700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's) von Agarwal, A.K., Casady, J.B., Rowland, L.B., Seshadri, S., Siergiej, R.R., Valek, W.F., Brandt, C.D.

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Hydrogen interaction with defects and impurities in 6H-SiC von KOSHKA, Yaroslav, DUFRENE, Janna B, CASADY, Jeffrey B

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Demonstration of SiC Vertical Trench JFET Reliability von Matocha, Kevin, Chatty, Kiran, Speer, Kevin M., Sheridan, David C., Casady, Jeff B., Bondarenko, Volodymyr

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900V, 1.46mOhm-cm2 4H-SiC Depletion Mode Vertical JFET von Sheridan, David C., Schrader, Robin, Casady, Jeffrey B., Bondarenko, Volodymyr, Chatty, Kiran

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900V, 1.46mOhm-cm super(2) 4H-SiC Depletion Mode Vertical JFET von Chatty, Kiran, Sheridan, David C, Bondarenko, Volodymyr, Schrader, Robin, Casady, Jeffrey B

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SiC JFET Power Modules for Reliable 250°C Operation von Autry, Tracy, Aguirre, Rizal, Lee, Victor, Palmer, Michael J., Scofield, James, Sheridan, David C., Casady, Jeff B., Johnson, R. Wayne

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Recent Advances in VJFETs at SemiSouth von Chatty, Kiran, Sheridan, David C., Bondarenko, Vladomyr, Schrader, Robin, Speer, Kevin, Casady, Jeffrey B.

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Reverse conduction properties of vertical SiC trench JFETs von Sheridan, D. C., Chatty, K., Bondarenko, V., Casady, J. B.

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4H–SiC p–n diodes and gate turnoff thyristors for high-power, high-temperature applications von Agarwal, Anant K, Seshadri, Suresh, MacMillan, Michael, Mani, Sita S, Casady, Jeffrey, Sanger, Phillip, Shah, Pankaj

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Vertical junction field effect transistors with improved thermal characteristics and methods of making von CASADY JANNA, SHERIDAN DAVID, CASADY JEFFREY, CHATTY KIRAN, RITENOUR ANDREW

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VERTICAL JUNCTION FIELD EFFECT TRANSISTORS WITH IMPROVED THERMAL CHARACTERISTICS AND METHODS OF MAKING von RITENOUR, ANDREW, SHERIDAN, DAVID, CHATTY, KIRAN, CASADY, JANNA, CASADY, JEFFREY

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VERTICAL JUNCTION FIELD EFFECT TRANSISTORS WITH IMPROVED THERMAL CHARACTERISTICS AND METHODS OF MAKING von RITENOUR, ANDREW, SHERIDAN, DAVID, CHATTY, KIRAN, CASADY, JANNA, CASADY, JEFFREY

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VERTICAL JUNCTION FIELD EFFECT TRANSISTORS WITH IMPROVED THERMAL CHARACTERISTICS AND METHODS OF MAKING von CASADY JANNA, SHERIDAN DAVID, CASADY JEFFREY, CHATTY KIRAN, RITENOUR ANDREW

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Recent Advances in VJFETs at SemiSouth von Chatty, Kiran, Sheridan, David C., Bondarenko, Vladomyr, Schrader, Robin, Speer, Kevin, Casady, Jeffrey B.

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Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications von CASADY JEFFREY B, MAZZOLA MICHAEL

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Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications von Casady, Jeffrey B, Mazzola, Michael

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SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI-INSULATING EPITAXY FOR HIGH-SPEED, HIGH-POWER APPLICATIONS von MAZZOLA, MICHAEL, CASADY, JEFFREY, B

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Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors von MERRETT, JOSEPH N, SANKIN, IGOR, CASADY, JEFFREY. B

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Silicon Carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications von CASADY JEFFREY B, MAZZOLA MICHAEL

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VERFAHREN ZUR HERSTLLUNG SELBSTAUSGERICHTETEN TRANSISTORTOPOLOGIEN IN SILIZIUMKARBID DURCH VERWENDUNG SELEKTIVER EPITAXIE von CARTER, GEOFFREY, MAZZOLA, MICHAEL, CASADY, JEFFREY, SANKIN, IGOR, KOSHKA, YAROSLAV

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