Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices von García, H, Vinuesa, G, García-Ochoa, E, Aguirre, F L, González, M B, Jiménez-Molinos, F, Campabadal, F, Roldán, J B, Miranda, E, Dueñas, S, Castán, H

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Controlling the intermediate conductance states in RRAM devices for synaptic applications von García, H., Ossorio, O.G., Dueñas, S., Castán, H.

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Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction von Jiménez-Molinos, F., Vinuesa, G., García, H., Tarre, A., Tamm, A., Kalam, K., Kukli, K., Dueñas, S., Castán, H., González, M. B., Campabadal, F., Roldán, J. B.

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Dynamics of set and reset processes on resistive switching memories von Dueñas, S., Castán, H., Ossorio, O.G., García, H.

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Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters von Castán, H., Dueñas, S., García, H., Ossorio, O. G., Domínguez, L. A., Sahelices, B., Miranda, E., González, M. B., Campabadal, F.

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Dynamics of set and reset processes in HfO2 -based bipolar resistive switching devices von Vinuesa, G., García, H., González, M.B., Campabadal, F., Castán, H., Dueñas, S.

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A physically based model for resistive memories including a detailed temperature and variability description von González-Cordero, G., González, M.B., García, H., Campabadal, F., Dueñas, S., Castán, H., Jiménez-Molinos, F., Roldán, J.B.

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Role of proteoglycans on skin ageing: a review von Ruiz Martínez, M.A., Peralta Galisteo, S., Castán, H., Morales Hernández, M.E.

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Experimental verification of intermediate band formation on titanium-implanted silicon von Castán, H., Pérez, E., García, H., Dueñas, S., Bailón, L., Olea, J., Pastor, D., García-Hemme, E., Irigoyen, M., González-Díaz, G.

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Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications von García, H., González, M. B., Mallol, M. M., Castán, H., Dueñas, S., Campabadal, F., Acero, M. C., Sambuco Salomone, L., Faigón, A.

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Design, development and characterization of buccal bioadhesive films of Doxepin for treatment of odontalgia von Castán, H., Ruiz, M.A., Clares, B., Morales, M.E.

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The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications von Dueñas, S., Castán, H., García, H., Ossorio, O. G., Domínguez, L. A., Seemen, H., Tamm, A., Kukli, K., Aarik, J.

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Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications von Pérez, E., Castán, H., García, H., Dueñas, S., Bailón, L., Montero, D., García-Hernansanz, R., García-Hemme, E., Olea, J., González-Díaz, G.

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Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals von García, H., Castán, H., Dueñas, S., García-Hemme, E., García-Hernansaz, R., Montero, D., González-Díaz, G.

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A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications von Pérez, E., Dueñas, S., Castán, H., García, H., Bailón, L., Montero, D., García-Hernansanz, R., García-Hemme, E., Olea, J., González-Díaz, G.

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Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices von Dueñas, S., Castán, H., García, H., Miranda, E., Gonzalez, M.B., Campabadal, F.

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Characterization of deep level defects present in mono-like, quasi-mono and multicrystalline silicon solar substrates von Pérez, E, García, H, Castán, H, Dueñas, S

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Influence of growth and annealing temperatures on the electrical properties of Nb2O5-based MIM capacitors von García, H, Castán, H, Perez, E, Dueñas, S, Bailón, L, Blanquart, T, Niinistö, J, Kukli, K, Ritala, M, Leskelä, M

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Charge and current hysteresis in dysprosium-doped zirconium oxide thin films von Castán, H., Dueñas, S., García, H., Bailón, L., Kukli, K., Tamm, A., Kozlova, J., Aarik, J., Mizohata, K.

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Electrical Properties of Atomic-Layer-Deposited Thin Gadolinium Oxide High-k Gate Dielectrics von Dueñas, S., Castán, H., García, H., Gómez, A., Bailón, L., Kukli, K., Hatanpää, T., Lu, J., Ritala, M., Leskelä, M.

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