In-situ dual-wavelength and ex-situ spectroscopic ellipsometry studies of strained SiGe epitaxial layers and multi-quantum well structures von Pickering, C., Carline, R.T., Robbins, D.J., Leong, W.Y., Gray, D.E., Greef, R.

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Characterization of oxide layers on GaAs substrates von ALLWOOD, D. A, CARLINE, R. T, MASON, N. J, PICKERING, C, TANNER, B. K, WALKER, P. J

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Observation of graded interfaces in strained Si/Si 1−xGe x layers (0.17 < x < 0.23) using photoreflectance von Hall, D.J., Carline, R.T.

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Resonant cavity longwave SiGe-Si photodetector using a buried silicide mirror von Carline, R.T., Nayar, V., Robbins, D.J., Stanaway, M.B.

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Observation of graded interfaces in strained Si/Si 1−x Ge x layers (0.17 < x < 0.23) using photoreflectance von Hall, D.J., Carline, R.T.

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Real-time control of layer thickness in LPCVD Si/Si. 88Ge. 12 HBT structures von Hope, D.A.O, Pickering, C, Carline, R.T, Leong, W.Y, Robbins, D.J

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In situ optical monitoring for SiGe epitaxy von Robbins, D.J, Pickering, C, Russell, J, Carline, R.T, Dann, A.W, Marrs, A.D, Glasper, J.L

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Optical properties of bonded silicon silicide on insulator (S 2OI): a new substrate for electronic and optical devices von Nayar, V, Russell, J, Carline, R.T, Pidduck, A.J, Quinn, C, Nevin, A, Blackstone, S

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Real-time photo-spectroscopic ellipsometry measurement of electric field and composition in semiconductors von Carline, R.T., Russell, J., Hosea, T.J.C., Thomas, P.J.S., Pickering, C.

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Real-time control of layer thickness in LPCVD Si/Si.88Ge.12 HBT structures von Hope, D.A.O, Pickering, C, Carline, R.T, Leong, W.Y, Robbins, D.J

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Photoreflectance of strained Si 1-xGe x epilayers (0.07≤ x≥0.26) and comparison with spectroscopic ellipsometry von Carline, R.T., Pickering, C., Hosea, T.J.C., Robbins, D.J.

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Photoreflectance of strained Si1-xGex epilayers (0.07≤x≤0.26) and comparison with spectroscopic ellipsometry von CARLINE, R. T, PICKERING, C, HOSEA, T. J. C, ROBBINS, D. J

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SiGe materials characterized by high resolution Raman spectroscopy and spectroscopic ellipsometry von Evrard, P., Stehle, J.L., Pickering, C., Carline, R.T.

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The surface roughness and optical properties of high quality Si epitaxial layers von Nayar, V., Pickering, C., Pidduck, A.J., Carline, R.T., Leong, W.Y., Robbins, D.J.

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Non-destructive characterization of III–V alloy multilayer structures using spectroscopic ellipsometry von Pickering, C., Carline, R.T., Garawal, N.S., Stehlé, J.L., Piel, J.P., Blunt, R., Kirby, P.

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A vertical cavity longwave infrared SiGe/Si photodetector using a buried silicide mirror von Carline, R.T., Hope, D.A.O., Nayar, V., Robbins, D.J., Stanaway, M.B.

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Self-consistent charge control modelling of InP based HFET structures von Morton, C.G., Carline, R.T., Allsopp, D.W.E.

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Spectroscopic ellipsometry of Si1-xGex multi-quantum wells von Carline, R.T., Pickering, C., Calcott, P., Robbins, D.J., Leong, W.Y., Pitt, A.D., Barnett, S.J., Cullis, A.G.

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