Aníbal, Chaves, Ferney A, Jiménez, David

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