Ni- and Co-based silicides for advanced CMOS applications von Kittl, J.A., Lauwers, A., Chamirian, O., Van Dal, M., Akheyar, A., De Potter, M., Lindsay, R., Maex, K.

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Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide von Lauwers, A, de Potter, M, Chamirian, O, Lindsay, R, Demeurisse, C, Vrancken, C, Maex, K

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Thickness scaling issues of Ni silicide von Chamirian, O, Kittl, J.A, Lauwers, A, Richard, O, van Dal, M, Maex, K

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Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies von Pawlak, M.A., Kittl, J.A., Chamirian, O., Veloso, A., Lauwers, A., Schram, T., Maex, K., Vantomme, A.

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Study of thermal stability of nickel silicide by X-ray reflectivity von Van Hove, M., Travaly, Y., Sajavaara, T., Brijs, B., Vandervorst, W., Lauwers, A., Chamirian, O., Kittl, J.A., Jonas, A.M., Maex, K.

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Study of silicide contacts to SiGe source/drain von Lauwers, A., van Dal, M.J.H., Verheyen, P., Chamirian, O., Demeurisse, C., Mertens, S., Vrancken, C., Verheyden, K., Funk, K., Kittl, J.A.

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Reaction of Ni and Si0.8Ge0.2: phase formation and thermal stability von Chamirian, O., Lauwers, A., Kittl, J.A., Dal, M. Van, Potter, M. De, Lindsay, R., Maex, K.

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Mapping nanometre-scale temperature gradients in patterned cobalt-nickel silicide films von Cannaerts, M, Chamirian, O, Maex, K, Haesendonck, C Van

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Low temperature spike anneal for Ni-silicide formation von Lauwers, A., Kittl, J.A., Van Dal, M., Chamirian, O., Lindsay, R., de Potter, M., Demeurisse, C., Vrancken, C., Maex, K., Pagès, X., Van der Jeugd, K., Kuznetsov, V., Granneman, E.

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Study of CoSi2 formation from a Co-Ni alloy von CHAMIRIAN, O, STEEGEN, A, BENDERA, H, LAUWERSA, A, DE POTTER, M, MARABELLIB, F, MAEX, K

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CoSi2 formation from CoxNi1-x/Ti system von CHAMIRIAN, O, LAUWERS, A, DEMEURISSE, C, GUERAULT, H, VANTOMME, A, MAEX, K

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Direct observation of preferential heating near grain boundaries in patterned silicide films von Cannaerts, M., Volodin, A., Van Haesendonck, C., Chamirian, O., Maex, K., Smeets, D., Vantomme, A.

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Direct observation of preferential heating near grain boundariesin patterned silicide films von Cannaerts, M., Volodin, A., Van Haesendonck, C., Chamirian, O., Maex, K., Smeets, D., Vantomme, A.

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Ni based silicides for 45 nm CMOS and beyond von Lauwers, Anne, Kittl, Jorge A., Van Dal, Mark J.H., Chamirian, Oxana, Pawlak, Malgorzata A., de Potter, Muriel, Lindsay, Richard, Raymakers, Toon, Pages, Xavier, Mebarki, Bencherki, Mandrekar, Tushar, Maex, Karen

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Reaction of Ni and SiO.8Ge0.2: phase formation and thermal stability von Chamirian, O, Lauwers, A, Kittl, J A, Van Dal, M, De Potter, M, Lindsay, R, Maex, K

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CoSi sub(2) formation from Co sub(x)Ni sub(1-x)/Ti system von Chamirian, O, Lauwers, A, Demeurisse, C, Guerault, H, Vantomme, A, Maex, K

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CoSi 2 formation from Co xNi 1− x/Ti system von Chamirian, O, Lauwers, A, Demeurisse, C, Guérault, H, Vantomme, A, Maex, K

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Study of CoSi sub(2) formation from a Co-Ni alloy von Chamirian, O, Steegen, A, Bender, H, Lauwers, A, De Potter, M, Marabelli, F, Maex, K

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Study of silicide contacts to SiGe source/drain von LAUWERS, A, VAN DAL, M. J. H, VERHEYEN, P, CHAMIRIAN, O, DEMEURISSE, C, MERTENS, S, VRANCKEN, C, VERHEYDEN, K, FUNK, K, KITTL, J. A

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Sidewall grooving on COSI2 narrow lines von CHAMIRIAN, O, DE POTTER, M, LAUWERS, A, RICHARD, O, LINDSAY, R, VRANCKEN, C, MAEX, K

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