Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch von Ji, Dong, Li, Wenwen, Agarwal, Anchal, Chan, Silvia H., Haller, Jeffrey, Bisi, Davide, Labrecque, Michelle, Gupta, Chirag, Cruse, Bill, Lal, Rakesh, Keller, Stacia, Mishra, Umesh K., Chowdhury, Srabanti

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Solution-Based Stoichiometric Control over Charge Transport in Nanocrystalline CdSe Devices von Kim, David K, Fafarman, Aaron T, Diroll, Benjamin T, Chan, Silvia H, Gordon, Thomas R, Murray, Christopher B, Kagan, Cherie R

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Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN von Chan, Silvia H., Bisi, Davide, Liu, Xiang, Yeluri, Ramya, Tahhan, Maher, Keller, Stacia, DenBaars, Steven P., Meneghini, Matteo, Mishra, Umesh K.

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Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices von Chan, Silvia H., Tahhan, Maher, Liu, Xiang, Bisi, Davide, Gupta, Chirag, Koksaldi, Onur, Li, Haoran, Mates, Tom, DenBaars, Steven P., Keller, Stacia, Mishra, Umesh K.

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High electron mobility recovery in AlGaN GaN 2DEG channels regrown on etched surfaces von Chan, Silvia H, Keller, Stacia, Tahhan, Maher, Li, Haoran, Romanczyk, Brian, DenBaars, Steven P, Mishra, Umesh K

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Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN AlN and GaN AlN AlGaN heterostructures von Li, Haoran, Keller, Stacia, Chan, Silvia H, Lu, Jing, DenBaars, Steven P, Mishra, Umesh K

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In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates von Gupta, Chirag, Lund, Cory, Chan, Silvia H., Agarwal, Anchal, Junquian Liu, Enatsu, Yuuki, Keller, Stacia, Mishra, Umesh K.

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Electro-Thermal Investigation of GaN Vertical Trench MOSFETs von Chatterjee, Bikramjit, Ji, Dong, Agarwal, Anchal, Chan, Silvia H., Chowdhury, Srabanti, Choi, Sukwon

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First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET von Gupta, Chirag, Chan, Silvia H., Agarwal, Anchal, Hatui, Nirupam, Keller, Stacia, Mishra, Umesh K.

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Corrections to "In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates' [Mar 17 353-355] von Gupta, Chirag, Lund, Cory, Chan, Silvia H., Agarwal, Anchal, Liu, Junqian, Enatsu, Yuuki, Keller, Stacia, Mishra, Umesh K.

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OG-FET: An In-Situ xide, aN Interlayer-Based Vertical Trench MOSFET von Gupta, Chirag, Chan, Silvia H., Enatsu, Yuuki, Agarwal, Anchal, Keller, Stacia, Mishra, Umesh K.

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Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness von Tahhan, Maher, Nedy, Joseph, Chan, Silvia H., Lund, Cory, Li, Haoran, Gupta, Geetak, Keller, Stacia, Mishra, Umesh

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Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition von Chan, Silvia H., Bisi, Davide, Tahhan, Maher, Gupta, Chirag, DenBaars, Steven P., Keller, Stacia, Zanoni, Enrico, Mishra, Umesh K.

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Exploring metalorganic chemical vapor deposition of Si-alloyed Al 2 O 3 dielectrics using disilane von Chan, Silvia H., Keller, Stacia, Koksaldi, Onur S., Gupta, Chirag, DenBaars, Steven P., Mishra, Umesh K.

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Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) von Ji, Dong, Gupta, Chirag, Agarwal, Anchal, Chan, Silvia H., Lund, Cory, Li, Wenwen, Keller, Stacia, Mishra, Umesh K., Chowdhury, Srabanti

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Improved Dynamic R ON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch von Ji, Dong, Li, Wenwen, Agarwal, Anchal, Chan, Silvia H., Haller, Jeffrey, Bisi, Davide, Labrecque, Michelle, Gupta, Chirag, Cruse, Bill, Lal, Rakesh, Keller, Stacia, Mishra, Umesh K., Chowdhury, Srabanti

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Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels von Gupta, Chirag, Chan, Silvia H., Lund, Cory, Agarwal, Anchal, Koksaldi, Onur S., Liu, Junquian, Enatsu, Yuuki, Keller, Stacia, Mishra, Umesh K.

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Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs von Gupta, Chirag, Dong Ji, Chan, Silvia H., Agarwal, Anchal, Leach, William, Keller, Stacia, Chowdhury, Srabanti, Mishra, Umesh K.

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Exploring metalorganic chemical vapor deposition of Si-alloyed Al2O3 dielectrics using disilane von Chan, Silvia H., Keller, Stacia, Koksaldi, Onur S., Gupta, Chirag, DenBaars, Steven P., Mishra, Umesh K.

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Exploring metalorganic chemical vapor deposition of Si-alloyed Al^sub 2^O^sub 3^ dielectrics using disilane von Chan, Silvia H, Keller, Stacia, Koksaldi, Onur S, Gupta, Chirag, Denbaars, Steven P, Mishra, Umesh K

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