Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress von Brunel, L., Lambert, B., Mezenge, P., Bataille, J., Floriot, D., Grünenpütt, J., Blanck, H., Carisetti, D., Gourdel, Y., Malbert, N., Curutchet, A., Labat, N.

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Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations von Faqir, M., Bouya, M., Malbert, N., Labat, N., Carisetti, D., Lambert, B., Verzellesi, G., Fantini, F.

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Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements von Karboyan, S., Tartarin, J.G., Rzin, M., Brunel, L., Curutchet, A., Malbert, N., Labat, N., Carisetti, D., Lambert, B., Mermoux, M., Romain-Latu, E., Thomas, F., Bouexière, C., Moreau, C.

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Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques von Bouya, M., Malbert, N., Labat, N., Carisetti, D., Perdu, P., Clément, J.C., Lambert, B., Bonnet, M.

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Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test von Lambert, B., Labat, N., Carisetti, D., Karboyan, S., Tartarin, J.G., Thorpe, J., Brunel, L., Curutchet, A., Malbert, N., Latu-Romain, E., Mermoux, M.

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Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques von Ben Naceur, W., Malbert, N., Labat, N., Frémont, H., Carisetti, D., Clément, J.-C., Muraro, J.-L., Bonnet, B.

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Analysis and path localization of gate current in AlGaN/GaN HEMTs using low frequency noise measurements and Optical Beam Induced Resistance Change technique von Karboyan, S., Tartarin, J. G., Carisetti, D., Lambert, B.

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Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC von Bouya, M., Carisetti, D., Malbert, N., Labat, N., Perdu, P., Clément, J.C., Bonnet, M., Pataut, G.

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Electrical Runaway in AlGaN/GaN HEMTs: Physical Mechanisms and Impact on Reliability von Brunel, L., Lambert, B., Carisetti, D., Malbert, Nathalie, Curutchet, A., Labat, N.

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Backside failure analysis of GaAs MMIC ASICs von Beaudoin, F., Carisetti, D., Clement, J. C., Desplats, R., Perdu, P.

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Gate defects in AlGaN/GaN HEMTs revealed by low frequency noise measurements von Tartarin, J. G., Karboyan, S., Carisetti, D., Lambert, B.

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Backside Defect Localizations and Revelations Techniques on Gallium Arsenide (GaAs) Devices von Beaudoin, F., Carisetti, D., Desplats, R., Perdu, P., Lewis, D., Clement, J.C.

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Evidence of relationship between mechanical stress and leakage current in AIGaN/GaN transistor after storage test von LAMBERT, B, LABAT, N, MERMOUX, M, CARISETTI, D, KARBOYAN, S, TARTARIN, J. G, THORPE, J, BRUNEL, L, CURUTCHET, A, MALBERT, N, LATU-ROMAIN, E

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PROCEDE DE REALISATION PAR AUTOALIGNEMENT, D'UN DISPOSITIF SEMICONDUCTEUR INTEGRE, COMPRENANT AU MOINS LA FORMATION D'UN PREMIER CONTACT D'ELECTRODE ENCAPSULE ET MUNI D'ESPACEURS E... von SELLE DANIEL, CARISETTI DOMINIQUE

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Process for manufacturing an integrated semiconductor device comprising the formation of a first contact electrode, encapsulated and provided with spacers, and a second contact ele... von CARISETTI, DOMINIQUE, SELLE, DANIEL

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