Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs von Paz de Araujo, C. A., Celinska, Jolanta, McWilliams, Chris R., Shifren, Lucian, Yeric, Greg, Huang, X. M. Henry, Suryavanshi, Saurabh Vinayak, Rosendale, Glen, Afanas’ev, Valeri, Marino, Eduardo C., Narayan, Dushyant Madhav, Dessau, Daniel S.

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Material and process optimization of correlated electron random access memories von Celinska, Jolanta, McWilliams, Christopher, Paz de Araujo, Carlos, Xue, Kan-Hao

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UNIVERSAL NON-POLAR SWITCHING IN CARBON-DOPED TRANSITION METAL OXIDES (TMO) AND POST TMO von Paz de Araujo, Carlos A, Celinska, Jolanta, McWilliams, Chris R, Shifren, Lucian, Yeric, Greg, Henry Huang, X.M, Suryavanshi, Saurabh Vinayak, Rosendale, Glen, Afanasiev, Valeri, Marino, Eduardo C, Narayan, Dushyant Madhav, Dessau, Daniel S

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A non-filamentary model for unipolar switching transition metal oxide resistance random access memories von Xue, Kan-Hao, Paz de Araujo, Carlos A., Celinska, Jolanta, McWilliams, Christopher

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A comparative study on Bi4Ti3O12 and Bi3.25La0.75Ti3O12 ferroelectric thin films derived by metal organic decomposition von Xue, Kan-Hao, Paz de Araujo, Carlos A., Celinska, Jolanta

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A comparative study on Bi 4 Ti 3 O 12 and Bi 3.25 La 0.75 Ti 3 O 12 ferroelectric thin films derived by metal organic decomposition von Xue, Kan-Hao, Paz de Araujo, Carlos A., Celinska, Jolanta

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Low temperature preparation of ferroelectric bismuth titanate thin films von Xue, Kan-Hao, Celinska, Jolanta, Paz de Araujo, Carlos A.

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Device characterization of correlated electron random access memories von McWilliams, Christopher R., Celinska, Jolanta, Paz de Araujo, Carlos A., Xue, Kan-Hao

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Enhanced pyroelectric sensitivity using ferroelectric active mode detection von Mantese, Joseph V., Micheli, Adolph L., Schubring, Norman W., Putty, Michael W., Thompson, Margarita P., Chang, Scott, Troxell, John R., Oberdier, Larry, Celinska, Jolanta, Paz de Araujo, Carlos

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SEMICONDUCTING FERROELECTRIC DEVICE von PAZ DE ARAUJO, Carlos, CELINSKA, Jolanta, SHIFREN, Lucian

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SEMICONDUCTING FERROELECTRIC DEVICE von PAZ DE ARAUJO, Carlos, CELINSKA, Jolanta, SHIFREN, Lucian

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Fabricating correlated electron material (CEM) devices von Paz de Araujo, Carlos Alberto, Celinska, Jolanta Bozena, Shifren, Lucian

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Semiconducting Ferroelectric Device von Celinska, Jolanta B, Paz de Araujo, Carlos A, Shifren, Lucian

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Correlated electron material (CEM) device von Paz de Araujo, Carlos Alberto, Celinska, Jolanta Bozena, Shifren, Lucian

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Correlated electron device formed via conversion of conductive substrate to a correlated electron region von McWilliams, Christopher Randolph, Paz de Araujo, Carlos Alberto, Celinska, Jolanta Bozena, Reid, Kimberly Gay, Shifren, Lucian

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METHOD FOR THE MANUFACTURE OF A CORRELATED ELECTRON MATERIAL DEVICE von CELINSKA, Jolanta, ARAUJO, Carlos, SHIFREN, Lucian

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Semiconducting Ferroelectric Device with Silicon Doped Electrode von Celinska, Jolanta B, Paz de Araujo, Carlos A, Suryavanshi, Saurabh Vinayak, Shifren, Lucian

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Formation of correlated electron material (CEM) devices with restored sidewall regions von He, Ming, Besser, Paul Raymond, Celinska, Jolanta Bozena

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Universal Non-Polar Switching in Carbon-doped Transition Metal Oxides (TMOs) and Post TMOs von C A Paz de Araujo, Celinska, Jolanta, McWilliams, Chris R, Shifren, Lucian, Yeric, Greg, Huang, X M Henry, Suryavanshi, Saurabh Vinayak, Rosendale, Glen, Afanas'ev, Valeri, Marino, Eduardo C, Narayan, Dushyant Madhav, Dessau, Daniel S

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FABRICATING CORRELATED ELECTRON MATERIAL (CEM) DEVICES von CELINSKA, Jolanta, ARAUJO, Carlos, SHIFREN, Lucian

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