A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects von Chante, Jean-Pierre, Planson, Dominique, Isoird, K., Locatelli, Marie Laure, Cardinali, G.C., Poggi, Antonella, Ottaviani, Laurent, Nipoti, Roberta, Raynaud, Christophe, Lazar, Mihai

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Electrothermal modeling of IGBTs: application to short-circuit conditions von Ammous, A., Ammous, K., Morel, H., Allard, B., Bergogne, D., Sellami, F., Chante, J.P.

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A 4H-SiC high-power-density VJFET as controlled current limiter von Tournier, D., Godignon, P., Montserrat, J., Planson, D., Raynaud, C., Chante, J.P., de Palma, J.-F., Sarrus, F.

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Developing an equivalent thermal model for discrete semiconductor packages von Ammous, Anis, Sellami, Fayçal, Ammous, Kaiçar, Morel, Hervé, Allard, Bruno, Chante, Jean-Pierre

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Avalanche behavior of low-voltage power MOSFETs von Buttay, C., Salah, T.B., Bergogne, D., Allard, B., Morel, H., Chante, J.-P.

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Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments von Ottaviani, Laurent, Lazar, Mihai, Locatelli, Marie-Laure, Planson, Dominique, Chante, Jean-Pierre, Dubois, Christiane

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Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET von Montserrat, Josep, Chante, Jean-Pierre, Tournier, Dominique, Planson, Dominique, Godignon, Philippe, Sarrus, F.

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Realization of a High-Current and Low RON 600V Current-Limiting Device von Chante, Jean-Pierre, Planson, Dominique, Nallet, F., Godignon, Philippe, Raynaud, Christophe

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Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor von Lanois, Frédéric, Planson, Dominique, Locatelli, Marie-Laure, Lassagne, Patrick, Jaussaud, Claude, Chante, Jean-Pierre

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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing von Chante, Jean-Pierre, Morvan, Erwan, Planson, Dominique, Skorupa, Wolfgang, Locatelli, Marie Laure, Ottaviani, Laurent, Godignon, Philippe, Raynaud, Christophe, Lazar, Mihai

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Investigations on the thermal behavior of interconnects under ESD transients using a simplified thermal RC network von Salome, Pascal, Leroux, Charles, Crevel, Philippe, Chante, Jean Pierre

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Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter von Chante, Jean-Pierre, Tournier, Dominique, Planson, Dominique, Godignon, Philippe, Sarrus, F.

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Aluminum multiple implantations in 6H–SiC at 300 K von Ottaviani, Laurent, Morvan, Erwan, Locatelli, Marie-Laure, Planson, Dominique, Godignon, Philippe, Chante, Jean-Pierre, Senes, Albert

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A BiCMOS current conveyor based four-quadrant analog multiplier von Premont, C., Abouchi, N., Grisel, R., Chante, Jean-Pierre

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Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization von Chante, Jean-Pierre, Locatelli, Marie Laure, Isoird, K., Planson, Dominique, Raynaud, Christophe, Lazar, Mihai

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A current conveyor based field programmable analog array von Premont, C., Grisel, R., Abouchi, N., Chante, Jean-Pierre

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Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers von Lazar, M., Raynaud, C., Planson, D., Chante, J.-P., Locatelli, M.-L., Ottaviani, L., Godignon, Ph

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Numerical modeling of gate turn-off thyristor using SICOS von Ni, D.-G., Rojat, G., Clerc, G., Chante, J.-P.

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Edge termination strategies for a 4 kV 4H-SiC thyristor von BROSSELARD, P, PLANSON, D, SCHARNHOLZ, S, RAYNAUD, C, ZORNGIEBEL, V, LAZAR, M, CHANTE, J.-P, SPAHN, E

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1.2 kV pin diodes with SiCrystal epiwafer von Vang, Heu, Raynaud, Christophe, Brosselard, Pierre, Lazar, Mihai, Cremillieu, Pierre, Leclercq, Jean -Louis, Scharnholz, Sigo, Planson, Dominique, Chante, Jean-Pierre

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