Low-frequency antiferromagnetic resonance of RbMnF 3 near the Néel temperature von Castner, T.G.

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Critical conductivity for semiconductor–metal alloys von Castner, T.G.

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Low-frequency antiferromagnetic resonance of RbMnF3 near the Néel temperature von CASTNER, T. G

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Critical broadening of the EPR line width in MnF2 von Seehra, Mohindar S., Castner, T.G.

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Zero-bias resistance of grain boundaries in neutron-transmutation-doped polycrystalline silicon von Seager, C. H., Castner, T. G.

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Variable-range hopping and the hall coefficient in Si:As von Koon, D.W., Castner, T.G.

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Microwave conductivity measurements on insulating Si:P near the metal-insulator transition von Migliuolo, M., Castner, T.G.

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1a-F-9 半導体表面での分子の非輻射減衰 von 林, 啓介, R.W., Boyd, T.G., Castner

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Quenching of molecular fluorescence near the surface of a semiconductor von Hayashi, T., Castner, T.G., Boyd, Robert W.

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Critical broadening of the EPR line width in MnF 2 von Seehra, Mohindar S., Castner, T.G.

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Self-consistent calculation of the enhanced donor polarizability below the insulator-metal transition von Castner, T.G.

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The electronic structure of V-centers von Castner, Theodore G., Känzig, Werner

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Polarizabilities of shallow donors in silicon von Bethin, J., Castner, T.G., Lee, N.K.

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The low temperature magnetoresistance of arsenic-doped silicon near the metal—Insulator transition von Shafarman, W.N., Castner, T.G., Brooks, J.S., Martin, K.P., Naughton, M.J.

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Relativistic corrections and very small g-shifts in solids von Castner, T.G., Tan, H.S.

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Polarizability of shallow donors in silicon - A reply von Castner, T.G., Lee, N.K.

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