A 64-b microprocessor with multimedia support von Lev, L.A., Charnas, A., Tremblay, M., Dalal, A.R., Frederick, B.A., Srivatsa, C.R., Greenhill, D., Wendell, D.L., Duy Dinh Pham, Anderson, E., Hingarh, H.I., Razzack, I., Kaku, J.M., Shin, K., Levitt, M.E., Allen, M., Ferolito, P.A., Bartolotti, R.I., Yu, R.K., Melanson, R.J., Shah, S.I., Nguyen, S., Mitra, S.S., Reddy, V., Ganesan, V., de Lange, W.J.

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High-Fat Programming of Hyperglycemia, Hyperinsulinemia, Insulin Resistance, Hyperleptinemia, and Altered Islet Architecture in 3-Month-Old Wistar Rats von Cerf, Marlon E., Chapman, Charna S., Louw, Johan

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A 330 MHz 4-way superscalar microprocessor von Greenhill, D., Anderson, E., Bauman, J., Charnas, A., Cheerla, R., Hao Chen, Doreswamy, M., Ferolito, P., Gopaladhine, S., Ho, K., Wenjay Hsu, Kongetira, P., Melanson, R., Reddy, V., Salem, R., Sathianathan, H., Shah, S., Shin, K., Srivatsa, C., Weisenbach, R.

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Process for producing 1,2-dialkoxy-3-fluorobenzene von Qiu, Mingjian, Zhang, Wei, Chen, Zhaohui, Zhang, Chunshan, Zhang, Yali

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A 64 b microprocessor with multimedia support von Chamas, A., Dalal, A., deDood, P., Ferolito, P., Frederick, B., Geva, O., Greenhill, D., Hingarh, H., Kaku, J., Kohn, L., Lev, L., Levitt, M., Melanson, R., Mitra, S., Sundar, R., Tamjidi, M., Wang, P., Wendell, D., Yu, R., Zyner, G.

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Pharmaceutical formulation for nasal administration von Ma, Xin Fang

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Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors von Si, Mengwei, Hu, Yaoqiao, Lin, Zehao, Sun, Xing, Charnas, Adam, Zheng, Dongqi, Lyu, Xiao, Wang, Haiyan, Cho, Kyeongjae, Ye, Peide D.

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Filling a void by developing the next generation of toxicology experts von Fritz, Scott, Charnas, Savannah, Ensley, Steve

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Atomically thin In2O3 field-effect transistors with 10(17) current on/off ratio von Charnas, Adam, Lin, Zehao, Zhang, Zhuocheng, Ye, Peide D.

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Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V von Si, Mengwei, Lin, Zehao, Charnas, Adam, Ye, Peide D.

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Enhancement-Mode Atomic-Layer-Deposited In2O3 Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen En... von Si, Mengwei, Charnas, Adam, Lin, Zehao, Ye, Peide D.

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Enhancement of Thermal Transfer From β-Ga2O3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer von Noh, Jinhyun, Chowdhury, Prabudhya Roy, Segovia, Mauricio, Alajlouni, Sami, Si, Mengwei, Charnas, Adam R., Huang, Shouyuan, Maize, Kerry, Shakouri, Ali, Xu, Xianfan, Ruan, Xiulin, Ye, Peide D.

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First Experimental Demonstration of Robust HZO/β-Ga₂O₃ Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High-Temperature Env... von Noh, Jinhyun, Bae, Hagyoul, Li, Junkang, Luo, Yandong, Qu, Yiming, Park, Tae Joon, Si, Mengwei, Chen, Xuegang, Charnas, Adam R., Chung, Wonil, Peng, Xiaochen, Ramanathan, Shriram, Yu, Shimeng, Ye, Peide D.

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Cerebral X-linked adrenoleukodystrophy: the international hematopoietic cell transplantation experience from 1982 to 1999 von Peters, Charles, Charnas, Lawrence R., Tan, Ye, Ziegler, Richard S., Shapiro, Elsa G., DeFor, Todd, Grewal, Satkiran S., Orchard, Paul J., Abel, Susan L., Goldman, Anne I., Ramsay, Norma K.C., Dusenbery, Kathryn E., Loes, Daniel J., Lockman, Lawrence A., Kato, Shunichi, Aubourg, Patrick R., Moser, Hugo W., Krivit, William

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Improved Stability With Atomic-Layer-Deposited Encapsulation on Atomic-Layer In 2 O 3 Transistors by Reliability Characterization von Charnas, Adam, Si, Mengwei, Lin, Zehao, Ye, Peide D.

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Molecular and behavioral toxicity assessment of tiafenacil, a novel PPO-inhibiting herbicide, in zebrafish embryos/larvae von Ivantsova, Emma, Konig, Isaac, Lopez-Scarim, Victoria, English, Cole, Charnas, Savannah R., Souders, Christopher L., Martyniuk, Christopher J.

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Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications von Qin, Jingkai, Qiu, Gang, Jian, Jie, Zhou, Hong, Yang, Lingming, Charnas, Adam, Zemlyanov, Dmitry Y, Xu, Cheng-Yan, Xu, Xianfan, Wu, Wenzhuo, Wang, Haiyan, Ye, Peide D

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Atomically thin In2O3 field-effect transistors with 1017 current on/off ratio von Charnas, Adam, Lin, Zehao, Zhang, Zhuocheng, Ye, Peide D.

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Improved Stability With Atomic-Layer-Deposited Encapsulation on Atomic-Layer In2O3 Transistors by Reliability Characterization von Charnas, Adam, Si, Mengwei, Lin, Zehao, Ye, Peide D.

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Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition von Zhang, Jie, Zheng, Dongqi, Zhang, Zhuocheng, Charnas, Adam, Lin, Zehao, Ye, Peide D.

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