Increase of SiC Substrate Resistance Induced by Annealing von Woodin, Richard L., Witt, T., Schmitt, Erwin, Dolny, Gary M., Shovlin, J., Casady, Janna R. B., Sasahara, P., Straubinger, Thomas L., Casady, Jeff B., Weber, Arnd Dietrich

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High-Temperature Operation of 50 A (1600 A/cm2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications von Cheng, Lin, Scofield, James D., Martin, P., Casady, Janna R. B., Sheridan, David C., Mazzola, Michael S., Sankin, Igor, Casady, Jeff B., Bondarenko, Volodymyr

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High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications von Cheng, Lin, Scofield, James D., Martin, P., Gray, R., Tian, G., Kelly, R.L., Casady, Janna R. B., Sheridan, David C., Morrison, S., Mazzola, Michael S., Casady, Jeff B., Bondarenko, Volodymyr

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A Review of SiC Power Switch: Achievements, Difficulties and Perspectives von Merrett, J. Neil, Casady, Janna R. B., Sankin, Igor, Casady, Jeff B., Draper, W.A.

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Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs von Merrett, J. Neil, Cressler, J.D., Krishnan, Bharat, Cheng, Lin, Bondarenko, V., Sutton, A.P., Seale, D., Koshka, Yaroslav, Mazzola, Michael S., Sankin, Igor, Casady, Jeff B., Williams, John R.

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High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC von Casady, Janna R. B., Das, Hrishikesh, Casady, Jeff B., Sunkari, Swapna G., Oldham, Timothy

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High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching von Saddow, Stephen E., Isaacs-Smith, Tamara, Mazzola, Michael S., Casady, Jeff B., Williams, John R., Cooper, James A., Capano, Michael A., Hsieh, A.J.

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Demonstration of SiC Vertical Trench JFET Reliability von Matocha, Kevin, Chatty, Kiran, Speer, Kevin M., Sheridan, David C., Casady, Jeff B., Bondarenko, Volodymyr

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A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices von Sheridan, David C., Casady, Jeff B., Kelley, Robin L., Bondarenko, Volodymyr, Ritenour, Andrew

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SiC JFET Power Modules for Reliable 250°C Operation von Autry, Tracy, Aguirre, Rizal, Lee, Victor, Palmer, Michael J., Scofield, James, Sheridan, David C., Casady, Jeff B., Johnson, R. Wayne

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Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules von Sheridan, David C., Casady, Jeff B., Kelley, Robin L., Bondarenko, Volodymyr, Ritenour, Andrew

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Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers von Koshka, Yaroslav, Das, Hrishikesh, Casady, Janna R. B., Hoff, Carl, Casady, Jeff B., Sunkari, Swapna G.

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Performance of 15 mm2 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current von Sheridan, David C., Casady, Jeff B., Bondarenko, Volodymyr, Ritenour, Andrew

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4H-SiC Gate Turn-Off (GTO) Thyristor Development von Barrows, J., Sanger, P.A., Piccone, D., Agarwal, Anant K., Rowland, L.B., Seshadri, S., Casady, Jeff B., Mani, S., Siergiej, R.R., Brandt, C.D.

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SiC Lateral Trench JFET for Harsh-Environment Wireless Systems von Schupbach, Marcelo, Fraley, John, Sheridan, David C., Mazzola, Michael S., Sankin, Igor, Casady, Jeff B., Bondarenko, Volodymyr

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High-Frequency SiC MESFETs with Silicon Dioxide/Silicon Nitride Passivation von Kaminsky, Ed, Matocha, Kevin, Casady, Jeff B., Vertiatchikh, Alexey

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SiC Smart Power JFET Technology for High-Temperature Applications von Bondarenko, V., Sankin, Igor, Kelley, Robin L., Casady, Jeff B.

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High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor von Zhang, Jie, Koshka, Yaroslav, Hoff, Carl, Mazzola, Janice, Casady, Jeff B.

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Inherently Safe Resonant Reset Forward Converter Using a Bias-Enhanced SiC JFET von Mazzola, Michael S., Kelley, Robin L., Casady, Jeff B., Brignac, T.

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Highly Uniform SiC Epitaxy for MESFET Fabrication von Hoff, Carl, Zhang, Jie, Casady, Janna R. B., Mazzola, Janice, Rivas, C., Mazzola, Michael S., Matocha, Kevin, Romano, Esteban, Casady, Jeff B.

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