Simulation of ESD protection devices in an advanced CMOS technology using a TCAD workbench based on an ESD calibration methodology von Cilento, T., Schenkel, M., Yun, C., Mishra, R., Li, J., Chatty, K., Gauthier, R.

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A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration von Minixhofer, R, Feilchenfeld, N, Knaipp, M, Röhrer, G, Park, J M, Zierak, M, Enichlmair, H, Levy, M, Loeffler, B, Hershberger, D, Unterleitner, F, Gautsch, M, Chatty, K, Shi, Y, Posch, W, Seebacher, E, Schrems, M, Dunn, J, Harame, D

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Hysteresis in transfer characteristics in 4H-SiC depletion/accumulation-mode MOSFETs von Chatty, K., Banerjee, S., Chow, T.P., Gutmann, R.J.

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Improved high-voltage lateral RESURF MOSFETs in 4H-SiC von Banerjee, S., Chatty, K., Chow, T.P., Gutmann, R.J.

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Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant von Alvarez, D., Abou-Khalil, M.J., Russ, C., Chatty, K., Gauthier, R., Kontos, D., Li, J., Seguin, C., Halbach, R.

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High-voltage lateral RESURF MOSFETs on 4H-SiC von Chatty, K., Banerjee, S., Chow, T.P., Gutmann, R.J.

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Accumulation-layer electron mobility in n-channel 4H-SiC MOSFETs von Chatty, K., Chow, T.P., Gutmann, R.J., Arnold, E., Alok, D.

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Study of factors limiting ESD diode performance in 90nm CMOS technologies and beyond von Chatty, K., Gauthier, R., Putnam, C., Muhammad, M., Woo, M., Li, J., Halbach, R., Seguin, C.

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Comparative hall measurements on wet- and dry-oxidized 4H-SiC MOSFETs von Chatty, K, Chow, T P, Gutmann, R J, Arnold, E, Alok, D

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Interaction between electrostatic discharge and electromigration on copper interconnects for advanced CMOS technologies von Kontos, D.K., Gauthier, R., Ioannou, D.E., Lee, T., Min Woo, Chatty, K., Putnam, C., Muhammad, M.

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Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs von Chow, T. Paul, Chatty, K., Banerjee, S., Gutmann, Ronald J.

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Effect of processing conditions on inversion layer mobility and interface state density in 4H-SiC MOSFETs von BANERJEE, S, CHATTY, K, CHOW, T. P, GUTMANN, R. J

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Reverse conduction properties of vertical SiC trench JFETs von Sheridan, D. C., Chatty, K., Bondarenko, V., Casady, J. B.

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Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs von Chow, T. Paul, Chatty, K., Banerjee, S., Arnold, Emil, Gutmann, Ronald J., Alok, Dev

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Re-oxidation characteristics of oxynitrides on 3C- and 4H-SiC von Chatty, K., Khemka, V., Chow, T. P., Gutmann, R. J.

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Design and Implementation of RESURF MOSFETs in 4H-SiC von Chow, T. Paul, Banerjee, S., Chatty, K., Gutmann, Ronald J.

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Reliability aspects of gate oxide under ESD pulse stress von Ille, A., Stadler, W., Pompl, T., Gossner, H., Brodbeck, T., Esmark, K., Riess, P., Alvarez, D., Chatty, K., Gauthier, R., Bravaix, A.

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Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers von Khemka, V., Chow, T. Paul, Chatty, K., Gutmann, Ronald J.

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Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant von Khemka, V., Chow, T. Paul, Chatty, K., Gutmann, Ronald J.

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Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies von Di Sarro, J., Chatty, K., Gauthier, R., Rosenbaum, E.

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