Density-functional theory molecular dynamics simulations of a-HfO2/Ge(100)(2 × 1) and a-ZrO2/Ge(100)(2 × 1) interface passivation von Chagarov, E. A., Porter, L., Kummel, A. C.

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Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide von Kerr, A J, Chagarov, E, Gu, S, Kaufman-Osborn, T, Madisetti, S, Wu, J, Asbeck, P M, Oktyabrsky, S, Kummel, A C

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Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN von Gu, S., Chagarov, E.A., Min, J., Madisetti, S., Novak, S., Oktyabrsky, S., Kerr, A.J., Kaufman-Osborn, T., Kummel, A.C., Asbeck, P.M.

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Density-functional theory computer simulations of CZTS0.25Se0.75 alloy phase diagrams von Chagarov, E., Sardashti, K., Haight, R., Mitzi, D. B., Kummel, A. C.

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Density-functional theory computer simulations of CZTS{sub 0.25}Se{sub 0.75} alloy phase diagrams von Chagarov, E., Sardashti, K., Kummel, A. C., Haight, R., Mitzi, D. B.

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Improvement of the repulsive part of the classical interatomic potential for SiC von Belko, V., Posselt, M., Chagarov, E.

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Influence of polytypism on elementary processes of ion-beam-induced defect production in SiC von Posselt, M, Belko, V, Chagarov, E

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Molecular dynamics simulations of mechanical deformation of amorphous silicon dioxide during chemical–mechanical polishing von Chagarov, Evgueni, Adams, James B.

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X-ray photoemission analysis of CS 2 treated polycrystalline Cu(In,Ga)Se 2 von Nelson, A.J, Gregoratti, L, Chagarov, E, Lonza, D, Marsi, M, Kiskinova, M

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Scanning Probe Microscopy Imaging before and after Atomic Layer Oxide Deposition on a Compound Semiconductor Surface von Melitz, W., Lee, J.S., Shen, J., Kummel, A.C., Chagarov, E.A., Droopad, R., Lee, S., Thayne, I., Bentley, S., Clemens, J.B., Royer, J.E., Holland, M., McIntyre, D.

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Application of design of experiments methodology to optimization of classical molecular dynamics generation of amorphous SiO2 structure von Chagarov, Evgueni, Adams, James B, Kieffer, John

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III-V MOSFETs: Scaling laws, scaling limits, fabrication processes von Rodwell, M. J. W., Shin, B., Lee, Yong-ju, Steiger, S., Lee, S., Ryu, H., Tan, Y., Hegde, G., Wang, L., Chagarov, E., Gossard, A. C., Singisetti, U., Frensley, W., Kummel, A., Palmstrom, C., McIntyre, Paul C, Boykin, T., Klimek, G., Asbeck, P., Wistey, M., Burek, G. J., Carter, A., Baraskar, A., Law, J., Thibeault, B. J., Kim, Eun Ji

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III-V FET channel designs for high current densities and thin inversion layers von Rodwell, M, Frensley, W, Steiger, S, Chagarov, E, Lee, S, Ryu, H, Tan, Y, Hegde, G, Wang, L, Law, J, Boykin, T, Klimek, G, Asbeck, P, Kummel, A, Schulman, J N

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Ab initio calculations of surface phase diagrams of silica polymorphs von CHAGAROV, Evgueni, DEMKOV, Alexander A, ADAMS, James B

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X-ray photoemission analysis of CS2 treated polycrystalline Cu(In, Ga)Se2 von NELSON, A. J, GREGORATTI, L, CHAGAROV, E, LONZA, D, MARSI, M, KISKINOVA, M

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Spectromicroscopic investigation of (NH4)2S treated polycrystalline Cu(In1−xGax)Se2 von Nelson, A.J., Gregoratti, L., Chagarov, E., Lonza, D., Marsi, M., Kiskinova, M.

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Spectromicroscopic investigation of (NH 4) 2S treated polycrystalline Cu(In 1− xGa x)Se 2 von Nelson, A.J., Gregoratti, L., Chagarov, E., Lonza, D., Marsi, M., Kiskinova, M.

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Mechanism of dangling bond elimination on As-rich InGaAs surface von Melitz, W., Chagarov, E., Kent, T., Droopad, R., Ahn, J., Long, R., McIntyre, P. C., Kummel, A. C.

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Atomic Imaging of the Irreversible Sensing Mechanism of NO2 Adsorption on Copper Phthalocyanine von Park, Jun Hong, Royer, James E, Chagarov, Evgeniy, Kaufman-Osborn, Tobin, Edmonds, Mary, Kent, Tyler, Lee, Sangyeob, Trogler, William C, Kummel, Andrew C

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Atomic Imaging of the Irreversible Sensing Mechanism of NO 2 Adsorption on Copper Phthalocyanine von Park, Jun Hong, Royer, James E., Chagarov, Evgeniy, Kaufman-Osborn, Tobin, Edmonds, Mary, Kent, Tyler, Lee, Sangyeob, Trogler, William C., Kummel, Andrew C.

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