Non-Volatile Polymer Memory Device Based on a Novel Copolymer of N-Vinylcarbazole and Eu-Complexed Vinylbenzoate von Ling, Q., Song, Y., Ding, S. J., Zhu, C., Chan, D. S. H., Kwong, D.-L., Kang, E.-T., Neoh, K.-G.

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Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric von Wu, Nan, Zhang, Qingchun, Zhu, Chunxiang, Chan, D. S. H., Li, M. F., Balasubramanian, N., Chin, Albert, Kwong, Dim-Lee

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Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate von Wu, Nan, Zhang, Qingchun, Zhu, Chunxiang, Yeo, Chia Chin, Whang, S. J., Chan, D. S. H., Li, M. F., Cho, Byung Jin, Chin, Albert, Kwong, Dim-Lee, Du, A. Y., Tung, C. H., Balasubramanian, N.

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Fermi pinning-induced thermal instability of metal-gate work functions von Yu, H.Y., Ren, C., Yee-Chia Yeo, Kang, J.F., Wang, X.P., Ma, H.H.H., Ming-Fu Li, Chan, D.S.H., Kwong, D.-L.

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A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation von NAN WU, QINGCHUN ZHANG, ZHU, Chunxiang, CHAN, D. S. H, ANYAN DU, BALASUBRAMANIAN, N, LI, M. F, CHIN, Albert, SIN, Johnny K. O, KWONG, D.-L

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Electrically Bistable Thin-Film Device Based on PVK and GNPs Polymer Material von Song, Y., Ling, Q.D., Lim, S.L., Teo, E.Y.H., Tan, Y.P., Li, L., Kang, E.T., Chan, D.S.H., Chunxiang Zhu

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Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices von Jing Pu, Chan, D.S.H., Sun-Jung Kim, Byung Jin Cho

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Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories von Chen, Jing Hao, Yoo, Won Jong, Chan, Daniel S. H., Tang, Lei-Jun

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Cubic-Structured hbox HfO 2 With Optimized Doping of Lanthanum for Higher Dielectric Constant von He, Wei, Chan, DSH, Zhang, Lu, Cho, Byung Jin

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Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode von Shiyang Zhu, Yu, H.Y., Whang, S.J., Chen, J.H., Chen Shen, Chunxiang Zhu, Lee, S.J., Li, M.F., Chan, D.S.H., Yoo, W.J., Du, A., Tung, C.H., Singh, J., Chin, A., Kwong, D.L.

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Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complex von Song, Y., Ling, Q.D., Zhu, C., Kang, E.T., Chan, D.S.H., Wang, Y.H., Kwong, D.-L.

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Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body von Lim, Y.F., Xiong, Y.Z., Singh, N., Yang, R., Jiang, Y., Chan, D.S.H., Loh, W.Y., Bera, L.K., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.

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RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications von Ding, Shi-Jin, Hu, Hang, Zhu, Chunxiang, Kim, Sun Jung, Yu, Xiongfei, Li, Ming-Fu, Cho, Byung Jin, Chan, D.S.H, Yu, M.B, Rustagi, S.C, Chin, A, Kwong, Dim-Lee

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Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique von Jiang, Y., Singh, N., Liow, T.Y., Loh, W.Y., Balakumar, S., Hoe, K.M., Tung, C.H., Bliznetsov, V., Rustagi, S.C., Lo, G.Q., Chan, D.S.H., Kwong, D.L.

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Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering von Kang, J. F., Yu, H. Y., Ren, C., Li, M.-F., Chan, D. S. H., Hu, H., Lim, H. F., Wang, W. D., Gui, D., Kwong, D.-L.

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Omega-Gate p-MOSFET With Nanowirelike SiGe/Si Core/Shell Channel von Jiang, Y., Singh, N., Liow, T.Y., Lim, P.C., Tripathy, S., Lo, G.Q., Chan, D.S.H., Kwong, D.-L.

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Characteristics of Self-Aligned Gate-First Ge p- and n-Channel MOSFETs Using CVD HfO sub(2) Gate Dielectric and Si Surface Passivation von Wu, Nan, Zhang, Qingchun, Balasubramanian, N, Chan, DSH, Zhu, Chunxiang

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A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gate von Ren, C, Yu, H.Y, Kang, J.F, Wang, X.P, Ma, H.H.H, Yeo, Yee-Chia, Chan, D.S.H, Li, M.-F, Kwong, D.-L

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Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process von Moon Sig Joo, Byung Jin Cho, Chia Ching Yeo, Siu Hung Chan, D., Sung Jin Whoang, Mathew, S., Kanta Bera, L., Balasubramanian, N., Dim-Lee Kwong

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High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics von Shi-Jin Ding, Hang Hu, Lim, H.F., Kim, S.J., Yu, X.F., Chunxiang Zhu, Li, M.F., Byung Jin Cho, Chan, D.S.H., Rustagi, S.C., Yu, M.B., Chin, A., Dim-Lee Kwong

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