Vapor phase surface preparation (etching) of 4H–SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy von Rana, T., Chandrashekhar, M.V.S., Sudarshan, Tangali S.

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Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene Using IR Reflection Spectroscopy von Sudarshan, Tangali S., Daas, Biplob K., Chandrashekhar, M.V.S., Nomani, W. K., Koley, Goutam, Daniels, Kevin M.

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Evidence of Electrochemical Graphene Functionalization by Raman Spectroscopy von Feenstra, Randall M., Daas, Biplob K., Srivastava, Nishtha, Sudarshan, Tangali S., Williams, Christopher, Chandrashekhar, M.V.S., Daniels, Kevin M.

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Electrochemical Hydrogenation of Dimensional Carbon von Daniels, Kevin M., Shetu, Shamaita, Staser, John, Weidner, John W., Williams, Christopher, Sudarshan, Tangali, Chandrashekhar, M.V.S.

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Growth of high purity zone-refined Boron Carbide single crystals by Laser Diode Floating Zone method von Straker, Michael, Chauhan, Ankur, Sinha, Mekhola, Phelan, W. Adam, Chandrashekhar, M.V.S., Hemker, Kevin J., Marvel, Christopher, Spencer, Michael

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High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides... von Mollah, Shahab, Hussain, Kamal, Floyd, Richard, Mamun, Abdullah, Gaevski, Mikhail, Chandrashekhar, MVS, Ahmad, Iftikhar, Simin, Grigory, Wheeler, Virginia, Eddy, Charles, Khan, Asif

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4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth von Balachandran, Anusha, Song, Haizheng, Sudarshan, T.S., Chandrashekhar, M.V.S.

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SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF4) von Rana, Tawhid, Chandrashekhar, M.V.S., Daniels, Kevin, Sudarshan, Tangali

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Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor von Chandrashekhar, M.V.S., Sudarshan, T.S., Song, Hai Zheng

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Study of SiC Epitaxial Growth Using Tetrafluorosilane and Dichlorosilane in Vertical Hotwall CVD Furnace von Sudarshan, T.S., Shetu, Shamaita S., Chandrashekhar, M.V.S., Song, Hai Zheng, Balachandran, Anusha

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Comparison of SiC Epitaxial Growth from Dichlorosilane and Tetrafluorosilane Precursors von Song, Haizheng, Rana, Tawhid, Chandrashekhar, M.V.S., Omar, Sabih U., Sudarshan, Tangali S.

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Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases von Rana, Tawhid, Sudarshan, Tangali S., Chandrashekhar, M.V.S., Song, Hai Zheng

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Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth von Rana, Tawhid, Sudarshan, Tangali S., Chandrashekhar, M.V.S., Song, Hai Zheng

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Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density von Sudarshan, Tangali S., Omar, Sabih U., Chandrashekhar, M.V.S., Song, Hai Zheng

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Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces von Sudarshan, Tangali S., Daas, Biplob K., Chandrashekhar, M.V.S., Shetu, S., Daniels, Kevin M.

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Gallium nitride powders: Mechanism of ammonothermal synthesis, ball-mill assisted rare earth doping and uniform electrophoretic deposition von Thomas, Tiju, Guo, Xiaomei, Shi, Junxia, Lepak, Lori A., Chandrashekhar, M.V.S., Li, Kewen, DiSalvo, Francis J., Spencer, Michael G.

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Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks von Cai, Z., Garzon, S., Chandrashekhar, M.V.S., Webb, R.A., Koley, G.

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In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors von Rana, Tawhid, Sudarshan, Tangali S., Omar, Sabih U., Chandrashekhar, M.V.S., Song, Hai Zheng

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Effect of growth temperature on Eu incorporation in GaN powders von Shi, Junxia, Chandrashekhar, M.V.S., Reiherzer, Jesse, Schaff, William J., Lu, Jie, Disalvo, Francis J., Spencer, Michael G.

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Demonstration of a 4H SiC Betavoltaic Cell von Chandrashekhar, M.V.S., Lal, Amit, Thomas, Christopher I., Li, Hui, Spencer, Michael G.

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