Perspectives and opportunities with multisubband plasmonics von Montes Bajo, M., Chauveau, J.-M., Vasanelli, A., Delteil, A., Todorov, Y., Sirtori, C., Hierro, A.

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Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions von Le Biavan, N., Hugues, M., Montes Bajo, M., Tamayo-Arriola, J., Jollivet, A., Lefebvre, D., Cordier, Y., Vinter, B., Julien, F.-H., Hierro, A., Chauveau, J.-M.

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Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells von Jollivet, A., Hinkov, B., Pirotta, S., Hoang, H., Derelle, S., Jaeck, J., Tchernycheva, M., Colombelli, R., Bousseksou, A., Hugues, M., Le Biavan, N., Tamayo-Arriola, J., Montes Bajo, M., Rigutti, L., Hierro, A., Strasser, G., Chauveau, J.-M., Julien, F. H.

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Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a -plane ZnO substrates von Chauveau, J.-M., Teisseire, M., Kim-Chauveau, H., Deparis, C., Morhain, C., Vinter, B.

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Use of interface phonon-polaritons for the alloy determination in ZnO/(Zn,Mg)O multiple quantum wells von Montes Bajo, M., Tamayo-Arriola, J., Le Biavan, N., Martínez Castellano, E., Lefebvre, D., Hugues, M., Chauveau, J.-M., Hierro, A.

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Transport of indirect excitons in ZnO quantum wells von Kuznetsova, Y Y, Fedichkin, F, Andreakou, P, Calman, E V, Butov, L V, Lefebvre, P, Bretagnon, T, Guillet, T, Vladimirova, M, Morhain, C, Chauveau, J-M

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Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells von Tabares, G., Hierro, A., Vinter, B., Chauveau, J.-M.

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Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography von Di Russo, E, Moyon, F, Gogneau, N, Largeau, L, Giraud, E, Carlin, J.-F, Grandjean, N, Chauveau, J. M, Hugues, M, Blum, I, Lefebvre, W, Vurpillot, F, Blavette, D, Rigutti, L

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Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO von Neumann, M. D., Esser, N., Chauveau, J.-M., Goldhahn, R., Feneberg, M.

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Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy von Cordier, Y., Moreno, J.-C., Baron, N., Frayssinet, E., Chauveau, J.-M., Nemoz, M., Chenot, S., Damilano, B., Semond, F.

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Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy von Xia, Y., Brault, J., Vennéguès, P., Nemoz, M., Teisseire, M., Leroux, M., Chauveau, J.-M.

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The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates von KIM-CHAUVEAU, H, DE MIERRY, P, CHAUVEAU, J.-M, DUBOZ, J.-Y

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Residual and nitrogen doping of homoepitaxial nonpolar m -plane ZnO films grown by molecular beam epitaxy von Taïnoff, D., Al-Khalfioui, M., Deparis, C., Vinter, B., Teisseire, M., Morhain, C., Chauveau, J.-M.

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Low temperature reflectivity study of nonpolar ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates von Béaur, L., Bretagnon, T., Brimont, C., Guillet, T., Gil, B., Tainoff, D., Teisseire, M., Chauveau, J.-M.

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Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wells von Chauveau, J.-M., Teisseire, M., Kim-Chauveau, H., Morhain, C., Deparis, C., Vinter, B.

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Light polarization sensitive photodetectors with m- and r-plane homoepitaxial ZnO/ZnMgO quantum wells von Tabares, G., Hierro, A., Lopez-Ponce, M., Muñoz, E., Vinter, B., Chauveau, J.-M.

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On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates von Vennéguès, P., Chauveau, J. M., Bougrioua, Z., Zhu, T., Martin, D., Grandjean, N.

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Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents von Redondo-Cubero, A, Hierro, A, Chauveau, J.-M, Lorenz, K, Tabares, G, Franco, N, Alves, E, Muoz, E

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Built-in electric field in ZnO based semipolar quantum wells grown on (101¯2) ZnO substrates von Chauveau, J.-M., Xia, Y., Ben Taazaet-Belgacem, I., Teisseire, M., Roland, B., Nemoz, M., Brault, J., Damilano, B., Leroux, M., Vinter, B.

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Interface structure and anisotropic strain relaxation of nonpolar wurtzite ( 11 2 ¯ 0 ) and ( 10 1 ¯ 0 ) orientations: ZnO epilayers grown on sapphire von Chauveau, J.-M., Vennéguès, P., Laügt, M., Deparis, C., Zuniga-Perez, J., Morhain, C.

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