SOI flash memory scaling limit and design consideration based on 2-D analytical modeling von Chan, A.C.K., Tsz-Yin Man, Jin He, Kam-Hung Yuen, Wai-Kit Lee, Chan, M.

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Direct tunneling stress-induced leakage current in nMOS devices with ultrathin gate oxides von Samanta, P., Tsz Yin Man, Alain Chun Keung Chan, Qingchun Zhang, Chunxiang Zhu, Mansun Chan

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Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics von Samanta, Piyas, Man, Tsz Yin, Chan, Alain Chun Keung, Zhang, Qingchun, Zhu, Chunxiang, Chan, Mansun

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High quality thermal oxide on LPSOI formed by high temperature enhanced MILC von Chan, A.C.-K., Hongmei Wang, Chan, M.J.

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A viable self-aligned bottom-gate MOS transistor technology for deep submicron 3-D SRAM von Shengdong Zhang, Chan, A.C.K., Ruqi Han, Ru Huang, Xiaoyan Liu, Yangyuan Wang, Ko, P.K., Chan, Mansun

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Improved oxide quality on polysilicon by enhanced Metal-Induced-Lateral-Crystallization (MILC) von Alain Chun-Keung Chan, Hongmei Wang, Chan, Mansun

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