Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy von Cherkashin, N., Reboh, S., Hÿtch, M. J., Claverie, A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Chaldyshev, V. V.

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Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence von Kosarev, A. N., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs von Ushanov, V. I., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells von Bolshakov, A. S., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, V. V., Tsatsulnikov, A. F.

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Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State von Chaldyshev, V. V., Kundelev, E. V., Poddubny, A. N., Vasil’ev, A. P., Yagovkina, M. A., Chend, Y., Maharjan, N., Liu, Z., Nakarmi, M. L., Shakya, N. M.

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Study of multiple InAs/GaAs ouantum-well structures by Electroreflectance Spectroscopy von Bolshakov, A.S, Chaldyshev, V.V, Babichev, A.V, Kudryashov, D.A, Gudovskikh, A.S, Morozov, I.A, Sobolev, M.S, Nikitina, E.V

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Fröhlich resonance in the AsSb/AlGaAs system von Ushanov, V. I., Chaldyshev, V. V., Il’inskaya, N. D., Lebedeva, N. M., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures von Pastor, A. A., Prokhorova, U. V., Serdobintsev, P. Yu, Chaldyshev, V. V., Yagovkina, M. A.

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Optical lattices of excitons in InGaN/GaN quantum well systems von Chaldyshev, V. V., Bolshakov, A. S., Zavarin, E. E., Sakharov, A. V., Lundin, V. V., Tsatsulnikov, A. F., Yagovkina, M. A.

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Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures von Nevedomskiy, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhernskiy, V. V., Putyato, M. A., Semyagin, B. R.

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Resonance Bragg structure with double InGaN quantum wells von Bol’shakov, A. S., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, V. V., Tsatsul’nikov, A. F., Yagovkina, M. A.

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Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells von Chaldyshev, V. V., Kundelev, E. V., Nikitina, E. V., Egorov, A. Yu, Gorbatsevich, A. A.

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Experimental evaluation of the carrier lifetime in GaAs grown at low temperature von Pastor, A. A., Serdobintsev, P. Yu, Chaldyshev, V. V.

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Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions von Lukin, P. V., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix von Nevedomskiy, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhenskiy, V. V., Putyato, M. A., Semyagin, B. R.

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Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier von Nevedomskiy, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhenskiy, V. V., Putyato, M. A., Semyagin, B. R.

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An [.sub.60] resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wells von Chaldyshev, V.V, Sholohov, D.E, Vasil'ev, A.P

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Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism von Cherkashin, N. A., Claverie, A., Bonafos, C., Chaldyshev, V. V., Bert, N. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Werner, P.

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Two-dimensional organization of As clusters in GaAs von Chaldyshev, V.V

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Electron microscopy of GaAs Structures with InAs and as quantum dots von Nevedomskii, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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