Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy von de Castro, M.P.P., von Zuben, A.A., Frateschi, N.C., Santo, L.L.E., Galvão, D.S., Bettini, J., de Carvalho, M.M.G.

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Anisotropic unstable and stable growth of homoepitaxial (1 0 0) InP films von Bortoleto, J.R.R, Cotta, M.A, de Carvalho, M.M.G

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Analysis of Be doping of InGaP lattice matched to GaAs von Bettini, J, de Carvalho, M.M.G, Cotta, M.A, Pudenzi, M.A.A, Frateschi, N.C, Silva Filho, A, Cardoso, L.P, Landers, R

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A simple technique for Czochralski growth of GaSb single crystals from scum-free melt von de Oliveira, C.E.M., de Carvalho, M.M.G.

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On the onset of InAs islanding on InP: influence of surface steps von Cotta, M.A., Mendonça, C.A.C., Meneses, E.A., de Carvalho, M.M.G.

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Evidence of formation of Si-C bonds during growth of Si-doped III-V semiconductor compounds von Bettini, J., de Carvalho, M. M. G

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Surface morphologies of Be-doped homoepitaxial InP films von Cotta, M.A., de Carvalho, M.M.G., Pudenzi, M.A.A., Landers, K.M.I., de Souza, C.F., Martins, R.B., Landers, R., Teschke, O.

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Role of V/III ratio on atomic ordering and surface morphology of InGaP layers grown by chemical beam epitaxy von Bettini, J., de Carvalho, M.M.G., Cotta, M.A., Ugarte, D.

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Vertical stacks of InAs quantum wires in an InP matrix von Gutiérrez, H.R., Cotta, M.A., de Carvalho, M.M.G.

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Residual carbon and carrier concentration in InGaP layers grown by chemical beam epitaxy von Bettini, J., de Carvalho, M.M.G., Pudenzi, M.A.A., Laureto, E., Meneses, E.A.

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Growth of Be-doped homoepitaxial GaAs films on rough substrates von Coluci, V.R, Cotta, M.A, de Carvalho, M.M.G

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Equilibrium shape and nucleation on InP(0 0 1) surfaces: effect of surface steps von Soares, L.S.M, Cotta, M.A, Mendonça, C.A.C, Ito-Landers, K.M, de Carvalho, M.M.G

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Characterization of InP grown by LEC using glassy carbon, silica and PBN crucibles von de Oliveira, C.E.M., de Carvalho, M.M.G., Mendonça, C.A.C., Miskys, C.R., Guadalupi, G.M., Battagliarin, M., Bueno, M.I.M.S.

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Growth of InP by LEC using glassy carbon crucibles von de Oliveira, C.E.M., de Carvalho, M.M.G., Miskys, C.R.

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Monte Carlo simulation study on the flow conditions of a vacuum chemical epitaxy system von Cotta, M.A., de Carvalho, M.M.G.

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Compensation in heavily carbon-doped GaAlAs grown by vacuum chemical epitaxy von Cotta, M.A., de Carvalho, M.M.G.

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Growth of InP single crystals by liquid encapsulated Czochralski (LEC) using glassy-carbon crucibles von de Oliveira, C.E.M., Miskys, C.R., de Carvalho, M.M.G.

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Photoluminescence of GaAs films grown by vacuum chemical epitaxy von BERNUSSI, A. A, BARRETO, C. L, CARVALHO, M. M. G, MOTISUKE, P

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Field effect transistor with 170 nm gate fabricated by atomic force lithography von Panepucci, R.R., Bettini, J., Cotta, M.A., Carvalho, M.M.G.

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Growth of InP layers by vacuum chemical epitaxy (VCE) von De Carvalho, M.M.G., Cotta, M.A., Camilo, A., Ito, K.M.

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