The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM von Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Potter, R. J., Guo, Y., Gibbon, J. T., Dhanak, V. R., Zhang, W. D., Zhang, J. F., Robertson, J., Hall, S., Chalker, P. R.

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Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobili... von Partida-Manzanera, T., Zaidi, Z. H., Roberts, J. W., Dolmanan, S. B., Lee, K. B., Houston, P. A., Chalker, P. R., Tripathy, S., Potter, R. J.

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Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping von Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Guo, Y., Potter, R. J., Gibbon, J. T., Dhanak, V. R., Zhang, W. D., Zhang, J. F., Hall, S., Robertson, J., Chalker, P. R.

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Embedded fibre Bragg grating sensors in advanced composite materials von Kuang, K.S.C., Kenny, R., Whelan, M.P., Cantwell, W.J., Chalker, P.R.

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Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements von Tao, J, Zhao, C Z, Zhao, C, Taechakumput, P, Werner, M, Taylor, S, Chalker, P R

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Band alignments at Ga2O3 heterojunction interfaces with Si and Ge von Gibbon, J. T., Jones, L., Roberts, J. W., Althobaiti, M., Chalker, P. R., Mitrovic, Ivona Z., Dhanak, V. R.

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Tailoring Precursors for Deposition: Synthesis, Structure, and Thermal Studies of Cyclopentadienylcopper(I) Isocyanide Complexes von Willcocks, A. M, Pugh, T, Cosham, S. D, Hamilton, J, Sung, S. L, Heil, T, Chalker, P. R, Williams, P. A, Kociok-Köhn, G, Johnson, A. L

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Photochemical atomic layer deposition and etching von Chalker, P.R.

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Atomic layer deposited α-Ga2O3 solar-blind photodetectors von Moloney, J, Tesh, O, Singh, M, Roberts, J W, Jarman, J C, Lee, L C, Huq, T N, Brister, J, Karboyan, S, Kuball, M, Chalker, P R, Oliver, R A, Massabuau, F C-P

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Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3 von Nicol, D., Oshima, Y., Roberts, J. W., Penman, L., Cameron, D., Chalker, P. R., Martin, R. W., Massabuau, F. C.-P.

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Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer von Moram, M.A., Kappers, M.J., Joyce, T.B., Chalker, P.R., Barber, Z.H., Humphreys, C.J.

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Vacuum ultraviolet photochemical selective area atomic layer deposition of Al2O3 dielectrics von Chalker, P. R., Marshall, P. A., Dawson, K., Brunell, I. F., Sutcliffe, C. J., Potter, R. J.

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Selective laser sintering of barium titanate–polymer composite films von Clare, A. T, Chalker, P. R, Davies, S, Sutcliffe, C. J, Tsopanos, S

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Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition von Roberts, J.W., Chalker, P.R., Ding, B., Oliver, R.A., Gibbon, J.T., Jones, L.A.H., Dhanak, V.R., Phillips, L.J., Major, J.D., Massabuau, F.C.-P.

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Compositional tuning of atomic layer deposited MgZnO for thin film transistors von Wrench, J. S., Brunell, I. F., Chalker, P. R., Jin, J. D., Shaw, A., Mitrovic, I. Z., Hall, S.

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Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature von Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Dhanak, V. R., Linhart, W. M., Veal, T. D., Sedghi, N., Hall, S., Chalker, P. R., Tsoutsou, D., Dimoulas, A.

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Atomic layer deposition of Nb-doped ZnO for thin film transistors von Shaw, A., Wrench, J. S., Jin, J. D., Whittles, T. J., Mitrovic, I. Z., Raja, M., Dhanak, V. R., Chalker, P. R., Hall, S.

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Residual strain measurement and impact response of optical fibre Bragg grating sensors in fibre metal laminates von Kuang, K S C, Kenny, R, Whelan, M P, Cantwell, W J, Chalker, P R

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Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires von Lari, L., Walther, T., Gass, M.H., Geelhaar, L., Chèze, C., Riechert, H., Bullough, T.J., Chalker, P.R.

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Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposi... von Roberts, J. W., Chalker, P. R., Lee, K. B., Houston, P. A., Cho, S. J., Thayne, I. G., Guiney, I., Wallis, D., Humphreys, C. J.

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