Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor von Kadir, Abdul, Ganguli, Tapas, Gokhale, M.R., Shah, A.P., Chandvankar, S.S., Arora, B.M., Bhattacharya, Arnab

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Synthesis of AlGaAs-based strained separately confined heterostructure laser diodes by low temperature liquid-phase epitaxy von Chandvankar, S.S, Shah, A.P, Bhattacharya, A, Chandrasekaran, K.S, Arora, B.M

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LPE Growth of GaSb from Ga and Sn solutions von Chandvankar, S.S., Arora, B.M.

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Doping and surface morphology of Al xGa 1− xAs/GaAs grown at low temperature by liquid-phase epitaxy von Chandvankar, S.S., Shah, A.P., Arora, B.M.

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Doping and surface morphology of AlXGa1-XAS/GaAs grown at low temperature by liquid-phase epitaxy von CHANDVANKAR, S. S, SHAH, A. P, ARORA, B. M

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Indium thallium phosphide: experiments versus predictions von Chandvankar, S.S, Sharma, T.K, Shah, A.P, Chandrasekaran, K.S, Arora, B.M, Kapoor, A.K, Verma, Devendra, Sharma, B.B

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Ge doping of liquid phase epitaxial In 0.53Ga 0.47As von Chandvankar, S.S., Arora, B.M.

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Investigation of the role of tail-states in broad-band photoluminescence of heavily doped In 0.72Ga 0.28As 0.60P 0.40:Ge von Rajalakshmi, R., Srivastava, A.K., Sharma, D.K., Chandvankar, S.S., Arora, B.M.

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Ge doping of liquid phase epitaxial In0.53Ga0.47As von CHANDVANKAR, S. S, ARORA, B. M

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Low Temperature Electron Irradiation Induced Defects in N-GaSb von Murawala, P.A., Chandvankar, S.S., Arora, B.M.

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LPE growth of Ge-doped InGaAsP/InP by two-phase solution technique von Chandvankar, S.S., Rajalakshmi, R., Srivastava, A.K., Arora, B.M.

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Investigation of the role of tail-states in broad-band photoluminescence of heavily doped In0.72Ga0.28As0.60P0.40:Ge von RAJALAKSHMI, R, SRIVASTAVA, A. K, SHARMA, D. K, CHANDVANKAR, S. S, ARORA, B. M

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Doping of liquid phase epitaxial layers of InGaAsP with group IV elements von Arora, B.M., Chandvankar, S.S., Rajalakshmi, R., Srivastava, A.K., Chakravarty, S.

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