High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices von Wang, C. A., Choi, H. K., Ransom, S. L., Charache, G. W., Danielson, L. R., DePoy, D. M.

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InGaAsSb thermophotovoltaic diode: Physics evaluation von Charache, G. W., Baldasaro, P. F., Danielson, L. R., DePoy, D. M., Freeman, M. J., Wang, C. A., Choi, H. K., Garbuzov, D. Z., Martinelli, R. U., Khalfin, V., Saroop, S., Borrego, J. M., Gutmann, R. J.

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Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor-phase epitaxy von Wang, C.A., Choi, H.K., Oakley, D.C., Charache, G.W.

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Optical constants of Ga1−xInxAsySb1−y lattice matched to GaSb (001): Experiment and modeling von Muñoz, M., Wei, K., Pollak, Fred H., Freeouf, J. L., Wang, C. A., Charache, G. W.

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Spectral ellipsometry of GaSb: Experiment and modeling von Muñoz, M., Wei, K., Pollak, Fred H., Freeouf, J. L., Charache, G. W.

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Moss–Burstein and plasma reflection characteristics of heavily doped n -type InxGa1−xAs and InPyAs1−y von Charache, G. W., DePoy, D. M., Raynolds, J. E., Baldasaro, P. F., Miyano, K. E., Holden, T., Pollak, F. H., Sharps, P. R., Timmons, M. L., Geller, C. B., Mannstadt, W., Asahi, R., Freeman, A. J., Wolf, W.

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Ternary and quaternary antimonide devices for thermophotovoltaic applications von Hitchcock, C.W, Gutmann, R.J, Ehsani, H, Bhat, I.B, Wang, C.A, Freeman, M.J, Charache, G.W

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Infrared materials for thermophotovoltaic applications von CHARACHE, G. W, EGLEY, J. L, CHOI, H. K, TURNER, G. W, WOJTCZUK, S. J, COLTER, P, SHARPS, P, TIMMONS, M, FAHEY, R. E, ZHANG, K, DEPOY, D. M, DANIELSON, L. R, FREEMAN, M. J, DZIENDZIEL, R. J, MOYNIHAN, J. F, BALDASARO, P. F, CAMPBELL, B. C, WANG, C. A

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Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs von Baldasaro, P. F., Raynolds, J. E., Charache, G. W., DePoy, D. M., Ballinger, C. T., Donovan, T., Borrego, J. M.

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Comparison of facet temperature and degradation of unpumped and passivated facets of Al-free 940-nm lasers using photoluminescence von Chavan, A., Radionova, R., Charache, G.W., Menna, R.J., Schluter, H., Hostetler, J.L.

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Antimonide-based devices for thermophotovoltaic applications von Hitchcock, C.W., Gutmann, R.J., Borrego, J.M., Bhat, I.B., Charache, G.W.

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High-performance GaInAsSb thermophotovoltaic devices with an AlGaAsSb window von Choi, H. K., Wang, C. A., Turner, G. W., Manfra, M. J., Spears, D. L., Charache, G. W., Danielson, L. R., Depoy, D. M.

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Lateral diffusion of sodium from peripheral sources in metal oxide semiconductor transistors von CHARACHE, G. W, MABY, E. W, DAUBENSPECK, T, BAKEMAN, P

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Photon recycling and recombination processes in 0.53 eV p -type InGaAsSb von Borrego, J. M., Saroop, S., Gutmann, R. J., Charache, G. W., Donovan, T., Baldasaro, P. F., Wang, C. A.

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Surface passivation of GaAs MESFETs von Charache, G.W., Akram, S., Maby, E.W., Bhat, I.B.

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Complex impedance spectroscopy for metal-semiconductor field-effect-transistor surface characterization von Charache, G. W., Maby, E. W.

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Recent progress in InGaAsSb/GaSb TPV devices von Shellenbarger, Z.A., Mauk, M.G., DiNetta, L.C., Charache, G.W.

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Current status of low-temperature radiator thermophotovoltaic devices von Charache, G.W., Egley, J.L., Danielson, L.R., DePoy, D.M., Baldasaro, P.F., Campbell, B.C., Hui, S., Fraas, L.M., Wojtczuk, S.J.

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Thermophotovoltaics-development status and parametric considerations for power applications von Black, R.E., Baldasaro, P.F., Charache, G.W.

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Recombination processes in doubly capped antimonide-based quaternary thin films von Saroop, Sudesh, Borrego, Jose M., Gutmann, Ronald J., Charache, Greg W., Wang, Christine A.

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