Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: Results of a CCQM pilot study von Seah, M. P., Spencer, S. J., Bensebaa, F., Vickridge, I., Danzebrink, H., Krumrey, M., Gross, T., Oesterle, W., Wendler, E., Rheinländer, B., Azuma, Y., Kojima, I., Suzuki, N., Suzuki, M., Tanuma, S., Moon, D. W., Lee, H. J., Cho, Hyun Mo, Chen, H. Y., Wee, A. T. S., Osipowicz, T., Pan, J. S., Jordaan, W. A., Hauert, R., Klotz, U., van der Marel, C., Verheijen, M., Tamminga, Y., Jeynes, C., Bailey, P., Biswas, S., Falke, U., Nguyen, N. V., Chandler-Horowitz, D., Ehrstein, J. R., Muller, D., Dura, J. A.

Volltext

Critical review of the current status of thickness measurements for ultrathin SiO 2 on Si Part V: Results of a CCQM pilot study von Seah, M. P., Spencer, S. J., Bensebaa, F., Vickridge, I., Danzebrink, H., Krumrey, M., Gross, T., Oesterle, W., Wendler, E., Rheinländer, B., Azuma, Y., Kojima, I., Suzuki, N., Suzuki, M., Tanuma, S., Moon, D. W., Lee, H. J., Cho, Hyun Mo, Chen, H. Y., Wee, A. T. S., Osipowicz, T., Pan, J. S., Jordaan, W. A., Hauert, R., Klotz, U., van der Marel, C., Verheijen, M., Tamminga, Y., Jeynes, C., Bailey, P., Biswas, S., Falke, U., Nguyen, N. V., Chandler‐Horowitz, D., Ehrstein, J. R., Muller, D., Dura, J. A.

Volltext

Molecular beam epitaxial growth and characterization of Cd-based II-VI wide-bandgap compounds on Si substrates von BRILL, G, CHEN, Y, AMIRTHARAJ, P. M, SARNEY, W, CHANDLER-HOROWITZ, D, DHAR, N. K

Volltext

The relationship between local order, long range order, and sub-band-gap defects in hafnium oxide and hafnium silicate films von Hill, D. H., Bartynski, R. A., Nguyen, N. V., Davydov, Albert C., Chandler-Horowitz, Deane, Frank, Martin M.

Volltext

Crystalline quality of bonded silicon-on-insulator characterized by spectroscopic ellipsometry and Raman spectroscopy von Nguyen, N. V., Maslar, J. E., Kim, Jin-Yong, Han, Jin-Ping, Park, Jin-Won, Chandler-Horowitz, D., Vogel, E. M.

Volltext

Determination of the optical constants of ZnSe films by spectroscopic ellipsometry von Dahmani, R., Salamanca-Riba, L., Nguyen, N. V., Chandler-Horowitz, D., Jonker, B. T.

Volltext

The Raman spectrum of carbon in silicon von FORMAN, R. A, BELL, M. I, MYERS, D. R, CHANDLER-HOROWITZ, D

Volltext

High sensitivity attenuated total reflection Fourier transform infrared spectroscopy study of ultrathin Zr O 2 films: A study of phase change von Sayan, S., Chandler-Horowitz, D., Nguyen, N. V., Ehrstein, J. R.

Volltext

Principal angle spectroscopic ellipsometry utilizing a rotating analyzer von Chandler-Horowitz, D, Candela, G A

Volltext

Thickness Evaluation for 2nm SiO2 Films, a Comparison of Ellipsometric, Capacitance-Voltage and HRTEM Measurements von Ehrstein, James, Richter, Curt, Chandler-Horowitz, Deane, Vogel, Eric, Ricks, Donnie, Young, Chadwin, Spencer, Steve, Shah, Shweta, Maher, Dennis, an, Brendan

Volltext

AlGaAs composition measurements from in situ optical reflectance von Bertness, K.A., Armstrong, J.T., Marinenko, R.B., Robins, L.H., Paul, A.J., Pellegrino, J.G., Amirtharaj, P.M., Chandler-Horowitz, D.

Volltext

Numerical modeling of silicon photodiodes for high-accuracy applications. I : Simulation programs von GEIST, J, CHANDLER-HOROWITZ, D, ROBINSON, A. M, JAMES, C. R

Volltext

Sensitivity of ellipsometric modeling to the 'islands' of silicon precipitates at the bottom of the buried oxide layer in annealed SIMOX von Chandler-Horowitz, D., Marchiando, J.F., Doss, M., Krause, S., Visitserngtrakul, S.

Volltext bestellen

Numerical modeling of silicon photodiodes for high-accuracy applications, Part I. simulation programs von Geist, J., Chandlerhorowitz, D., Robinson, A.M., James, C.R.

Volltext