Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs von Sushkov, A. A., Pavlov, D. A., Andrianov, A. I., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Kriukov, R. N., Baidus, N. V., Yurasov, D. V., Rykov, A. V.

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Gallium-doped germanium epitaxial layers grown on silicon substrates by hot wire chemical vapor deposition von Shengurov, V.G., Denisov, S.A., Yu. Chalkov, V., Filatov, D.O., Kudrin, A.V., Sychyov, S.M., Trushin, V.N., Zaitsev, A.V., Titova, A.M., Alyabina, N.A.

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Structure and surface morphology of GeSn/Si(001) layers grown by HW CVD with co-evaporation of Sn von Zaitsev, A V, Kuz'min, M Yu, Denisov, S A, Shengurov, V G, Chalkov, V Yu, Kudrin, A V, Ved', M V, Filatov, D O

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High-quality Ge epilayers grown on a Si substrate in one step process via hot wire chemical vapor deposition von Denisov, S A, Matveev, S A, Chalkov, V Yu, Shengurov, V G

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Ge/Si(001) Heteroepitaxial Layers Doped in the HW CVD Process by Impurity Evaporation from a Sublimating Ge Source von Titova, A. M., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Zaitsev, A. V., Alyabina, N. A., Kudrin, A. V., Zdoroveishev, A. V.

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Development of a Ge-MISFET Instrument Structure with an Induced p-Type Channel von Alyabina, N. A., Arkhipova, E. A., Buzynin, Yu. N., Denisov, S. A., Zdoroveishchev, A. V., Titova, A. M., Chalkov, V. Yu, Shengurov, V. G.

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Growth of a Ge Layer on a Si/SiO2/Si(100) Structure by the Hot Wire Chemical Vapor Deposition von Sushkov, A. A., Pavlov, D. A., Denisov, S. A., Chalkov, V. Yu, Kryukov, R. N., Pitirimova, E. A.

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Demonstration of the Effect of Resistive Switching of Individual Filaments in Memristor Ag/Ge/Si Structures Using Atomic Force Microscopy von Vorontsov, V. A., Antonov, D. A., Kruglov, A. V., Antonov, I. N., Kotomina, V. E., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Filatov, D. O., Gorshkov, O. N.

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Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition von Shengurov, V. G., Filatov, D. O., Denisov, S. A., Chalkov, V. Yu, Alyabina, N. A., Zaitsev, A. V.

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Resistive Switching in Memristors Based on Ge/Si(001) Epitaxial Layers von Filatov, D. O., Shenina, M. E., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Kruglov, A. V., Vorontsov, V. A., Pavlov, D. A., Gorshkov, O. N.

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Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands von Filatov, D. O., Guseinov, D. V., Chalkov, V. Yu, Denisov, S. A., Shengurov, V. G.

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Resistive Switching in Memristors Based on Ag/Ge/Si Heterostructures von Gorshkov, O. N., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Antonov, I. N., Kruglov, A. V., Shenina, M. E., Kotomina, V. E., Filatov, D. O., Serov, D. A.

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On the Influence of Pulsed Gamma-Neutron Irradiation on the Morphology of Self-Assembled GeSi/Si(001) Nanoislands von Ivanova, M. M., Filatov, D. O., Nezhdanov, A. V., Shengurov, V. G., Chalkov, V. Yu, Denisov, S. A.

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Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate von Sushkov, A. A., Pavlov, D. A., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Baidus, N. V., Rykov, A. V., Kryukov, R. N.

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Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers von Prokhorov, D. S., Shengurov, V. G., Denisov, S. A., Filatov, D. O., Zdoroveishev, A. V., Chalkov, V. Yu, Zaitsev, A. V., Ved’, M. V., Dorokhin, M. V., Baidakova, N. A.

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Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers von Ivanova, M. M., Kachemtsev, A. N., Mikhaylov, A. N., Filatov, D. O., Gorshkov, A. P., Volkova, N. S., Chalkov, V. Yu, Shengurov, V. G.

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Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy von Filatov, D. O., Kazantseva, I. A., Shengurov, V. G., Chalkov, V. Yu, Denisov, S. A., Gorshkov, A. P., Mishkin, V. P.

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Conditions of growth of high-quality relaxed Si1–x Ge x layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire von Shengurov, V. G., Chalkov, V. Yu, Denisov, S. A., Matveev, S. A., Nezhdanov, A. V., Mashin, A. I., Filatov, D. O., Stepikhova, M. V., Krasilnik, Z. F.

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Growth defects in GeSn/Ge/Si(001) epitaxial layers grown by hot wire chemical vapor deposition of Ge with co-evaporation of Sn von Shengurov, V.G., Chalkov, V.Yu, Denisov, S.A., Trushin, V.N., Zaitsev, A.V., Nezhdanov, A.V., Pavlov, D.A., Filatov, D.O.

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Epitaxial n+-Ge/p+-Si(001) heterostructures with ultra sharp doping profiles for light emitting diode applications von Titova, A.M., Shengurov, V.G., Filatov, D.O., Denisov, S.A., Chalkov, V.Yu, Ved', M.V., Zaitzev, A.V., Sushkov, A.A., Alyabina, N.A.

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