A Sliding Scale Signal Quality Metric of Photoplethysmography Applicable to Measuring Heart Rate across Clinical Contexts with Chest Mounting as a Case Study von McLean, Marnie K, Weaver, R Glenn, Lane, Abbi, Smith, Michal T, Parker, Hannah, Stone, Ben, McAninch, Jonas, Matolak, David W, Burkart, Sarah, Chandrashekhar, M V S, Armstrong, Bridget

Volltext

Doping Dependence of Thermal Oxidation on n-Type 4H-SiC von Daas, B K, Islam, M M, Chowdhury, Iftekhar A, Feng Zhao, Sudarshan, T S, Chandrashekhar, M V S

Volltext

Thickness Estimation of Epitaxial Graphene on SiC Using Attenuation of Substrate Raman Intensity von Shivaraman, Shriram, Chandrashekhar, M. V. S., Boeckl, John J., Spencer, Michael G.

Volltext

Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection von Chava, Venkata S. N., Omar, Sabih U., Brown, Gabriel, Shetu, Shamaita S., Andrews, J., Sudarshan, T. S., Chandrashekhar, M. V. S.

Volltext

Comparison of Epitaxial Graphene Growth on Polar and Nonpolar 6H-SiC Faces: On the Growth of Multilayer Films von Daas, B. K, Omar, Sabih U, Shetu, S, Daniels, Kevin M, Ma, S, Sudarshan, T. S, Chandrashekhar, M. V. S

Volltext

Elimination of silicon gas phase nucleation using tetrafluorosilane (SiF4) precursor for high quality thick silicon carbide (SiC) homoepitaxy von Rana, T., Chandrashekhar, M. V. S., Sudarshan, T. S.

Volltext

High Purity Semi-Insulating 4H-SiC Epitaxial Layers by Defect-Competition Epitaxy: Controlling Si Vacancies von Chandrashekhar, M. V. S, Chowdhury, Iftekhar, Kaminski, Pavel, Kozlowski, Roman, Klein, P. B, Sudarshan, Tangali

Volltext

Development and Calibration of a PATCH Device for Monitoring Children's Heart Rate and Acceleration von Armstrong, Bridget, Weaver, R Glenn, McAninch, Jonas, Smith, Michal T, Parker, Hannah, Lane, Abbi D, Wang, Yuan, Pate, Russell R, Rahman, Mafruda, Matolak, David W, Chandrashekhar, M V S

Volltext

Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study von Coletti, C., Forti, S., Principi, A., Emtsev, K. V., Zakharov, A. A., Daniels, K. M., Daas, B. K., Chandrashekhar, M. V. S., Ouisse, T., Chaussende, D., MacDonald, A. H., Polini, M., Starke, U.

Volltext

Quantum Channel Extreme Bandgap AlGaN HEMT von Shur, Michael, Simin, Grigory, Hussain, Kamal, Mamun, Abdullah, Chandrashekhar, M. V. S., Khan, Asif

Volltext

High temperature operation of n-AlGaN channel metal semiconductor field effect transistors on low-defect AlN templates von Muhtadi, S., Hwang, S., Coleman, A., Asif, F., Lunev, A., Chandrashekhar, M. V. S., Khan, A.

Volltext

Current collapse in high-Al channel AlGaN HFETs von Mollah, Shahab, Gaevski, Mikhail, Hussain, Kamal, Mamun, Abdullah, Floyd, Richard, Hu, Xuhong, Chandrashekhar, M V S, Simin, Grigory, Khan, Asif

Volltext

Basal Plane Dislocation Free Recombination Layers on Low-Doped Buffer Layer for Power Devices von Balachandran, Anusha, Sudarshan, T. S., Chandrashekhar, M. V. S.

Volltext

Effect of growth temperature on Eu incorporation in GaN powders von Shi, Junxia, Chandrashekhar, M.V.S., Reiherzer, Jesse, Schaff, William J., Lu, Jie, Disalvo, Francis J., Spencer, Michael G.

Volltext

Molecular Adsorption Behavior of Epitaxial Graphene Grown on 6H-SiC Faces von Qazi, Muhammad, Nomani, Mohammad W. K, Chandrashekhar, M. V. S, Shields, Virgil B, Spencer, Michael G, Koley, Goutam

Volltext

Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's model von Omar, Sabih U, Sudarshan, Tangali S, Rana, Tawhid A, Song, Haizheng, Chandrashekhar, M V S

Volltext

High-speed solar-blind UV photodetectors using high-Al content Al0.64Ga0.36N/Al0.34Ga0.66N multiple quantum wells von Muhtadi, Sakib, Hwang, Seong Mo, Coleman, Antwon L., Lunev, Alexander, Asif, Fatima, Chava, V. S. N., Chandrashekhar, M. V. S., Khan, Asif

Volltext

Vapor phase surface preparation (etching) of 4H–SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy von Rana, T., Chandrashekhar, M.V.S., Sudarshan, Tangali S.

Volltext

Photovoltaic and Photoconductive Action Due to PbS Quantum Dots on Graphene/SiC Schottky Diodes from NIR to UV von Kelley, Mathew L, Letton, Joshua, Simin, Grigory, Ahmed, Fiaz, Love-Baker, Cole A, Greytak, Andrew B, Chandrashekhar, M. V. S

Volltext

Photoconductive Thin Films Composed of Environmentally Benign AgBiS2 Nanocrystal Inks Obtained through a Rapid Phase Transfer Process von Kelley, Mathew L, Ahmed, Fiaz, Abiodun, Sakiru L, Usman, Mohammad, Jewel, Mohi Uddin, Hussain, Kamal, zur Loye, Hans-Conrad, Chandrashekhar, M. V. S, Greytak, Andrew B

Volltext