Study of the Luminescence Power of Excitons and Impurity–Defect Centers Excited via Two-Photon Absorption von Gladilin, A. A., Danilov, V. P., Il’ichev, N. N., Kalinushkin, V. P., Studenikin, M. I., Uvarov, O. V., Chapnin, V. A., Ryabova, A. V., Sidorin, A. V., Gulyamova, E. S., Tumorin, V. V., Pashinin, P. P.

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Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers von Yuryev, V. A., Chizh, K. V., Chapnin, V. A., Mironov, S. A., Dubkov, V. P., Uvarov, O. V., Kalinushkin, V. P., Senkov, V. M., Nalivaiko, O. Y., Novikau, A. G., Gaiduk, P. I.

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Spatial Distribution of Impurity Defect Centers in Fe-Doped Polycrystalline Zinc Selenide von Balabanov, S. S., Gavrishchuk, E. M., Gladilin, A. A., Ikonnikov, V. B., Il’ichev, N. N., Kalinushkin, V. P., Mironov, S. A., Savin, D. V., Studenikin, M. I., Timofeeva, N. A., Uvarov, O. V., Chapnin, V. A.

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Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals von Gladilin, A. A., Ilichev, N. N., Kalinushkin, V. P., Studenikin, M. I., Uvarov, O. V., Chapnin, V. A., Tumorin, V. V., Novikov, G. G.

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Influence of Annealing in Zinc Vapor on the Microstructure and Activator Radiation of ZnSe : Fe von Kalinushkin, V. P., Klechkovskaya, V. V., Klevkov, Y. V., Chukichev, M. V., Rezvanov, R. R., Ilichev, N. N., Orekhov, A. S., Uvarov, O. V., Mironov, S. A., Gladilin, A. A., Chapnin, V. A.

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Distribution of luminescence centers in the bulk of undoped, Fe-doped, and Cr-doped CVD ZnSe polycrystals studied by two-photon confocal microscopy von Gavrishchuk, E. M., Gladilin, A. A., Danilov, V. P., Ikonnikov, V. B., Il’ichev, N. N., Kalinushkin, V. P., Ryabova, A. V., Studenikin, M. I., Timofeeva, N. A., Uvarov, O. V., Chapnin, V. A.

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IR luminescence of Fe{sup 2+} : ZnSe single crystals excited by an electron beam von Gladilin, A A, Gulyamova, E S, Danilov, V P, Il'ichev, N N, Kalinushkin, V P, Pashinin, P P, Sidorin, A V, Studenikin, M I, Chapnin, V A, Odin, I N, Chukichev, M V, Rezvanov, R R

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Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures von Feklisova, O.V., Yakimov, E.B., Arapkina, L.V., Chapnin, V.A., Chizh, K.V., Kalinushkin, V.P., Yuryev, V.A.

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Submillimeter Quasioptical Spectroscopy of Multilayer Conducting and Superconducting Systems von Prokhorov, A. S., Zhukova, E. S., Boris, A. A., Spektor, I. E., Gorshunov, B. P., S.Nozdrin, V., Motovilova, E. A., Kadyrov, L. S., Zapf, S., Haindl, S., Iida, K., Dressel, M., Chizh, K. V., Storozhevykh, M. S., Arapkina, L. V., Chapnin, V. A., Uvarov, O. V., Kalinushkin, V. P., Yuryev, V. A.

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Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by scanning tunneling microscopy, reflecte... von Arapkina, L. V., Krylova, L. A., Chizh, K. V., Chapnin, V. A., Uvarov, O. V., Yuryev, V. A.

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IR luminescence of F 2+ : ZnSe single crystals excited by an electron beam von Gladilin, A A, Gulyamova, E S, Danilov, V P, Il'ichev, N N, Kalinushkin, V P, Odin, I N, Pashinin, P P, Rezvanov, R R, Sidorin, A V, Studenikin, M I, Chapnin, V A, Chukichev, M V

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IR luminescence of Fe super(2+): ZnSe single crystals excited by an electron beam von Gladilin, A A, Gulyamova, E S, Danilov, V P, Il'ichev, N N, Kalinushkin, V P, Odin, I N, Pashinin, P P, Rezvanov, R R, Sidorin, A V, Studenikin I, M, Chapnin, V A, Chukichev, M V

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Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers von Yuryev, V A, Chizh, K V, Chapnin, V A, Mironov, S A, Dubkov, V P, Uvarov, O V, Kalinushkin, V P, Senkov, V M, Nalivaiko, O Y, Novikau, A G, Gaiduk, P I

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Absorption of terahertz radiation in Ge/Si(001) heterostructures with quantum dots von Zhukova, E. S., Gorshunov, B. P., Yuryev, V. A., Arapkina, L. V., Chizh, K. V., Chapnin, V. A., Kalinushkin, V. P., Prokhorov, A. S., Mikhailova, G. N.

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Metal silicide/poly-Si Schottky diodes for uncooled microbolometers von Chizh, K V, Chapnin, V A, Kalinushkin, V P, V Ya Resnik, Storozhevykh, M S, Yuryev, V A

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Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by STM, RHEED and HRTEM von Arapkina, L V, Krylova, L A, Chizh, K V, Chapnin, V A, Uvarov, O V, Yuryev, V A

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The role of interdiffusion and spatial confinement in the formation of resonant raman spectra of Ge/Si(100) heterostructures with quantum-dot arrays von Kucherenko, I. V., Vinogradov, V. S., Mel’nik, N. N., Arapkina, L. V., Chapnin, V. A., Chizh, K. V., Yur’ev, V. A.

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Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity von Yuryev, V A, Arapkina, L V, Storozhevykh, M S, Chapnin, V A, Chizh, K V, Uvarov, O V, Kalinushkin, V P, Zhukova, E S, Prokhorov, A S, Spektor, I E, Gorshunov, B P

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Absorption of Terahertz Radiation in Ge/Si(001) Heterostructures with Quantum Dots von Zhukova, E S, Gorshunov, B P, Yuryev, V A, Arapkina, L V, Chizh, K V, Chapnin, V A, Kalinushkin, V P, Prokhorov, A S, Mikhailova, G N

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The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays von Kucherenko, I V, Vinogradov, V S, Mel'nik, N N, Arapkina, L V, Chapnin, V A, Chizh, K V, Yuryev, V A

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