SThM Temperature Mapping and Nonlinear Thermal Resistance Evolution With Bias on AlGaN/GaN HEMT Devices von Aubry, R., Jacquet, J.-C., Weaver, J., Durand, O., Dobson, P., Mills, G., di Forte-Poisson, M.-A., Cassette, S., Delage, S.-L.

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Nonlinear and bistable behavior of an ultrahigh-Q GaAs photonic crystal nanocavity von Weidner, Evelin, Combrié, Sylvain, de Rossi, Alfredo, Tran, Nguyen-Vi-Quynh, Cassette, Simone

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Broadband and Efficient Diffraction von Ribot, Céline, Lee, Mane‐Si Laure, Collin, Stéphane, Bansropun, Shailendra, Plouhinec, Patrick, Thenot, Didier, Cassette, Simone, Loiseaux, Brigitte, Lalanne, Philippe

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Achievement of ultrahigh quality factors in GaAs photonic crystal membrane nanocavity von Weidner, Evelin, Combrié, Sylvain, Tran, Nguyen-Vi-Quynh, De Rossi, Alfredo, Nagle, Julien, Cassette, Simone, Talneau, Anne, Benisty, Henri

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Simulations of radical and ion fluxes on a wafer in a Cl2/Ar inductively coupled plasma discharge: Confrontation with GaAs and GaN etch experiments von Despiau-Pujo, Emilie, Chabert, Pascal, Bansropun, Shailendra, Thénot, Didier, Plouhinec, Patrick, Cassette, Simone

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Simulations of radical and ion fluxes on a wafer in a Cl 2 / Ar inductively coupled plasma discharge: Confrontation with GaAs and GaN etch experiments von Despiau-Pujo, Emilie, Chabert, Pascal, Bansropun, Shailendra, Thénot, Didier, Plouhinec, Patrick, Cassette, Simone

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Detailed analysis by Fabry-Perot method of slab photonic crystal line-defect waveguides and cavities in aluminium-free material system von Combrié, S, Weidner, E, DeRossi, A, Bansropun, S, Cassette, S, Talneau, A, Benisty, H

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Investigation of group delay, loss, and disorder in a photonic crystal waveguide by low-coherence reflectometry von Combrié, Sylvain, Tran, Nguyen-Vi-Quynh, Weidner, Evelin, De Rossi, Alfredo, Cassette, Simone, Hamel, Philippe, Jaouën, Yves, Gabet, Renaud, Talneau, Anne

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Nonlinear and bistable behavior of an ultrahigh- Q GaAs photoniccrystal nanocavity von Weidner, Evelin, Combrié, Sylvain, de Rossi, Alfredo, Tran, Nguyen-Vi-Quynh, Cassette, Simone

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Process for fabricating a stabilized bipolar transistor with electric insulating elements von CASSETTE, SIMONE, HENKEL, ACHIM, DELAGE, SYLVAIN, SALZENSTEIN, PATRICE

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Heteroübergang-Bipolartransistor mit obenliegendem Kollektor und dessen Herstellungsverfahren von CASSETTE, SIMONE, DELAGE, SYLVAIN, FLORIOT, DIDIER, GIRARDOT, ARNAUD

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Bipolar transistor with upper heterojunction collector and method for making the same von CASSETTE, SIMONE, DELAGE, SYLVAIN, FLORIOT, DIDIER, GIRARDOT, ARNAUD

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Bipolar transistor with upper heterojunction collector and method for making same von CASSETTE SIMONE, DELAGE SYLVAIN, GIRARDOT ARNAUD, FLORIOT DIDIER

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Bipolar transistor with upper heterojunction collector and method for making same von Delage, Sylvain, Cassette, Simone, Floriot, Didier, Girardot, Arnaud

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Ätzverfahren für Heterostrukturen aus Materialien der III-V Gruppe von CASSETTE, SIMONE, DELAGE, SYLVAIN, BLANCK, HERVE

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Etching method for heterostructure of III-V compound material von CASSETTE, SIMONE, DELAGE, SYLVAIN, BLANCK, HERVE

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Optimization of an inductively coupled plasma etching process of GaInP∕GaAs based material for photonic band gap applications von Combrié, S., Bansropun, S., Lecomte, M., Parillaud, O., Cassette, S., Benisty, H., Nagle, J.

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Thermal capacity for electronic component operating in long pulses von DUIN JEAN-PASCAL, CASSETTE SIMONE, DELAGE SYLVAIN, FLORIOT DIDIER

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Thermal capacity for electronic component operating in long pulses von Floriot, Didier, DeLage, Sylvain, Cassette, Simone, Duchemin, Jean-Pascal

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Bipolar transistor with upper heterojunction collector and method for making same von Cassette, Simone, Delage, Sylvain, Floriot, Didier, Girardot, Arnaud

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