Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K von Mariniello, Genaro, Barraud, Sylvain, Vinet, Maud, Cassé, Mikael, Faynot, Olivier, Calcade, Jaime, Antonio Pavanello, Marcelo

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Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures von Prates, Rhaycen R., Barraud, Sylvain, Casse, Mikael, Vinet, Maud, Faynot, Olivier, Pavanello, Marcelo A.

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Electrical characterization of stacked SOI nanowires at low temperatures von Rodrigues, Jaime C., Mariniello, Genaro, Cassé, Mikael, Barraud, Sylvain, Vinet, Maud, Faynot, Olivier, Pavanello, Marcelo A.

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Ultra-Low-Voltage UTBB-SOI-Based, Pseudo-Static Storage Circuits for Cryogenic CMOS Applications von Nibhanupudi, S. S. Teja, Sundara Raman, Siddhartha Raman, Casse, Mikael, Hutin, Louis, Kulkarni, Jaydeep P.

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Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage... von Ohata, Akiko, Cristoloveanu, Sorin, Cassé, Mikael

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On the Zero Temperature Coefficient in FD-SOI MOSFETs von Catapano, Edoardo, Mota Frutuoso, Tadeu, Casse, Mikael, Gérard, Ghibaudo

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Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP von Ferrandis, Philippe, Billaud, Mathilde, Duvernay, Julien, Martin, Mickael, Arnoult, Alexandre, Grampeix, Helen, Cassé, Mikael, Boutry, Hervé, Baron, Thierry, Vinet, Maud, Reimbold, Gilles

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Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width von Coquand, R., Casse, M., Barraud, S., Cooper, D., Maffini-Alvaro, V., Samson, M., Monfray, S., Boeuf, F., Ghibaudo, G., Faynot, O., Poiroux, T.

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On the mobility in high- κ/metal gate MOSFETs: Evaluation of the high- κ phonon scattering impact von Weber, Olivier, Cassé, Mikael, Thevenod, Laurent, Ducroquet, Frédérique, Ernst, Thomas, Deleonibus, Simon

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Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K von Cassé, Mikaël, Cardoso Paz, Bruna, Ghibaudo, Gérard, Poiroux, Thierry, Vincent, Emmanuel, Galy, Philippe, Juge, André, Gaillard, Fred, de Franceschi, Silvano, Meunier, Tristan, Vinet, Maud

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Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2K von Casse, Mikael, Paz, Brune Cardoso, Ghibaudo, Gerard, Poiroux, Thierry, Vincent, Emmanuel, Galy, Philippe, Juge, Andre, Gaillard, Fred, de Franceschi, Silvano, Meunier, Tristan, Vinet, Maud

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Experimental Investigation of the Tunneling Injection Boosters for Enhanced ION ETSOI Tunnel FET von VILLALON, Anthony, LE ROYER, Cyrille, CASSE, Mikaël, COOPER, David, HARTMANN, Jean-Michel, ALLAIN, Fabienne, TABONE, Claude, ANDRIEU, François, CRISTOLOVEANU, Sorin

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Experimental Investigation of Hole Transport in Strained Si1―xGex/SOI pMOSFETs: Part II—Mobility and High-Field Transport in Nanoscaled PMOS von CASSE, Mikaël, HUTIN, Louis, LE ROYER, Cyrille, COOPER, David, HARTMANN, Jean-Michel, REIMBOLD, Gilles

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Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures von de Souza, Michelly, Cerdeira, Antonio, Estrada, Magali, Cassé, Mikaël, Barraud, Sylvain, Vinet, Maud, Faynot, Olivier, Pavanello, Marcelo A.

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Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications von Cardoso Paz, Bruna, Casse, Mikael, Theodorou, Christoforos, Ghibaudo, Gerard, Kammler, Thorsten, Pirro, Luca, Vinet, Maud, de Franceschi, Silvano, Meunier, Tristan, Gaillard, Fred

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A New Method for Series Resistance Extraction of Nanometer MOSFETs von Trevisoli, Renan, Trevisoli Doria, Rodrigo, de Souza, Michelly, Barraud, Sylvain, Vinet, Maud, Casse, Mikael, Reimbold, Gilles, Faynot, Olivier, Ghibaudo, Gerard, Pavanello, Marcelo Antonio

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Electrical properties of metal/Al 2 O 3 /In 0.53 Ga 0.47 As capacitors grown on InP von Ferrandis, Philippe, Billaud, Mathilde, Duvernay, Julien, Martin, Mickaël, Arnoult, Alexandre, Grampeix, Helen, Casse, Mikael, Boutry, Hervé, Baron, Thierry, Vinet, Maud, Reimbold, Gilles

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Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures von de Souza, Michelly, Cerdeira, Antonio, Estrada, Magali, Cassé, Mikaël, Barraud, Sylvain, Vinet, Maud, Faynot, Olivier, Pavanello, Marcelo A.

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Characterization and role of deep traps on the radio frequency performances of high resistivity substrates von Vandermolen, Eric, Ferrandis, Philippe, Allibert, Frédéric, Nabet, Massinissa, Rack, Martin, Raskin, Jean-Pierre, Cassé, Mikaël

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(Invited) Cryogenic Electronics for Quantum Computing ICs: What Can Bring FDSOI von Casse, Mikael, Cardoso Paz, Bruna, Bergamaschi, Flavio, Ghibaudo, Gérard, Balestra, Francis, Vinet, Maud

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