Fermi level pinning and band bending in δ-doped BaSnO3 von Kim, Youjung, Cho, Hyeongmin, Char, Kookrin

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High mobility BaSnO3 films and field effect transistors on non-perovskite MgO substrate von Shin, Juyeon, Kim, Young Mo, Kim, Youjung, Park, Chulkwon, Char, Kookrin

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Photoconductivity of transparent perovskite semiconductor BaSnO3 and SrTiO3 epitaxial thin films von Park, Jisung, Kim, Useong, Char, Kookrin

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Thin film transistors based on ultra-wide bandgap spinel ZnGa2O4 von Jang, Yeaju, Hong, Seongyun, Seo, Jihoon, Cho, Hyeongmin, Char, Kookrin, Galazka, Zbigniew

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Low resistance epitaxial edge contacts to buried nanometer thick conductive layers of BaSnO3 von Lee, Jaehyeok, Cho, Hyeongmin, Kim, Bongju, Jeong, Myoungho, Lee, Kiyoung, Char, Kookrin

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High mobility field effect transistor based on BaSnO3 with Al2O3 gate oxide von Park, Chulkwon, Kim, Useong, Ju, Chan Jong, Park, Ji Sung, Kim, Young Mo, Char, Kookrin

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Transparent thin film transistors of polycrystalline SnO2−x and epitaxial SnO2−x von Jang, Yeaju, Lee, Hahoon, Char, Kookrin

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Selective chemical etching for termination layer control of BaSnO3 and 2DEG formation at the LaInO3/BaSnO3 interface von Kim, Seonghyeon, Kim, Bongju, Char, Kookrin

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LaInO3/BaSnO3 polar interface on MgO substrates von Kim, Youjung, Kim, Young Mo, Shin, Juyeon, Char, Kookrin

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High Mobility in a Stable Transparent Perovskite Oxide von Kim, Hyung Joon, Kim, Useong, Kim, Hoon Min, Kim, Tai Hoon, Mun, Hyo Sik, Jeon, Byung-Gu, Hong, Kwang Taek, Lee, Woong-Jhae, Ju, Chanjong, Kim, Kee Hoon, Char, Kookrin

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The role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces von Kim, Young Mo, Kim, Youjung, Char, Kookrin

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All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3 von Kim, Useong, Park, Chulkwon, Ha, Taewoo, Kim, Young Mo, Kim, Namwook, Ju, Chanjong, Park, Jisung, Yu, Jaejun, Kim, Jae Hoon, Char, Kookrin

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Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO3 von Seo, Jihoon, Kim, Juhan, Kim, Jae Ha, Kim, Jae Hoon, Char, Kookrin

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Low Leakage in High‐k Perovskite Gate Oxide SrHfO3 von Kim, Juhan, Song, Dowon, Yun, Hwanhui, Lee, Jaehyeok, Kim, Jae Ha, Kim, Jae Hoon, Kim, Bongju, Char, Kookrin

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Conducting interface states at LaInO3/BaSnO3 polar interface controlled by Fermi level von Kim, Useong, Park, Chulkwon, Kim, Young Mo, Shin, Juyeon, Char, Kookrin

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High electron mobility in epitaxial SnO2−x in semiconducting regime von Mun, Hyosik, Yang, Hyeonseok, Park, Jisung, Ju, Chanjong, Char, Kookrin

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Structural characterization of the LaInO3/BaSnO3 interface via synchrotron scattering von Lau, Claudia, Kim, Youjung, Albright, Stephen, Char, Kookrin, Ahn, C. H., Walker, F. J.

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Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3 von Kim, Hoon Min, Kim, Useong, Park, Chulkwon, Kwon, Hyukwoo, Char, Kookrin

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High mobility field effect transistor of SnOx on glass using HfOx gate oxide von Ju, Chanjong, Park, Chulkwon, Yang, Hyeonseok, Kim, Useong, Kim, Young Mo, Char, Kookrin

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Identification of F impurities in F-doped ZnO by synchrotron X-ray absorption near edge structures von Na-Phattalung, Sutassana, Limpijumnong, Sukit, Min, Chul-Hee, Cho, Deok-Yong, Lee, Seung-Ran, Char, Kookrin, Yu, Jaejun

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