Optimized 750V SiC MOSFETs for Electric Vehicle Inverter Operation von Bui-Quang, Phong, Ding, Yu, Salemi, Arash, Sheridan, David, Liu, Alvin, Zhu, Bob, Chatty, Kiran

Volltext

Reliability aspects of gate oxide under ESD pulse stress von Ille, Adrien, Stadler, Wolfgang, Pompl, Thomas, Gossner, Harald, Brodbeck, Tilo, Esmark, Kai, Riess, Philipp, Alvarez, David, Chatty, Kiran, Gauthier, Robert, Bravaix, Alain

Volltext

Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers von Matocha, Kevin, Chatty, Kiran, Banerjee, Sujit

Volltext

Study of Design Factors Affecting Turn-on Time of Silicon Controlled Rectifiers (SCRS) in 90 and 65nm Bulk CMOS Technologies von Di Sarro, James, Chatty, Kiran, Gauthier, Robert, Rosenbaum, Elyse

Volltext

Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technology von Alvarez, David, Chatty, Kiran, Russ, Christian, Abou-Khalil, Michel J., Li, Junjun, Gauthier, Robert, Esmark, Kai, Halbach, Ralph, Seguin, Christopher

Volltext

Comparative Study on the Repetitive Unclamped-Inductive-Switching Capability(R-UIS) of 1200V 160mOhm SiC Planar Gate MOSFETs von Chowdhury, Sauvik, Ji, In Hwan, Powell, Blake, Chatty, Kiran, Matocha, Kevin, Banerjee, Sujit

Volltext

Characterization of high-k/metal gate stack breakdown in the time scale of ESD events von Yang Yang, Di Sarro, J, Gauthier, R J, Chatty, K, Junjun Li, Mishra, R, Mitra, S, Ioannou, D E

Volltext

1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation von Rowland, Larry B., Matocha, Kevin, Chatty, Kiran, Banerjee, Sujit

Volltext

1700V, 5.5mohm-cm super(2) 4H-SiC DMOSFET with Stable 225[degrees]C Operation von Matocha, Kevin, Chatty, Kiran, Banerjee, Sujit, Rowland, Larry B

Volltext

900V, 1.46mOhm-cm2 4H-SiC Depletion Mode Vertical JFET von Casady, Jeffrey B., Sheridan, David C., Chatty, Kiran, Bondarenko, Volodymyr, Schrader, Robin

Volltext

900V, 1.46mOhm-cm super(2) 4H-SiC Depletion Mode Vertical JFET von Chatty, Kiran, Sheridan, David C, Bondarenko, Volodymyr, Schrader, Robin, Casady, Jeffrey B

Volltext

Recent Advances in VJFETs at SemiSouth von Chatty, Kiran, Sheridan, David C., Bondarenko, Vladomyr, Schrader, Robin, Speer, Kevin, Casady, Jeffrey B.

Volltext

Demonstration of SiC Vertical Trench JFET Reliability von Speer, Kevin M., Bondarenko, Volodymyr, Casady, Jeff B., Sheridan, David C., Matocha, Kevin, Chatty, Kiran

Volltext

Reverse conduction properties of vertical SiC trench JFETs von Sheridan, D. C., Chatty, K., Bondarenko, V., Casady, J. B.

Volltext

Reliability aspects of gate oxide under ESD pulse stress von Ille, A., Stadler, W., Pompl, T., Gossner, H., Brodbeck, T., Esmark, K., Riess, P., Alvarez, D., Chatty, K., Gauthier, R., Bravaix, A.

Volltext

HIGH VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF MAKING THE DEVICES von BANERJEE, Sujit, MATOCHA, Kevin, CHATTY, Kiran

Volltext bestellen

HIGH VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF MAKING THE DEVICES von BANERJEE, Sujit, MATOCHA, Kevin, CHATTY, Kiran

Volltext bestellen

HIGH VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF MAKING THE DEVICES von BANERJEE, Sujit, MATOCHA, Kevin, CHATTY, Kiran

Volltext bestellen

Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies von Di Sarro, J., Chatty, K., Gauthier, R., Rosenbaum, E.

Volltext

Implementation of diode and bipolar triggered SCRs for CDM robust ESD protection in 90 nm CMOS ASICs von Brennan, Ciaran J., Chang, Shunhua, Woo, Min, Chatty, Kiran, Gauthier, Robert

Volltext